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The structure of the vertical multijunction detector is introduced, and the result and technologcial conditions of preparing junction by thermomigration method are presented. In addition, the insulation line method of processing electrode wire is specially introduced; the problem of photoetching electrode after thermomigration is solved; the effects of technologcial conditions on device performance are analyzed. Besides, the difficulty in connecting all P regions is solved, and the aim of zero shade for sensitive regions is achieved. Specially, in order to realize integrating multicell device, a method of widening the size of electrode wire is described. Several important parameters are described, and the math model for the relationship of the X-ray intensity with both photovoltage and photocurrent is set up. At the same time, we introduce the measurement relation between the output voltage of the device and X-ray intensity, which shows that the measurement data and theoretical results are consistent. Finally, we analyze the measurement data, and demonstrate that the device has good enough sensibility and resolution.
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Keywords:
- multijunction /
- integrated X-ray detector /
- performance and measuring
[1] Brambilla A, Buffet P O, Gonon G, Rinkel J, Moulin V, Boudou C, Verger L 2013 IEEE Trans. Nucl. Sci. 60 408
[2] Koenig T, Hamann E, Procz S, Ballabriga R, Cecilia A, Zuber M, Llopart X, Campbell M, Fauler A, Baumbach T, Fiederle M 2013 IEEE Trans. Nucl. Sci. 60 4713
[3] Rocha J G, Dias R A, Goncalves L, Minas G, Ferreira A, Costa C M, Mendez S L 2009 IEEE Sensors J. 9 1154
[4] Ryu S G, Tsuru T G, Nakashima S, Takeda A, Arai Y, Miyoshi T, Ichimiya R, Ikemoto Y, Matsumoto H, Imamura T, Ohmoto T, Iwata A 2011 IEEE Trans. Nucl. Sci. 58 2528
[5] Porro M, Andricek L, Aschauer S, et al. 2011 IEEE Trans. Nucl. Sci. 59 3339
[6] Kim H S, Han S W, Yang J H, et al. 2013 IEEE J. Solid-St. Circ. 48 541
[7] Mikerov V, Koshelev A, Ozerov O 2013 IEEE Trans. Nucl. Sci. 60 963
[8] Guo C, Xu R K, Lee Z H, Xia G X, Ning J M, Song F J 2004 Acta Phys. Sin. 53 1331 (in Chinese) [郭存, 徐荣昆, 李正宏, 夏广新, 宁家敏, 宋凤军 2004 53 1331]
[9] Andrii O S, Volodimir Y D 2012 Radiation Measurements 47 27 e29
[10] Zhao X L, Kang X, Chen L, Zhang Z B, Liu J L, Ouyang X P, Peng W B, He Y N 2014 Acta Phys. Sin. 63 098502 (in Chinese) [赵小龙, 康雪, 陈亮, 张忠兵, 刘金良, 欧阳晓平, 彭文博, 何永宁 2014 63 098502]
[11] Yu B, Chen B L, Hou L F, Su M, Huang T X, Liu S Y 2013 Acta Phys. Sin. 62 098502 (in Chinese) [余波, 陈伯伦, 侯立飞, 苏明, 黄天晅, 刘慎业 2013 62 098502]
[12] Akarin I, Joseph L K, Maxim S, Paul J S 2011 Org. Electron. 12 1903
[13] Miller N A, Neil G C O', Beall J A, Hilton G C, Irwin K D, Schmidt D R, Vale L R, Ullom J N 2008 Appl. Phys. Lett. 92 163501
[14] Aghamir F M, Behbahani R A 2014 Chin. Phys. B 23 065203
[15] Zhang Z G 2006 Chin. J. Semicond. 27 1294 (in Chinese) [张治国 2006 半导体学报 27 1294]
[16] Cline H E, Anthony T R 1976 J. Appl. Phys. 47 2325
[17] Cline H E, Anthony T R 1976 J. Appl. Phys. 47 2332
[18] Anthony T R, Cline H E 1976 J. Appl. Phys. 47 2550
[19] Zhang Z H, Wu Q L 1994 Semicond. Technol. 2 55 (in Chinese) [张治国, 吴巧兰 1994 半导体技术 2 55]
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[1] Brambilla A, Buffet P O, Gonon G, Rinkel J, Moulin V, Boudou C, Verger L 2013 IEEE Trans. Nucl. Sci. 60 408
[2] Koenig T, Hamann E, Procz S, Ballabriga R, Cecilia A, Zuber M, Llopart X, Campbell M, Fauler A, Baumbach T, Fiederle M 2013 IEEE Trans. Nucl. Sci. 60 4713
[3] Rocha J G, Dias R A, Goncalves L, Minas G, Ferreira A, Costa C M, Mendez S L 2009 IEEE Sensors J. 9 1154
[4] Ryu S G, Tsuru T G, Nakashima S, Takeda A, Arai Y, Miyoshi T, Ichimiya R, Ikemoto Y, Matsumoto H, Imamura T, Ohmoto T, Iwata A 2011 IEEE Trans. Nucl. Sci. 58 2528
[5] Porro M, Andricek L, Aschauer S, et al. 2011 IEEE Trans. Nucl. Sci. 59 3339
[6] Kim H S, Han S W, Yang J H, et al. 2013 IEEE J. Solid-St. Circ. 48 541
[7] Mikerov V, Koshelev A, Ozerov O 2013 IEEE Trans. Nucl. Sci. 60 963
[8] Guo C, Xu R K, Lee Z H, Xia G X, Ning J M, Song F J 2004 Acta Phys. Sin. 53 1331 (in Chinese) [郭存, 徐荣昆, 李正宏, 夏广新, 宁家敏, 宋凤军 2004 53 1331]
[9] Andrii O S, Volodimir Y D 2012 Radiation Measurements 47 27 e29
[10] Zhao X L, Kang X, Chen L, Zhang Z B, Liu J L, Ouyang X P, Peng W B, He Y N 2014 Acta Phys. Sin. 63 098502 (in Chinese) [赵小龙, 康雪, 陈亮, 张忠兵, 刘金良, 欧阳晓平, 彭文博, 何永宁 2014 63 098502]
[11] Yu B, Chen B L, Hou L F, Su M, Huang T X, Liu S Y 2013 Acta Phys. Sin. 62 098502 (in Chinese) [余波, 陈伯伦, 侯立飞, 苏明, 黄天晅, 刘慎业 2013 62 098502]
[12] Akarin I, Joseph L K, Maxim S, Paul J S 2011 Org. Electron. 12 1903
[13] Miller N A, Neil G C O', Beall J A, Hilton G C, Irwin K D, Schmidt D R, Vale L R, Ullom J N 2008 Appl. Phys. Lett. 92 163501
[14] Aghamir F M, Behbahani R A 2014 Chin. Phys. B 23 065203
[15] Zhang Z G 2006 Chin. J. Semicond. 27 1294 (in Chinese) [张治国 2006 半导体学报 27 1294]
[16] Cline H E, Anthony T R 1976 J. Appl. Phys. 47 2325
[17] Cline H E, Anthony T R 1976 J. Appl. Phys. 47 2332
[18] Anthony T R, Cline H E 1976 J. Appl. Phys. 47 2550
[19] Zhang Z H, Wu Q L 1994 Semicond. Technol. 2 55 (in Chinese) [张治国, 吴巧兰 1994 半导体技术 2 55]
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