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Considering Rashba spin orbit interaction and spin quantum transport in the spin field effect transistor, we study the influence of the barrier strength on the spin coherence transport in spin field effect transistors. It is found that when the barrier strength is weak, the tunneling junction conductance exhibits oscillatory phenomenon obviously with increasing Rashba spin orbit interaction strength. The conductance exhibites barrier-dependent conductive switching effect as the barrier strength increases. When the barrier strength gradually increases, parallel conductance exhibits a monotonicall decreasing trend, while the anti-parallel conductance fluctuates, and such a fluctuation leading to the tunneling magnetoresistance also exhibits oscillatory phenomenon with the variation of barrier strength . For a suitable thickness of quasi one-dimensional electron gas, the tunneling magnetoresistance value can produce positive and negative inversion, and the effect will shed light on the application of spin information storage electronic device.
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Keywords:
- spin field effect transistor /
- switching effect /
- coherence quantum tunneling /
- tunneling magnetoresistance
[1] Moodera J S, Kinder L R, Wong T M, Meservey R 1995 Phys. Rev. Lett. 74 3273
[2] Mathon J, Umerski A 1999 Phys. Rev. B 60 1117
[3] Zhu L, Chen W D, Xie Z W, Li B Z 2006 Acta Phys. Sin. 55 5499
[4] Mattana R, George J M, Jaffres H, Nguyen Van Dau F, Fert A, Lepine B, Guivare'h A, Jezequel G 2003 Phys. Rev. Lett. 90 166601
[5] Yang J, Wang J, Zheng Z M, Xing D Y, Chang C R 2005 Phys. Rev. B 71 214434
[6] Song C, Wang Y Y, Li X J, Wang G Y, Pan F 2012 Appl. Phys. Lett. 101 062404
[7] Datta S, Das B 1990 Appl. Phys. Lett. 56 665
[8] Liu Q H, Guo Y Z, Freeman A J 2013 Nano Letters 13 5264
[9] Wang R Q, Gong J, Wu J Y, Chen J 2013 Acta Phys. Sin. 62 087303 (in Chinese) [王瑞琴, 宫箭, 武建英, 陈军 2013 62 087303]
[10] Zhang L, Li H W, Hu L B 2012 Acta Phys. Sin. 61 177203 (in Chinese) [张磊, 李辉武, 胡梁斌 2012 61 177203]
[11] Li M, Zhang R, Liu B, Fu D Y, Zhao C Z, Xie Z L, Xiu X Q, Zheng Y D 2012 Acta Phys. Sin. 61 027103 (in Chinese) [李明, 张荣, 刘斌, 付德硕, 赵传阵, 谢自力, 修向前, 郑有炓 2012 61 027103]
[12] Wu M M, Jiang J H, Weng M Q 2010 Physics Reports 493 61
[13] Žutic I, Fabian J, Sarma S D 2004 Rev. Mod. Phys. 76 323
[14] Awschalom D, Flatte M E 2007 Nature Physics 3 153
[15] Hong X K, Yang X F, Feng J F, Liu Y S 2013 Chin. Phys. B 22 057306
[16] Xia J B, Ge W K, Chang K 2008 Semiconductor spintronics (Beijing: Science Press) (in Chinese) p216-248 [夏建白, 葛惟昆, 常凯 2008 半导体自旋电子学 (北京: 科学出版社) 第216–248页]
[17] Wang J W, Li S S, Xia J B 2006 Progress in Physics 26 228 (in Chinese) [王建伟, 李树深, 夏建白 2006 物理学进展 26 228]
[18] Hu C M, Matsuyama T 2001 Phys. Rev. Lett. 87 066803
[19] Matsuyama T, Hu C M, Grundler D, Meier G, Merkt U 2002 Phys. Rev. B 65 155322
[20] Li Y X, Guo Y, Li B Z 2005 Phys. Rev. B 71 012406
[21] Slonczewski J C 1989 Phys. Rev. B 39 6995
[22] Buttiker M 1993 J. Phys: Condens. Matte r 5 9361
[23] Christen T, Buttiker M 1996 Phys. Rev. Lett. 77 143
[24] Li Y X, Guo Y, Li B Z 2005 Phys. Rev. B 71 012406
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[1] Moodera J S, Kinder L R, Wong T M, Meservey R 1995 Phys. Rev. Lett. 74 3273
[2] Mathon J, Umerski A 1999 Phys. Rev. B 60 1117
[3] Zhu L, Chen W D, Xie Z W, Li B Z 2006 Acta Phys. Sin. 55 5499
[4] Mattana R, George J M, Jaffres H, Nguyen Van Dau F, Fert A, Lepine B, Guivare'h A, Jezequel G 2003 Phys. Rev. Lett. 90 166601
[5] Yang J, Wang J, Zheng Z M, Xing D Y, Chang C R 2005 Phys. Rev. B 71 214434
[6] Song C, Wang Y Y, Li X J, Wang G Y, Pan F 2012 Appl. Phys. Lett. 101 062404
[7] Datta S, Das B 1990 Appl. Phys. Lett. 56 665
[8] Liu Q H, Guo Y Z, Freeman A J 2013 Nano Letters 13 5264
[9] Wang R Q, Gong J, Wu J Y, Chen J 2013 Acta Phys. Sin. 62 087303 (in Chinese) [王瑞琴, 宫箭, 武建英, 陈军 2013 62 087303]
[10] Zhang L, Li H W, Hu L B 2012 Acta Phys. Sin. 61 177203 (in Chinese) [张磊, 李辉武, 胡梁斌 2012 61 177203]
[11] Li M, Zhang R, Liu B, Fu D Y, Zhao C Z, Xie Z L, Xiu X Q, Zheng Y D 2012 Acta Phys. Sin. 61 027103 (in Chinese) [李明, 张荣, 刘斌, 付德硕, 赵传阵, 谢自力, 修向前, 郑有炓 2012 61 027103]
[12] Wu M M, Jiang J H, Weng M Q 2010 Physics Reports 493 61
[13] Žutic I, Fabian J, Sarma S D 2004 Rev. Mod. Phys. 76 323
[14] Awschalom D, Flatte M E 2007 Nature Physics 3 153
[15] Hong X K, Yang X F, Feng J F, Liu Y S 2013 Chin. Phys. B 22 057306
[16] Xia J B, Ge W K, Chang K 2008 Semiconductor spintronics (Beijing: Science Press) (in Chinese) p216-248 [夏建白, 葛惟昆, 常凯 2008 半导体自旋电子学 (北京: 科学出版社) 第216–248页]
[17] Wang J W, Li S S, Xia J B 2006 Progress in Physics 26 228 (in Chinese) [王建伟, 李树深, 夏建白 2006 物理学进展 26 228]
[18] Hu C M, Matsuyama T 2001 Phys. Rev. Lett. 87 066803
[19] Matsuyama T, Hu C M, Grundler D, Meier G, Merkt U 2002 Phys. Rev. B 65 155322
[20] Li Y X, Guo Y, Li B Z 2005 Phys. Rev. B 71 012406
[21] Slonczewski J C 1989 Phys. Rev. B 39 6995
[22] Buttiker M 1993 J. Phys: Condens. Matte r 5 9361
[23] Christen T, Buttiker M 1996 Phys. Rev. Lett. 77 143
[24] Li Y X, Guo Y, Li B Z 2005 Phys. Rev. B 71 012406
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