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In this paper, InGaN/GaN multiple quantum-well blue light emitting diodes (LEDs) are successfully grown on Si(110) and Si(111) substrates. The micro-structural properties of the LEDs are characterized by means of high-resolution X-ray diffraction, atomic force microscopy, Raman spectra, and temperature dependent photoluminescence measurements. The results show that the sample on Si(110) substrate exhibits the high crystal quality, weak tensile strain, and large internal quantum efficiency. The optoelectronic properties of the LED devices are also investigated. The I-V curves indicate that the LED devices fabricated on Si(110) and Si(111) substrates have similar series resistances and low reverse leakage currents, but the LED devices fabricated on Si(110) substrate possess lower turn-on voltages. The relationship between light output intensity and injection current suggests that the LED device fabricated on Si(110) substrate has a strong light output efficiency. The study on the variation of spectral peak energy with injection current of the LED device reveals that LED device on Si(110) substrate presents a smaller spectral shift range when increasing the injection current. And the smaller spectral shift range reflects the weak quantum-confined Stark effect in the device, which can be attributed to the high crystal quality and weak strain between well layer and barrier film in the LED sample grown on Si(110).
[1] Crawford M H 2009 IEEE J. Sel. Topics Quantum Electron. 15 1028
[2] Chen W C, Tang H L, Luo P, Ma W W, Xu X D, Qian X B, Jiang D P, Wu F, Wang J Y, Xu J 2014 Acta Phys. Sin. 63 068103 (in Chinese) [陈伟超, 唐惠丽, 罗平, 麻尉蔚, 徐晓东, 钱小波, 姜大朋, 吴锋, 王静雅, 徐军 2014 63 068103]
[3] Fenwick W E, Andrew M, Xu T M, Li N, Summers C, Jamil M, Ferguson I T 2009 Appl. Phys. Lett. 94 222105
[4] Dadgar A, Poschenrieder M, Bläsing J, Fehse K, Diez A, Krost A 2002 Appl. Phys. Lett. 80 3670
[5] Kim M H, Do Y G, Kang H C, Noh D Y, Park S J 2001 Appl. Phys. Lett. 79 2713
[6] Cheng K, Leys M, Degroote S, Daele B, Boeykens S, Derluyn J, Germain M, Tendeloo G, Engelen J, Borghs G 2006 J. Electron. Mater. 35 592
[7] Hageman P R, Haffouz S, Kirilyuk V, Grzegorczyk A, Larsen P K 2001 Phys. Status Solidi A 188 523
[8] Li J, Lin J Y, Jiang H X 2006 Appl. Phys. Lett. 88 171909
[9] Liu M L, Min Q S, Ye Z Q 2012 Acta Phys. Sin. 61 178503 (in Chinese) [刘木林, 闵秋实, 叶志清 2012 61 178503]
[10] Xiong C B, Jiang F Y, Fang W Q, Wang L, Mo C N, Liu H C 2007 J. Lumin. 122–123 185
[11] Shen X Q, Takahashi T, Kawashima H, Ide T, Shimizu M, Okumura H 2013 Jpn. J. Appl. Phys. 52 08JB05
[12] Dadgar A, Schulze F, Wienecke M, Gadanecz A, Bläsing J, Veit P, Hempel T, Diez A, Christen J, Krost A 2007 New J. Phys. 9 389
[13] Damilano B, Natali F, Brault J, Huault T, Lefebvre D, Tauk R, Frayssinet E, Moreno J C, Cordier Y, Semond F, Chenot S, Massies J 2008 Appl. Phys. Express 1 121101
[14] Xie Z L, Zhang R, Fu D Y, Liu B, Xiu X Q, Hua X M, Zhao H, Chen P, Han P, Shi Y, Zheng Y D 2011 Chin. Phys. B 20 116801
[15] Yang W, He Y F, Liu L, Hu X D 2013 Appl. Phys. Lett. 102 241111
[16] Yin H X, Zhu C R, Shen Y, Yang H F, Liu Z, Gu C Z, Liu B L, Xu X G 2014 Appl. Phys. Lett. 104 061113
[17] Zhong C T, Yu T J, Yan J, Chen Z Z, Zhang G Y 2013 Chin. Phys. B 22 117804
[18] Chen Z X, Ren Y, Xiao G H, Li J T, Chen X, Wang X H, Jin C J, Zhang B J 2014 Chin. Phys. B 23 018502
[19] Li S Q, Wang L, Han Y J, Luo Y, Deng H Q, Qiu J S, Zhang J 2011 Acta Phys. Sin. 60 098107 (in Chinese) [李水清, 汪莱, 韩彦军, 罗毅, 邓和清, 丘建生, 张洁 2011 60 098107]
[20] Vickers M E, Kappers M J, Smeeton T M, Thrush E J, Barnard J S, Humphreys C J 2003 J. Appl. Phys. 94 1565
[21] Davydov V Y, Kitaev Y E, Goncharuk I N, Smirnov A N, Graul J, Semchinova O, Uffmann D, Smirnov M B, Mirgorodsky A P, Evarestov R A 1998 Phys. Rev. B 58 12899
[22] Watanabe A, Takeuchi T, Hirosawa K, Amano H, Hiramatsu K, Akasaki I 1993 J. Cryst. Growth 128 391
[23] Takeuchi T, Sota S, Sakai H, Amanoa H, Akasaki I, Kaneko K, Nakagawa S, Yamaoka Y, Yamada N 1998 J. Cryst. Growth 189-190 616
[24] Zhuang R R, Cai P 2013 J. Zhangzhou Normal Univ.(Nat. Sci.) 3 66(in Chinese) [庄榕榕, 蔡平 2013 漳州师范学院学报(自然科学版) 3 66]
[25] Kalliakos S, Lefebvre P, Taliercio T 2003 Phys. Rev. B 67 205307
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[1] Crawford M H 2009 IEEE J. Sel. Topics Quantum Electron. 15 1028
[2] Chen W C, Tang H L, Luo P, Ma W W, Xu X D, Qian X B, Jiang D P, Wu F, Wang J Y, Xu J 2014 Acta Phys. Sin. 63 068103 (in Chinese) [陈伟超, 唐惠丽, 罗平, 麻尉蔚, 徐晓东, 钱小波, 姜大朋, 吴锋, 王静雅, 徐军 2014 63 068103]
[3] Fenwick W E, Andrew M, Xu T M, Li N, Summers C, Jamil M, Ferguson I T 2009 Appl. Phys. Lett. 94 222105
[4] Dadgar A, Poschenrieder M, Bläsing J, Fehse K, Diez A, Krost A 2002 Appl. Phys. Lett. 80 3670
[5] Kim M H, Do Y G, Kang H C, Noh D Y, Park S J 2001 Appl. Phys. Lett. 79 2713
[6] Cheng K, Leys M, Degroote S, Daele B, Boeykens S, Derluyn J, Germain M, Tendeloo G, Engelen J, Borghs G 2006 J. Electron. Mater. 35 592
[7] Hageman P R, Haffouz S, Kirilyuk V, Grzegorczyk A, Larsen P K 2001 Phys. Status Solidi A 188 523
[8] Li J, Lin J Y, Jiang H X 2006 Appl. Phys. Lett. 88 171909
[9] Liu M L, Min Q S, Ye Z Q 2012 Acta Phys. Sin. 61 178503 (in Chinese) [刘木林, 闵秋实, 叶志清 2012 61 178503]
[10] Xiong C B, Jiang F Y, Fang W Q, Wang L, Mo C N, Liu H C 2007 J. Lumin. 122–123 185
[11] Shen X Q, Takahashi T, Kawashima H, Ide T, Shimizu M, Okumura H 2013 Jpn. J. Appl. Phys. 52 08JB05
[12] Dadgar A, Schulze F, Wienecke M, Gadanecz A, Bläsing J, Veit P, Hempel T, Diez A, Christen J, Krost A 2007 New J. Phys. 9 389
[13] Damilano B, Natali F, Brault J, Huault T, Lefebvre D, Tauk R, Frayssinet E, Moreno J C, Cordier Y, Semond F, Chenot S, Massies J 2008 Appl. Phys. Express 1 121101
[14] Xie Z L, Zhang R, Fu D Y, Liu B, Xiu X Q, Hua X M, Zhao H, Chen P, Han P, Shi Y, Zheng Y D 2011 Chin. Phys. B 20 116801
[15] Yang W, He Y F, Liu L, Hu X D 2013 Appl. Phys. Lett. 102 241111
[16] Yin H X, Zhu C R, Shen Y, Yang H F, Liu Z, Gu C Z, Liu B L, Xu X G 2014 Appl. Phys. Lett. 104 061113
[17] Zhong C T, Yu T J, Yan J, Chen Z Z, Zhang G Y 2013 Chin. Phys. B 22 117804
[18] Chen Z X, Ren Y, Xiao G H, Li J T, Chen X, Wang X H, Jin C J, Zhang B J 2014 Chin. Phys. B 23 018502
[19] Li S Q, Wang L, Han Y J, Luo Y, Deng H Q, Qiu J S, Zhang J 2011 Acta Phys. Sin. 60 098107 (in Chinese) [李水清, 汪莱, 韩彦军, 罗毅, 邓和清, 丘建生, 张洁 2011 60 098107]
[20] Vickers M E, Kappers M J, Smeeton T M, Thrush E J, Barnard J S, Humphreys C J 2003 J. Appl. Phys. 94 1565
[21] Davydov V Y, Kitaev Y E, Goncharuk I N, Smirnov A N, Graul J, Semchinova O, Uffmann D, Smirnov M B, Mirgorodsky A P, Evarestov R A 1998 Phys. Rev. B 58 12899
[22] Watanabe A, Takeuchi T, Hirosawa K, Amano H, Hiramatsu K, Akasaki I 1993 J. Cryst. Growth 128 391
[23] Takeuchi T, Sota S, Sakai H, Amanoa H, Akasaki I, Kaneko K, Nakagawa S, Yamaoka Y, Yamada N 1998 J. Cryst. Growth 189-190 616
[24] Zhuang R R, Cai P 2013 J. Zhangzhou Normal Univ.(Nat. Sci.) 3 66(in Chinese) [庄榕榕, 蔡平 2013 漳州师范学院学报(自然科学版) 3 66]
[25] Kalliakos S, Lefebvre P, Taliercio T 2003 Phys. Rev. B 67 205307
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