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Shi Qiang, Li Lu-Ping, Zhang Yong-Hui, Zhang Zi-Hui, Bi Wen-Gang. Identifying the influence of GaN/InxGa1-xN type last quantum barrier on internal quantum efficiency for III-nitride based light-emitting diode. Acta Physica Sinica,
2017, 66(15): 158501.
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Liu Zhan-Hui, Zhang Li-Li, Li Qing-Fang, Zhang Rong, Xiu Xiang-Qian, Xie Zi-Li, Shan Yun. InGaN/GaN blue light emitting diodes grown on Si(110) and Si(111) substrates. Acta Physica Sinica,
2014, 63(20): 207304.
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2013, 62(18): 180704.
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2013, 62(7): 076108.
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Ji Chao, Zhang Ling-Yun, Dou Shuo-Xing, Wang Peng-Ye. A new method to deal with biomacromolecularimage observed by atomic force microscopy. Acta Physica Sinica,
2011, 60(9): 098703.
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2010, 59(2): 1233-1236.
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2009, 58(4): 2644-2648.
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2009, 58(1): 590-595.
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Fan Kang-Qi, Jia Jian-Yuan, Zhu Ying-Min, Liu Xiao-Yuan. Dynamic model of atomic force microscopy in tapping-mode. Acta Physica Sinica,
2007, 56(11): 6345-6351.
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2007, 56(5): 2873-2877.
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Hu Hai-Long, Zhang Kun, Wang Zhen-Xing, Wang Xiao-Ping. Study of the transport properties of self-assembled alkanethiol monolayer by conduction atomic force microscopy. Acta Physica Sinica,
2006, 55(3): 1430-1434.
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Ou Gu-Ping, Song Zhen, Gui Wen-Ming, Zhang Fu-Jia. Surface analysis of LiBq4/ITO and LiBq4/CuPc/ITO using atomic force microscopy and x-ray photoelectron spectroscopy. Acta Physica Sinica,
2005, 54(12): 5717-5722.
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Xu Geng-Zhao, Liang Hu, Bai Yong-Qiang, Lau Kei-May, Zhu Xing. Study of temperature dependent electroluminescence of InGaN/GaN multiple quantum wells using low temperature scanning near-field optical microscopy. Acta Physica Sinica,
2005, 54(11): 5344-5349.
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Xu Bo, Yu Qing-Xuan, Wu Qi-Hong, Liao Yuan, Wang Guan-Zhong, Fang Rong-Chuan. Effects of strain and Mg-dopant on the photoluminescencespectra in p-type GaN. Acta Physica Sinica,
2004, 53(1): 204-209.
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Zhang Xiang-Jun, Meng Yong-Gang, Wen Shi-Zhu. On micro scanning forces under the coupling deformation of atomic force microscope probe. Acta Physica Sinica,
2004, 53(3): 728-733.
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Zhang Ji-Cai, Wang Jian-Feng, Wang Yu-Tian, Yang Hui. Effect of the ratio of TMIn flow to group Ⅲ flow on the properties of InGaN/GaN multiple quantum wells. Acta Physica Sinica,
2004, 53(8): 2467-2471.
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2003, 52(10): 2558-2562.
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2002, 51(6): 1203-1207.
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