Study on electrical transport properties of strained Si nanowires by in situ transmission electron microscope

Wang Jiang-Jing; Shao Rui-Wen; Deng Qing-Song; Zheng Kun

doi:10.7498/aps.63.117303

Abstract

Strain engineering in semiconductor nanostructure has been received great attention because their ultra-large elastic limit can induce a broad tuning range of the physical properties. Here, we report how the electrical transport properties of the p-type -oriented Si nanowires may be tuned by bending strain and affected by the plastic deformation in a transmission electron microscope. These freestanding nanowires were prepared from commercial silicon-on-insulator materials using the focusing ion beam technique. Results show that the conductivity of these Si nanowires is improved remarkably by bending strain when the strain is lower than 2%, while the improvement is nearly saturated when the strain approaches to 2%. The electric current will reduce a little sometimes when strain exceeds 3%, which may result from plastic events. Our experimental results may be helpful to Si strain engineering.

Keywords:

Authors and contacts

1.
Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China
Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11004004, 11374029, 11234011), the Foundation for the Author of National Excellent Doctoral Dissertation of China (Grant No. 201214), and the Beijing Nova Program, China (Grant No. Z121103002512017).

References

[1]	Zhao J, Zhang G Y, Shi D X 2013 Chin. Phys. B 22 057701
[2]	Liu Z Y, Zhang J C, Duan H T, Xue J S, Lin Z Y, Ma J C, Xue X Y, Hao Y 2011 Chin. Phys. B 20 097701
[3]	Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Acta Phys. Sin. 61 057304 (in Chinese)[宋建军, 张鹤鸣, 胡辉勇, 王晓艳, 王冠宇 2012 61 057304]
[4]	Rima K, Andersonb R, Boydb D, Cardonea F, Chana K, Chenb H, Christansena S, Chua J, Jenkinsa K, Kanarskyb T, Koestera S, Leeb B H, Leea K, Mazzeob V, Mocutab A, Mocutab D, Mooneya P M, Oldigesb P, Otta J, Ronsheimb P, Roya R, Steegenb A, Yanga M, Zhub H, Ieongb M, Wonga H S P 2003 Solid-State Electronics 47 1133
[5]	Wang D, Ninomiya Masaharu, Nakamae Masahiko, Nakashima Hiroshi 2005 Appl. Phys. Lett. 86 122111
[6]	Nayak D K, Woo J C S, Park J S, Wang K L, MacWilliams, K P 1993 Appl. Phys. Lett. 62 2853
[7]	Stan G, Krylyuk S, Davydov A V, Levin I, Cook R F 2012 Nano Lett. 12 2599
[8]	Smith D A, Holmberg V C, Korgel B A 2010 ACS Nano 4 2356
[9]	Wei B, Zheng K, Ji Y, Zhang Y F, Zhang Z, Han X D 2012 Nano Lett. 12 4595
[10]	Pang C Y, Lee G Y, Kim T, Kim S M, Kim H N, Ahn S H, Suh K Y 2012 Nat. Mater. 11 795
[11]	Bai X D, Golberg D Y, Bando C, Zhi Y, Tang C C, Mitome M, Kurashima K 2007 Nano Lett. 7 632
[12]	Wang Z L, Song J H 2006 Science 312 242
[13]	Han X B, Kou L Z, Lang X L, Xia J B, Wang N, Qin R, Lu J, Xu J, Liao Z M, Zhang X Z, Shan X D, Song X F, Gao J Y, Guo W L, Yu D P 2009 Adv. Mater. 21 4937
[14]	Han X B, Kou L Z, Zhang Z Y, Zhu X L, Xu J, Liao Z M, Guo W L, Yu D P 2012 Adv. Mater. 24 4707
[15]	Xu S G, Guo W H, Du S W, Loy M M T, Wang N 2012 Nano Lett. 12 5802
[16]	Signorello G, Karg S, Björk M T 2013 Nano Lett. 13 917
[17]	Shao R W, Zheng K, Zhang Y F, Li Y J, Zhang Z, Han X D 2012 Appl. Phys. Lett. 101 233109
[18]	Wang J, Rahman A, Ghosh A, Klimeck, Lundstrom G M 2005 Appl. Phys. Lett. 86 093113
[19]	Hong K, Kim J, Lee S, Shin J K 2008 Nano Lett. 8 1335
[20]	Shiri K, Kong Y, Buin A, Anantram M P 2008 Appl. Phys. Lett. 93 073114
[21]	Sajjad R N, Alam K 2009 J. Appl. Phys. 105 044307
[22]	Jin Z, Qiao L P, Guo C, Wang J A, Liu C 2013 Acta Phys. Sin. 62 058501 (in Chinese)[靳钊, 乔丽萍, 郭晨, 王江安, 刘策 2013 62 058501]
[23]	Zhang J H, Huang Q A, Yu H, Lei S Y 2009 Sensors 9 2746
[24]	Cao J X, Gong X G, Wu R Q 2007 Phys. Rev. B 75 233302
[25]	Leu P W, Svizhenko A, Cho K 2008 Phys. Rev. B 77 235305
[26]	Zhao L X, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Acta Phys. Sin. 59 6545 (in Chinese)[赵丽霞, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜 2010 59 6545]
[27]	Niquet Y M, Delerue C, Krzeminski C 2012 Nano Lett. 12 3545
[28]	Fishchetti M V, Laux S E 1996 J. Appl. Phys. 80 2234
[29]	Feste S F, Knoch J, Habicht S, Buca D, Zhao Q T, Mantl S 2009 Solid-state Electronics 53 1257
[30]	Toriyama T, Funai D, Sugiyama S 2003 J. Appl. Phys. 93 561
[31]	Yang Y L, Li X X 2011 Nanotech. 22 015501
[32]	Neuzil P, Wong C C, Rebound J 2010 Nano Lett. 10 1248
[33]	Lugstein A, Steinmair M, Steiger A, Kosina H, Bertagnolli E 2010 Nano Lett. 10 3204
[34]	He R H, Yang P D 2006 Nat. Nanotech. 1 42
[35]	Milne J S, Rowe A C H, Arscott S, Renner C 2010 Phys. Rev. Lett. 105 226802
[36]	Qin Y, Zhang X N, Zheng K, Li H, Han X D, Zhang Z 2008 Appl. Phys. Lett. 93 063104
[37]	Zheng K, Shao R W, Deng Q S, Zhang Y F, Li Y J, Han X D, Zhang Z, Zou J 2014 Appl. Phys. Lett. 104 013111
[38]	Svensson K, Jompol Y, Olin H, Olsson E 2003 Rev. Sci. Instrum. 74 4945
[39]	Shao R W, Zheng K, Wei B, Zhang Y F, Li Y J, Han X D, Zhang Z, Zou J 2014 Nanoscale 4 4936
[40]	Han X D, Zhang Y F, Zheng K, Zhang X N, Zhang Z, Hao Y J, Guo X Y, Yuan J, Wang Z L 2007 Nano Lett. 7 452
[41]	Han X D, Zheng K, Zhang Y F, Zhang X N, Zhang Z, Wang Z L 2007 Adv. Mater. 19 2112
[42]	Zheng K, Han X D, Wang L H, Zhang Y F, Yue Y H, Qin Y, Zhang X N, Zhang Z 2009 Nano Lett. 9 2471
[43]	Wang L H, Zheng K, Zhang Z, Han X D 2011 Nano Lett. 11 2382

Cited By

[1]	Zhao J, Zhang G Y, Shi D X 2013 Chin. Phys. B 22 057701
[2]	Liu Z Y, Zhang J C, Duan H T, Xue J S, Lin Z Y, Ma J C, Xue X Y, Hao Y 2011 Chin. Phys. B 20 097701
[3]	Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Acta Phys. Sin. 61 057304 (in Chinese)[宋建军, 张鹤鸣, 胡辉勇, 王晓艳, 王冠宇 2012 61 057304]
[4]	Rima K, Andersonb R, Boydb D, Cardonea F, Chana K, Chenb H, Christansena S, Chua J, Jenkinsa K, Kanarskyb T, Koestera S, Leeb B H, Leea K, Mazzeob V, Mocutab A, Mocutab D, Mooneya P M, Oldigesb P, Otta J, Ronsheimb P, Roya R, Steegenb A, Yanga M, Zhub H, Ieongb M, Wonga H S P 2003 Solid-State Electronics 47 1133
[5]	Wang D, Ninomiya Masaharu, Nakamae Masahiko, Nakashima Hiroshi 2005 Appl. Phys. Lett. 86 122111
[6]	Nayak D K, Woo J C S, Park J S, Wang K L, MacWilliams, K P 1993 Appl. Phys. Lett. 62 2853
[7]	Stan G, Krylyuk S, Davydov A V, Levin I, Cook R F 2012 Nano Lett. 12 2599
[8]	Smith D A, Holmberg V C, Korgel B A 2010 ACS Nano 4 2356
[9]	Wei B, Zheng K, Ji Y, Zhang Y F, Zhang Z, Han X D 2012 Nano Lett. 12 4595
[10]	Pang C Y, Lee G Y, Kim T, Kim S M, Kim H N, Ahn S H, Suh K Y 2012 Nat. Mater. 11 795
[11]	Bai X D, Golberg D Y, Bando C, Zhi Y, Tang C C, Mitome M, Kurashima K 2007 Nano Lett. 7 632
[12]	Wang Z L, Song J H 2006 Science 312 242
[13]	Han X B, Kou L Z, Lang X L, Xia J B, Wang N, Qin R, Lu J, Xu J, Liao Z M, Zhang X Z, Shan X D, Song X F, Gao J Y, Guo W L, Yu D P 2009 Adv. Mater. 21 4937
[14]	Han X B, Kou L Z, Zhang Z Y, Zhu X L, Xu J, Liao Z M, Guo W L, Yu D P 2012 Adv. Mater. 24 4707
[15]	Xu S G, Guo W H, Du S W, Loy M M T, Wang N 2012 Nano Lett. 12 5802
[16]	Signorello G, Karg S, Björk M T 2013 Nano Lett. 13 917
[17]	Shao R W, Zheng K, Zhang Y F, Li Y J, Zhang Z, Han X D 2012 Appl. Phys. Lett. 101 233109
[18]	Wang J, Rahman A, Ghosh A, Klimeck, Lundstrom G M 2005 Appl. Phys. Lett. 86 093113
[19]	Hong K, Kim J, Lee S, Shin J K 2008 Nano Lett. 8 1335
[20]	Shiri K, Kong Y, Buin A, Anantram M P 2008 Appl. Phys. Lett. 93 073114
[21]	Sajjad R N, Alam K 2009 J. Appl. Phys. 105 044307
[22]	Jin Z, Qiao L P, Guo C, Wang J A, Liu C 2013 Acta Phys. Sin. 62 058501 (in Chinese)[靳钊, 乔丽萍, 郭晨, 王江安, 刘策 2013 62 058501]
[23]	Zhang J H, Huang Q A, Yu H, Lei S Y 2009 Sensors 9 2746
[24]	Cao J X, Gong X G, Wu R Q 2007 Phys. Rev. B 75 233302
[25]	Leu P W, Svizhenko A, Cho K 2008 Phys. Rev. B 77 235305
[26]	Zhao L X, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Acta Phys. Sin. 59 6545 (in Chinese)[赵丽霞, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜 2010 59 6545]
[27]	Niquet Y M, Delerue C, Krzeminski C 2012 Nano Lett. 12 3545
[28]	Fishchetti M V, Laux S E 1996 J. Appl. Phys. 80 2234
[29]	Feste S F, Knoch J, Habicht S, Buca D, Zhao Q T, Mantl S 2009 Solid-state Electronics 53 1257
[30]	Toriyama T, Funai D, Sugiyama S 2003 J. Appl. Phys. 93 561
[31]	Yang Y L, Li X X 2011 Nanotech. 22 015501
[32]	Neuzil P, Wong C C, Rebound J 2010 Nano Lett. 10 1248
[33]	Lugstein A, Steinmair M, Steiger A, Kosina H, Bertagnolli E 2010 Nano Lett. 10 3204
[34]	He R H, Yang P D 2006 Nat. Nanotech. 1 42
[35]	Milne J S, Rowe A C H, Arscott S, Renner C 2010 Phys. Rev. Lett. 105 226802
[36]	Qin Y, Zhang X N, Zheng K, Li H, Han X D, Zhang Z 2008 Appl. Phys. Lett. 93 063104
[37]	Zheng K, Shao R W, Deng Q S, Zhang Y F, Li Y J, Han X D, Zhang Z, Zou J 2014 Appl. Phys. Lett. 104 013111
[38]	Svensson K, Jompol Y, Olin H, Olsson E 2003 Rev. Sci. Instrum. 74 4945
[39]	Shao R W, Zheng K, Wei B, Zhang Y F, Li Y J, Han X D, Zhang Z, Zou J 2014 Nanoscale 4 4936
[40]	Han X D, Zhang Y F, Zheng K, Zhang X N, Zhang Z, Hao Y J, Guo X Y, Yuan J, Wang Z L 2007 Nano Lett. 7 452
[41]	Han X D, Zheng K, Zhang Y F, Zhang X N, Zhang Z, Wang Z L 2007 Adv. Mater. 19 2112
[42]	Zheng K, Han X D, Wang L H, Zhang Y F, Yue Y H, Qin Y, Zhang X N, Zhang Z 2009 Nano Lett. 9 2471
[43]	Wang L H, Zheng K, Zhang Z, Han X D 2011 Nano Lett. 11 2382

[1]	Nie Xiao-Lei, Yu Hao-Cheng, Zhu Wan-Ting, Sang Xia-Han, Wei Ping, Zhao Wen-Yu. Design, fabrication and performance evaluation of graphene/Bi_0.5Sb_1.5Te₃ flexible thermoelectric films and in-plane heat dissipation devices. Acta Physica Sinica, 2022, 71(15): 157301. doi: 10.7498/aps.71.20220358
[2]	Wang Wei, Liu Wei, Xie Sen, Ge Hao-Ran, Ouyang Yu-Jie, Zhang Cheng, Hua Fu-Qiang, Zhang Min, Tang Xin-Feng. epitaxial growth, intrinsic point defects and electronic transport optimization of MnTe films. Acta Physica Sinica, 2022, 71(13): 137102. doi: 10.7498/aps.71.20212350
[3]	Bai Gang, Han Yu-Hang, Gao Cun-Fa. Phase transitions and electrocaloric effects of (111)-oriented K_0.5Na_0.5NbO₃ epitaxial films: effect of external stress and misfit strains. Acta Physica Sinica, 2022, 71(9): 097701. doi: 10.7498/aps.71.20220234
[4]	Wang Na, Xu Hui-Fang, Yang Qiu-Yun, Zhang Mao-Lian, Lin Zi-Jing. First-principles study of strain-tunable charge carrier transport properties and optical properties of CrI₃ monolayer. Acta Physica Sinica, 2022, 71(20): 207102. doi: 10.7498/aps.71.20221019
[5]	Chen Dan, Shi Dan-Dan, Pan Gui-Jun. Correlation between the electrical transport performance and the communicability sequence entropy in complex networks. Acta Physica Sinica, 2019, 68(11): 118901. doi: 10.7498/aps.68.20190230
[6]	Xuan Sheng-Jie, Liu Yan. Control of skyrmion movement in nanotrack by using periodic strain. Acta Physica Sinica, 2018, 67(13): 137503. doi: 10.7498/aps.67.20180031
[7]	Song Jian-Jun, Bao Wen-Tao, Zhang Jing, Tang Zhao-Huan, Tan Kai-Zhou, Cui Wei, Hu Hui-Yong, Zhang He-Ming. Double ellipsoid model for conductivity effective mass along [110] orientation in (100) Si-based strained p-channel metal-oxide-semiconductor. Acta Physica Sinica, 2016, 65(1): 018501. doi: 10.7498/aps.65.018501
[8]	Sun Zhi-Gang, Pang Yu-Yu, Hu Jing-Hua, He Xiong, Li Yue-Chou. Electronic transportation properties and magnetoresistance effects on single TiO2 nanowire under ultraviolet irradiation. Acta Physica Sinica, 2016, 65(9): 097301. doi: 10.7498/aps.65.097301
[9]	Fan Zhi-Dong, Zhou Zi-Chun, Liu Chuo, Ma Lei, Peng Ying-Cai. Photoluminescence properties of Eu doped Si nanowires. Acta Physica Sinica, 2015, 64(14): 148103. doi: 10.7498/aps.64.148103
[10]	Zhu Yan, Zhang Xin-Yu, Zhang Su-Hong, Ma Ming-Zhen, Liu Ri-Ping, Tian Hong-Yan. Electron transport properties of Mg2Si under hydrostatic pressures. Acta Physica Sinica, 2015, 64(7): 077103. doi: 10.7498/aps.64.077103
[11]	Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin. Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex. Acta Physica Sinica, 2015, 64(3): 038501. doi: 10.7498/aps.64.038501
[12]	Wang Yu-Zhen, Ma Ying, Zhou Yi-Chun. Molecular dynamics study of epitaxial compressive strain influence on the radiation resistance of BaTiO3 ferroelectrics. Acta Physica Sinica, 2014, 63(24): 246101. doi: 10.7498/aps.63.246101
[13]	Huang Shi-Hao, Li Cheng, Chen Cheng-Zhao, Zheng Yuan-Yu, Lai Hong-Kai, Chen Song-Yan. The optical property of tensile-strained n-type doped Ge. Acta Physica Sinica, 2012, 61(3): 036202. doi: 10.7498/aps.61.036202
[14]	Gu Fang, Zhang Jia-Hong, Yang Li-Juan, Gu Bin. Molecular dynamics simulation of resonance properties of strain graphene nanoribbons. Acta Physica Sinica, 2011, 60(5): 056103. doi: 10.7498/aps.60.056103
[15]	Peng Ying-Cai, Fan Zhi-Dong, Bai Zhen-Hua, Ma Lei. Controlled growth of silicon nanowires by solid-liquid-solid method and their formation mechanism. Acta Physica Sinica, 2010, 59(2): 1169-1174. doi: 10.7498/aps.59.1169
[16]	Zhang Fei-Peng, Lu Qing-Mei, Zhang Jiu-Xing, Zhang Xin. Texture and electrical transport properties of Ba and Ag double substituted BaxAgyCa3-x-yCo4O9 oxide. Acta Physica Sinica, 2009, 58(4): 2697-2701. doi: 10.7498/aps.58.2697
[17]	Yao Fei, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. Band gap Narrowing in heavily B doped Si1－xGex strained layers. Acta Physica Sinica, 2007, 56(11): 6654-6659. doi: 10.7498/aps.56.6654
[18]	Zhang Hong-Di, An Yu-Kai, Mai Zhen-Hong, Gao Ju, Hu Feng-Xia, Wang Yong, Jia Quan-Jie. Thickness effect on structure and magnetic properties of La0.8Ca0.2MnO3/SrTiO3 films. Acta Physica Sinica, 2007, 56(9): 5347-5352. doi: 10.7498/aps.56.5347
[19]	Wang Huan-You, Cao Xiao-Ping, Jiang Yi-Min, Liu Mario. Strain and elasticity of static granular matter. Acta Physica Sinica, 2005, 54(6): 2784-2790. doi: 10.7498/aps.54.2784
[20]	Cheng Bu-Wen, Yao Fei, Xue Chun-Lai, Zhang Jian-Guo, Li Chuan-Bo, Mao Rong-Wei, Zuo Yu-Hua, Luo Li-Ping, Wang Qi-Ming. A method to estimate the strain state of SiGe/Si by measuring the bandgap. Acta Physica Sinica, 2005, 54(9): 4350-4353. doi: 10.7498/aps.54.4350

Catalog

Vol. 63, Issue 11 - 2014-06-05

Metrics

Abstract views: 6825
PDF Downloads: 847
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板