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In this paper, gem diamond synthesis is systematically studied using the multiseed method in China-type cubic high-pressure apparatus. High-quality Ib diamond crystals are synthesized in a growth cell with 3-5 diamond seeds, by adjusting the growth cell assembly and investigating the pressure and temperature regions of diamond synthesis. Because of several diamond seeds embedded in a growth cell, the synthesized diamond crystals possess the same morphology and quality. At the same time, the whole growth rate increases apparently. Using the multiseed method of diamond synthesis the growth cell volume can be effectively utilized, the efficiency of diamond synthesis can be enhanced, and the problem of low utilization rate is solved. Meanwhile, those also provide an effective support for the gem diamond industrialization synthesis.
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Keywords:
- diamond /
- China-type cubic high-pressure apparatus /
- multiseed /
- temperature gradient method
[1] Bundy F P, Strong H T, Wentorf R H 1955 Nature 176 51
[2] Strong H M, Hanneman R E 1967 J. Chem. Phys. 46 3668
[3] Burns R C, Hansen J O, Spits R A, Sibanda M, Melbourn C M, Welch D L 1999 Diamond Relat. Mater. 8 1433
[4] Li Z C, Jia X P, Huang G F, Hu M H, Li Y, Yan B M, Ma H A 2013 Chin. Phys. B 22 014701
[5] Tian Y, Jia X P, Zang C Y, Li R, Li S S, Xiao H Y, Zhang Y F, Huang G F, Han Q G, Ma L Q, Li Y, Chen X Z, Zhang C, Ma H A 2009 Chin. Phys. Lett. 26 028104
[6] Demina S E, Kalaev V V, Lysakovskyi V V, Serga M A, Kovalenko T V, Ivahnenko S A 2009 J. Cryst. Growth 311 680
[7] Hu M H, Li S S, Ma H A, Su T C, Li X L, Hu Q, Jia X P 2012 Chin. Phys. B 21 098101
[8] Li Y, Jia X P, Hu M H, Liu X B, Yan B M, Zhou Z X, Zhang Z F, Ma H A 2012 Chin. Phys. B 21 058101
[9] Sumiya H, Harano K 2012 Diamond Relat. Mater. 24 44
[10] Palyanov Y N, Borzdov Y M, Kupriyanov I N, Khokhryakov A F 2012 Cryst. Growth Des. 12 5571
[11] Lin I C, Lin C J, Tuan W H 2011 Diamond Relat. Mater. 20 42
[12] Jia X P, Zhu P W, Wang T D, Zang C Y, Wang X C, Chen L X, Zou G T, Wakastuski W 2003 4th Zhengzhou International Superhard Materials and Related Products Conference Zhengzhou, China, August 29-September 2, 2003 p77
[13] Sung J C, Sung M, Sung E 2006 Thin Solid Films 498 212
[14] Han Q G, Ma H A, Zhou L, Zhang C, Tian Y, Jia X P 2007 Rev. Sci. Instrum. 78 113906
[15] Han Q G, Ma H A, Huang G F, Zhang C, Li Z C, Jia X P 2009 Rev. Sci. Instrum. 80 096107
[16] Ma H A, Jia X P, Chen L X, Zhu P W, Guo W L, Guo X B, Wang Y D, Li S Q, Zou G T, Bex P 2002 J. Phys.: Condens. Matter. 14 11269
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[1] Bundy F P, Strong H T, Wentorf R H 1955 Nature 176 51
[2] Strong H M, Hanneman R E 1967 J. Chem. Phys. 46 3668
[3] Burns R C, Hansen J O, Spits R A, Sibanda M, Melbourn C M, Welch D L 1999 Diamond Relat. Mater. 8 1433
[4] Li Z C, Jia X P, Huang G F, Hu M H, Li Y, Yan B M, Ma H A 2013 Chin. Phys. B 22 014701
[5] Tian Y, Jia X P, Zang C Y, Li R, Li S S, Xiao H Y, Zhang Y F, Huang G F, Han Q G, Ma L Q, Li Y, Chen X Z, Zhang C, Ma H A 2009 Chin. Phys. Lett. 26 028104
[6] Demina S E, Kalaev V V, Lysakovskyi V V, Serga M A, Kovalenko T V, Ivahnenko S A 2009 J. Cryst. Growth 311 680
[7] Hu M H, Li S S, Ma H A, Su T C, Li X L, Hu Q, Jia X P 2012 Chin. Phys. B 21 098101
[8] Li Y, Jia X P, Hu M H, Liu X B, Yan B M, Zhou Z X, Zhang Z F, Ma H A 2012 Chin. Phys. B 21 058101
[9] Sumiya H, Harano K 2012 Diamond Relat. Mater. 24 44
[10] Palyanov Y N, Borzdov Y M, Kupriyanov I N, Khokhryakov A F 2012 Cryst. Growth Des. 12 5571
[11] Lin I C, Lin C J, Tuan W H 2011 Diamond Relat. Mater. 20 42
[12] Jia X P, Zhu P W, Wang T D, Zang C Y, Wang X C, Chen L X, Zou G T, Wakastuski W 2003 4th Zhengzhou International Superhard Materials and Related Products Conference Zhengzhou, China, August 29-September 2, 2003 p77
[13] Sung J C, Sung M, Sung E 2006 Thin Solid Films 498 212
[14] Han Q G, Ma H A, Zhou L, Zhang C, Tian Y, Jia X P 2007 Rev. Sci. Instrum. 78 113906
[15] Han Q G, Ma H A, Huang G F, Zhang C, Li Z C, Jia X P 2009 Rev. Sci. Instrum. 80 096107
[16] Ma H A, Jia X P, Chen L X, Zhu P W, Guo W L, Guo X B, Wang Y D, Li S Q, Zou G T, Bex P 2002 J. Phys.: Condens. Matter. 14 11269
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