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Thermally grown silicon dioxide is commonly used in high-efficiency monocrystalline silicon solar cell designs as a diffusion mask, electroless plating mask, passivation layer and rudimentary anti-reflection coating. These high efficiency device designs also utilize upright random textured up-pyramids etched by alkalinous solution to minimize front surface reflection. The silicon solar cells passivated with thermal SiO2/plasma SiN stacks have the evident character: the dark reverse current-voltage curve presents "soft breakdown", and the shunt resistance is lower than that of silicon solar cells passivated with the plasma SiN. The study shows that the cause of monocrystalline silicon solar cell performance degradation is the dislocation induced by the thermal growth of silicon dioxide on textured wafers. The performance of thermal SiO2/plasma SiN stack passivated silicon solar cells has evident improvement when a 2-min isotropic etching was applied after surface texturing to round off the pyramids.
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Keywords:
- thermal oxidation /
- upright random texture /
- dislocation /
- silicon solar cells
[1] Green M A, Chong C M, Zhang F, Sproul A, Zolper J, Wenham S R 1988 Conference Record of the 20th IEEE Photovoltaics Specialists Conference p.411
[2] Schultz O, Glunz S W, Goldschmidt J C, Lautenschlager H, Leimenstoll A, Schneiderlochner E, Willeke G P 2004 Prog. Photovolt: Res. Appl. 12 553
[3] Hu S M 1991 J. Appl. Phys. 70 R53
[4] Fahey P M, Mader S R, Stiffler S R, Mohler R L, Mils J D, Slinkman J A 1992 IBM J. Develop 36 158
[5] Cousins P J, Cotter J E 2006 Solar Energy Materials & Solar Cells 90 228
[6] Breitenstein O, Bauer J, Trupke T, Bardos R A 2008Prog. Photovolt: Res. Appl. 16 325
[7] Jiun H G, Peter J C, Jeffrey E C 2006 Prog. Photovolt: Res. Appl.14 95
[8] Vishnu G, Sudha G 2004 IEEE Transactions on Electron Devices 51 1078
[9] Lal R, Sharan R 1986 Solid-State Electronics 29 1015
[10] Zhou C L, Cao X N, Wang W J, Zhao L, Li HL,Diao H W 2010 Acta Phys. Sin. 59 598 (in Chinese) [周春兰、曹晓宁、王文静、赵 雷、李海玲、刁宏伟 2010 59 598)]
[11] Hayoung P, Joon S L, Soonwoo K, Sewang Y, Donghwan K 2009 Current Applied Physics 9 1310
[12] Hayoung P, Joon S L, Soonwoo K, Sewang Y, Donghwan K 2010 Current Applied Physics 10 113
[13] Kurtz A D, Kulin S A, Averbach B L 1956 Phys. Rev. 101 1285
[14] Nabarro F R N 1952 Adv. Phys. 1 284
[15] Mathews J W1979Dislocation in Solids, ed. Nabarro F R N(North-Holland, Amsterdam)
[16] Breitenstein O, Altermatt P 2006 Conference Record of the 2006 IEEE 4th World Conference 1 879
[17] Breitenstein O, Bauer J, Lotnyk A, Wagner J M 2009 Superlattices and Microstructures 45 182
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[1] Green M A, Chong C M, Zhang F, Sproul A, Zolper J, Wenham S R 1988 Conference Record of the 20th IEEE Photovoltaics Specialists Conference p.411
[2] Schultz O, Glunz S W, Goldschmidt J C, Lautenschlager H, Leimenstoll A, Schneiderlochner E, Willeke G P 2004 Prog. Photovolt: Res. Appl. 12 553
[3] Hu S M 1991 J. Appl. Phys. 70 R53
[4] Fahey P M, Mader S R, Stiffler S R, Mohler R L, Mils J D, Slinkman J A 1992 IBM J. Develop 36 158
[5] Cousins P J, Cotter J E 2006 Solar Energy Materials & Solar Cells 90 228
[6] Breitenstein O, Bauer J, Trupke T, Bardos R A 2008Prog. Photovolt: Res. Appl. 16 325
[7] Jiun H G, Peter J C, Jeffrey E C 2006 Prog. Photovolt: Res. Appl.14 95
[8] Vishnu G, Sudha G 2004 IEEE Transactions on Electron Devices 51 1078
[9] Lal R, Sharan R 1986 Solid-State Electronics 29 1015
[10] Zhou C L, Cao X N, Wang W J, Zhao L, Li HL,Diao H W 2010 Acta Phys. Sin. 59 598 (in Chinese) [周春兰、曹晓宁、王文静、赵 雷、李海玲、刁宏伟 2010 59 598)]
[11] Hayoung P, Joon S L, Soonwoo K, Sewang Y, Donghwan K 2009 Current Applied Physics 9 1310
[12] Hayoung P, Joon S L, Soonwoo K, Sewang Y, Donghwan K 2010 Current Applied Physics 10 113
[13] Kurtz A D, Kulin S A, Averbach B L 1956 Phys. Rev. 101 1285
[14] Nabarro F R N 1952 Adv. Phys. 1 284
[15] Mathews J W1979Dislocation in Solids, ed. Nabarro F R N(North-Holland, Amsterdam)
[16] Breitenstein O, Altermatt P 2006 Conference Record of the 2006 IEEE 4th World Conference 1 879
[17] Breitenstein O, Bauer J, Lotnyk A, Wagner J M 2009 Superlattices and Microstructures 45 182
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