Investigation of thermodynamic progress of silicon ablated by nanosecond uv repetitive pulse laser

Bao Ling-Dong; Han Jing-Hua; Duan Tao; Sun Nian-Chun; Gao Xiang; Feng Guo-Ying; Yang Li-Ming; Niu Rui-Hua; Liu Quan-Xi

doi:10.7498/aps.61.197901

Abstract

The blind holes processing experiment is conducted on the silicon under the radiation of a 355 nm nanosecond UV repetitive pulse laser. With the increase of the laser pulse number, the variations of the silicon morphology,the depth and aperture of the blind holes are observed, and the thermodynamic process of UV laser irradiating silicon is analyzed. The results show that the formation of the blind silicon hole in the laser ablation process is due to the interaction between thermal effect and force effect. Thermal effect results in fusion, vaporization and even producing laser plasma by ionization in silicon, which is essential to the removal of the material. The molten material is compressed by the plasma shock wave and the expansion of the high-temperature gaseous material,and then ejection outward, which will benefit the further ablation; the force propagates along the laser transmission direction,perpendicular to the silicon surface, so the removal parts are distributed mainly along the depth direction of the hole, reaching a high aperture ratio, which is up to 8:1 in our experiments. In addition, the laser-induced plasma also prevents the effect of laser on the target surface, and with the increase of hole depth, laser defocusing occurs. The two aspects finally restrict the ablation depth. The results shows that in the process of laser irradiation on the material, the ablation efficiency is much higher when the former 100 pulses arrived than the sequent laser pulses.

Keywords:

Authors and contacts

1.
College of Electronics & Information Engineering, Sichuan University, Chengdu 610064, China;
2.
Laboratory for Extreme Conditions Matter Properties, Southwest University of Science and Technology, Mianyang 621010, China;
3.
Chengdu Fine Optical Engineering Research Center, Chengdu 610041, China;
4.
Southwest Institute of Technical Physics, Chengdu 610041, China
Funds: Project supported by the Major Program of the National Natural Science Foundation of China (Grant No.60890203), the Open Foundation of Laboratory for Extreme Conditions Matter Properties (Grant No.11zxjk08) and the Research fund for the Young Teachers of Sichuan University, China (Grant No.2009SCU11008).

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[10]	Landgraf R, Rieske R, Danilewsky A,Wolter K J 2008 Electronics System-Integration Technology Conference Dresden, Dresden, Sept 1—4, 2008 p1023
[11]	Lee Y H, Choi K J 2010 Int. J. Pres. Eng. Man. 11 501
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[21]	Durfee C G, Lynch J, Milchberg H 1995 Phys. Rev. E 51 2368
[22]	Phipps C, Turner T, Harrison R, York G, Osborne W, Anderson G, Corlis X, Haynes L, Steele H, Spicochi K 1988 J. Appl. Phys. 64 1083
[23]	Ren J 2005 Ph. D. Dissertation (California: stanford university)
[24]	Lu J Ni X W 1996Laser interactions with materials physics (1st Ed.) (Beijing: China Machine Press) p69 (in Chinese) [陆建, 倪晓武 1996 激光与材料相互作用物理学(北京:机械工业出版社) 第69页]
[25]	Ancona A, Sibillano T, Lugará P M, Gonnella G, Pascazio G, Maffione D 2006 J. Phys. D: Appl. Phys. 39 563
[26]	Dykhno I, Ignatchenko G, Bogachenkov E European Patent EP20000943390 [2002-06-12]
[27]	Armon E, Zvirin Y, Laufer G, Solan A 1989 J. Appl. Phys. 65 4995
[28]	Park K W, Na S J 2010 Appl. Surf. Sci. 256 2392
[29]	Modest M F 2006 Journal of Heat Transfer 128 653
[30]	Tao S, Wu B, Zhou Y, Gao Y 2009 J. Appl. Phys. 106 123507
[31]	Chen J K, Beraun J E 2003 J. Opt. A: Pure Appl. Op. 5 168
[32]	Pakhomov A, Thompson M, Gregory D 2003 J. Phys. D: Appl. Phys. 36 2067
[33]	Schaffer C B, Brodeur A, Mazur E 2001 Meas. Sci. Technol. 12 1784
[34]	Ngoi B, Venkatakrishnan K, Lim E, Tan B, Koh L 2001 Opt. Laser. Eng. 35 361
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[36]	Perez D, Lewis L 2004 Appl. Phys. A: Mater. 79 987
[37]	Lorazo P, Lewis L J, Meunier M 2003 Phys. Rev. Lett. 91 225502

Cited By

[1]	Norton J F Google Patents 3265855 [1966-08-09]
[2]	Young D J 2010 VLSI Design Automation and Test (VLSI-DAT), 2010 International Symposium on Salt Lake City, UT, USA, April 26—29, 2010, p130
[3]	Oita T 2009 Ultrasonics Symposium (IUS), 2009 IEEE International Tokyo, Japan, September 20—23, 2009, p1173
[4]	Bäuerle D 2011 Laser processing and chemistry (2nd Ed.) (Berlin and New York: Springer) p57
[5]	Steen W M, Mazumder J 1998 Laser material processing (2nd Ed.) (London and New York: Springer) p121
[6]	Simon P, Ihlemann J 1996 Appl. Phys. A: Mater. Sci. Proc. 63 505
[7]	Niino H, Kawaguchi Y, Sato T, Narazaki A, Gumpenberger T, Kurosaki R 2006 J. Laser Micro/Nanoeng 1 39
[8]	Pfleging W, Bernauer W, Hanemann T, Torge M 2002 Microsyst. Technol. 9 67
[9]	Zhu L H 2008 China construction dynamic: the sun energy 35 (in Chinese) [朱黎辉 2008 中国建设动态: 阳光能源 35]
[10]	Landgraf R, Rieske R, Danilewsky A,Wolter K J 2008 Electronics System-Integration Technology Conference Dresden, Dresden, Sept 1—4, 2008 p1023
[11]	Lee Y H, Choi K J 2010 Int. J. Pres. Eng. Man. 11 501
[12]	Brandi F, Burdet N, Carzino R, Diaspro A 2010 Opt. Express 18 23488
[13]	Herrmann R, Gerlach J, Campbell E 1998 Appl. Phys. A: Mater. Sci. Proc. 66 35
[14]	Allman 1994 Laser-beam interactions with materials physical principles and applications (Beijing: Science Press) p55 (in Chinese) [奥尔曼 1994 激光束与材料相互作用的物理原理及应用 (北京:科学出版社) 第55页]
[15]	Wakaki M, Kudo K,Shibuya T 2007 Physical properties and data of optical materials (1st Ed.) (California: CRC press) p86
[16]	Tao S, Wu B, Zhou Y, Gao Y 2009 J. Appl. Phys. 106 123505
[17]	Weber M J 2003 Handbook Of Optical Materials (1st Ed.) (California: CRC press) p145
[18]	D'Anna E, Luby S, Luches A, Majkova E, Martino M 1993 Appl. Phys. A: Mater. Sci. Proc. 56 429
[19]	Zhang L, Ni X W, Lu J, Liu J, Dai G 2011 Opt. Precis. Eng. 19 437 (in Chinese) [张梁, 倪晓武, 陆建, 刘剑, 戴罡 2011 光学精密工程 19 437]
[20]	Kodama R, Norreys P, Mima K, Dangor A, Evans R, Fujita H, Kitagawa Y, Krusheinick K, Miyakoshi T, Miyanaga N 2001 Nature 412 798
[21]	Durfee C G, Lynch J, Milchberg H 1995 Phys. Rev. E 51 2368
[22]	Phipps C, Turner T, Harrison R, York G, Osborne W, Anderson G, Corlis X, Haynes L, Steele H, Spicochi K 1988 J. Appl. Phys. 64 1083
[23]	Ren J 2005 Ph. D. Dissertation (California: stanford university)
[24]	Lu J Ni X W 1996Laser interactions with materials physics (1st Ed.) (Beijing: China Machine Press) p69 (in Chinese) [陆建, 倪晓武 1996 激光与材料相互作用物理学(北京:机械工业出版社) 第69页]
[25]	Ancona A, Sibillano T, Lugará P M, Gonnella G, Pascazio G, Maffione D 2006 J. Phys. D: Appl. Phys. 39 563
[26]	Dykhno I, Ignatchenko G, Bogachenkov E European Patent EP20000943390 [2002-06-12]
[27]	Armon E, Zvirin Y, Laufer G, Solan A 1989 J. Appl. Phys. 65 4995
[28]	Park K W, Na S J 2010 Appl. Surf. Sci. 256 2392
[29]	Modest M F 2006 Journal of Heat Transfer 128 653
[30]	Tao S, Wu B, Zhou Y, Gao Y 2009 J. Appl. Phys. 106 123507
[31]	Chen J K, Beraun J E 2003 J. Opt. A: Pure Appl. Op. 5 168
[32]	Pakhomov A, Thompson M, Gregory D 2003 J. Phys. D: Appl. Phys. 36 2067
[33]	Schaffer C B, Brodeur A, Mazur E 2001 Meas. Sci. Technol. 12 1784
[34]	Ngoi B, Venkatakrishnan K, Lim E, Tan B, Koh L 2001 Opt. Laser. Eng. 35 361
[35]	Zhang N, Zhu X, Yang J, Wang X, Wang M 2007 Phys. Rev. Lett. 99 167602
[36]	Perez D, Lewis L 2004 Appl. Phys. A: Mater. 79 987
[37]	Lorazo P, Lewis L J, Meunier M 2003 Phys. Rev. Lett. 91 225502

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Vol. 61, Issue 19 - 2012-10-05

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