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As a special metal surface state, optical Tamm state (OTS) has been widely used in designing the new generation of optical devices for its unique advantages in light control and operation. Based on distribute Bragg reflector (DBR)-metal-DBR (DMD)structure, asymmetric mechanism is introduced by mismatching central frequencies of the two DBRs to design and control the generation of OTS. Through the analysis of reflection spectrum and the electric field distribution characteristics, the interaction and variation rules of OTS on each side of metal are revealed. The results indicate that the DMD structure can support the presence of two OTSs with different intrinsic wavelengths. Besides, the mismatch will affect the strengths and intrinsic wavelengths of the two OTSs, i.e., the upper and lower branches of OTS appear with the variation of . In addition, polarization state and injection angle of incident light have a considerable influence on the strength and intrinsic wavelength of OTS.
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Keywords:
- metal surface state /
- optical Tamm state /
- distribute Bragg reflector
[1] Polo Jr J A, Lakhtakia A 2011 Laser Photon. Rev. 5 234
[2] Chen Y, Ming H 2012 Photon. Sensors 2 37
[3] Jing Q L, Du C G, Gao J C 2013 Acta Phys. Sin. 62 037302 (in Chinese) [荆庆丽, 杜春光, 高健存 2013 62 037302]
[4] Kaliteevski M, Iorsh I, Brand S, Abram R A, Chamberlain J M, Kavokin A V, Shelykh I A 2007 Phys. Rev. B 76 165415
[5] Symonds C, Lemaitre A, Homeyer E, Plenet J C, Bellessa J 2009 Appl. Phys. Lett. 95 151114
[6] Liew T C H, Kavokin A V, Ostatnicky T, Kaliteevski M, Shelykh I A, Abram R A 2010 Phys. Rev. B 82 033302
[7] Zhang W L, Rao Y J 2012 Chin. Phys. B 21 057107
[8] Guo J Y, Sun Y, Zhang Y W, Li H Q, Jiang H T, Chen H 2008 Phys. Rev. E 78 026607
[9] Chen Z F, Han P, Leung C W, Wang Y, Hu M Z, Chen Y H 2012 Opt. Express 20 21618
[10] Sasin M E, Seisyan R P, Kalitteevski M A, Brand S, Abram R A, Chamberlain J M, Egorov A Y, Vasil’ev A P, Mikhrin V S, Kavokin A V 2008 Appl. Phys. Lett. 92 251112
[11] Zhou H C 2012 Ph. D. Dissertation (Wuhan: Huazhong University of Science and Technology) (in Chinese) [周海春 2012 博士学位论文 (武汉: 华中科技大学)]
[12] Brckner R, Sudzius M, Hintschich S I, Fröb H, Lyssenko V G, Kaliteevski M A, Iorsh I, Abram R A, Kavokin A V, Leo K 2012 Appl. Phys. Lett. 100 062101
[13] Pitarke J M, Silkin V M, Chulkov E V, Echenique P M 2007 Rep. Prog. Phys. 70 1
[14] Rakic A D, Djurišic A B, Elazar J M, Majewski M L 1998 Appl. Opt. 37 5271
[15] Zhang W L, Yu S F 2010 Opt. Commun. 283 2622
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[1] Polo Jr J A, Lakhtakia A 2011 Laser Photon. Rev. 5 234
[2] Chen Y, Ming H 2012 Photon. Sensors 2 37
[3] Jing Q L, Du C G, Gao J C 2013 Acta Phys. Sin. 62 037302 (in Chinese) [荆庆丽, 杜春光, 高健存 2013 62 037302]
[4] Kaliteevski M, Iorsh I, Brand S, Abram R A, Chamberlain J M, Kavokin A V, Shelykh I A 2007 Phys. Rev. B 76 165415
[5] Symonds C, Lemaitre A, Homeyer E, Plenet J C, Bellessa J 2009 Appl. Phys. Lett. 95 151114
[6] Liew T C H, Kavokin A V, Ostatnicky T, Kaliteevski M, Shelykh I A, Abram R A 2010 Phys. Rev. B 82 033302
[7] Zhang W L, Rao Y J 2012 Chin. Phys. B 21 057107
[8] Guo J Y, Sun Y, Zhang Y W, Li H Q, Jiang H T, Chen H 2008 Phys. Rev. E 78 026607
[9] Chen Z F, Han P, Leung C W, Wang Y, Hu M Z, Chen Y H 2012 Opt. Express 20 21618
[10] Sasin M E, Seisyan R P, Kalitteevski M A, Brand S, Abram R A, Chamberlain J M, Egorov A Y, Vasil’ev A P, Mikhrin V S, Kavokin A V 2008 Appl. Phys. Lett. 92 251112
[11] Zhou H C 2012 Ph. D. Dissertation (Wuhan: Huazhong University of Science and Technology) (in Chinese) [周海春 2012 博士学位论文 (武汉: 华中科技大学)]
[12] Brckner R, Sudzius M, Hintschich S I, Fröb H, Lyssenko V G, Kaliteevski M A, Iorsh I, Abram R A, Kavokin A V, Leo K 2012 Appl. Phys. Lett. 100 062101
[13] Pitarke J M, Silkin V M, Chulkov E V, Echenique P M 2007 Rep. Prog. Phys. 70 1
[14] Rakic A D, Djurišic A B, Elazar J M, Majewski M L 1998 Appl. Opt. 37 5271
[15] Zhang W L, Yu S F 2010 Opt. Commun. 283 2622
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