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A refractive index sensing structure based on the Tamm state of photonic crystal with surface defect is proposed by combing the Tamm state of semi-infinite photonic crystal with the optical sensing mechanism of porous silicon, in which the efficient bearing mechanism of the porous silicon is introduced into the surface defect cavity. The existence of Tamm state is demonstrated at the edge between the defect cavity and the periodical photonic crystal structure, and the total reflection in the defect cavity is formed by adjusting the incident angle. The resonant defect peak is obtained in the reflection spectrum by adding an absorbing medium into the defect cavity in order to reduce the reflectivity of the resonant wavelength. The full width at half maximum and the quality factor (Q value) can be optimized by adjusting the parameters of photonic crystal. Based on those results, according to the relationship between Goos-Hänchen phase shift and the resonant wavelength, the model for the relationship between the resonant wavelength and the effective refractive index variation of porous silicon adsorbing layer caused by the change of the refractive index of the sample is established, and its refractive index sensing characteristics are analyzed. The numerical simulation results show that the Q value can attain to 1429 and the sensitivity is about 546.67 nm·RIU-1, which can demonstrate the effectiveness of the structure design and provide some theoretical references for designing the refractive index sensors with high Q values and sensitivities.
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Keywords:
- photonic crystal /
- porous silicon /
- surface defect cavity /
- refractive index sensor
[1] Zhang H Y, Yang L Q, Meng L, Nie J C, Ning T Y, Liu W M, Sun J Y, Wang P F 2012 Chin. Phys. B 21 020601
[2] Zhang D C, Yan Y R, Li Q, Yu T X, Cheng W, Wang L, Ju H X, Ding S J 2012 J. Biotechnol. 160 123
[3] Endo T, Ozawa S, Okuda N, Yanagida Y, Tanaka S, Hatsuzawa T 2010 Sens. Actuat. B: Chemical 148 269
[4] Li Y H, Yan Y R, Lei Y N, Zhao D, Yuan T X, Zhang D C, Cheng W, Ding S J 2014 Colloids and Surfaces B: Biointerfaces 120 15
[5] Chen F F, Fei W J, Sun L, Li Q H, Di J W, Wu Y 2014 Sens. Actuat. B: Chemical 191 337
[6] Maharana P K, Jha R 2012 Sens. Actuat. B: Chemical 169 161
[7] Chen Y, Wang W Y, Yu N 2014 Acta Phys. Sin. 63 034205 (in Chinese) [陈颖, 王文跃, 于娜 2014 63 034205]
[8] Feng S, Wang Y Q 2011 Chin. Phys. B 20 104207
[9] Derbali J, Abdel Malek F, Bouchriha H 2013 Optik 124 3936
[10] Jiang B, Liu A J, Chen W, Xing M X, Zhou W J, Zheng W H 2010 Acta Phys. Sin. 59 8548 (in Chinese) [江斌, 刘安金, 陈微, 邢名欣, 周文君, 郑婉华 2010 59 8548]
[11] Zhang H Y, Jia Z H, L X Y, Zhou J, Chen L L, Liu R X, Ma J 2013 Biosens. Bioelectron. 44 89
[12] Wu C, Rong G G, Xu J T, Pan S F, Zhu Y X 2012 Physica E 44 1787
[13] Rostami A, Khezri M, Golmohammadi S 2012 Optik 123 847
[14] Zhang D L, Cherkaev E, Lamoureux M P 2011 Appl. Math. Computat. 217 7092
[15] Sun P, Hu M, Liu B, Sun F Y, Xu L J 2011 Acta Phys. Sin. 60 057303 (in Chinese) [孙鹏, 胡明, 刘博, 孙凤云, 许路加 2011 60 057303]
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[1] Zhang H Y, Yang L Q, Meng L, Nie J C, Ning T Y, Liu W M, Sun J Y, Wang P F 2012 Chin. Phys. B 21 020601
[2] Zhang D C, Yan Y R, Li Q, Yu T X, Cheng W, Wang L, Ju H X, Ding S J 2012 J. Biotechnol. 160 123
[3] Endo T, Ozawa S, Okuda N, Yanagida Y, Tanaka S, Hatsuzawa T 2010 Sens. Actuat. B: Chemical 148 269
[4] Li Y H, Yan Y R, Lei Y N, Zhao D, Yuan T X, Zhang D C, Cheng W, Ding S J 2014 Colloids and Surfaces B: Biointerfaces 120 15
[5] Chen F F, Fei W J, Sun L, Li Q H, Di J W, Wu Y 2014 Sens. Actuat. B: Chemical 191 337
[6] Maharana P K, Jha R 2012 Sens. Actuat. B: Chemical 169 161
[7] Chen Y, Wang W Y, Yu N 2014 Acta Phys. Sin. 63 034205 (in Chinese) [陈颖, 王文跃, 于娜 2014 63 034205]
[8] Feng S, Wang Y Q 2011 Chin. Phys. B 20 104207
[9] Derbali J, Abdel Malek F, Bouchriha H 2013 Optik 124 3936
[10] Jiang B, Liu A J, Chen W, Xing M X, Zhou W J, Zheng W H 2010 Acta Phys. Sin. 59 8548 (in Chinese) [江斌, 刘安金, 陈微, 邢名欣, 周文君, 郑婉华 2010 59 8548]
[11] Zhang H Y, Jia Z H, L X Y, Zhou J, Chen L L, Liu R X, Ma J 2013 Biosens. Bioelectron. 44 89
[12] Wu C, Rong G G, Xu J T, Pan S F, Zhu Y X 2012 Physica E 44 1787
[13] Rostami A, Khezri M, Golmohammadi S 2012 Optik 123 847
[14] Zhang D L, Cherkaev E, Lamoureux M P 2011 Appl. Math. Computat. 217 7092
[15] Sun P, Hu M, Liu B, Sun F Y, Xu L J 2011 Acta Phys. Sin. 60 057303 (in Chinese) [孙鹏, 胡明, 刘博, 孙凤云, 许路加 2011 60 057303]
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