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A method of preparing film silicon with variable optical gap is introduced, and the relevant results are given. An easy way to determine the film optical gap by transmittivity curve tangent is shown, and the preparation craftwork and conditions are given. The gap state distribution maps of various materials are presented. In experiment, it is found that the optical gap width of material is related not only to the quantum size effect, but also to the height and width of the barrier formed by lacuna, and to the length of short range order (atom cluster length) as well. A relationship between optical gap of silicon film and atom cluster length is given. Computations show that electron liquid level lifts in potential well with atom cluster length increasing, and the scattering of carrier is weakened by defect barrier. When the atom cluster length is shorter, the electron liquid level does not always lift with atom cluster length increasing, but fluctuates heavily and forms an indention wave. The computations also show that in the case of a constant ratio of the barrier width to the length of the atomic string, the electronic liquid level is also related to the barrier height.
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Keywords:
- film silicon /
- variable optical gap /
- gap states distribution /
- electronic liquid level fluctuating
[1] Huynh W U, Dittmer J J, Alivisatos A P 2002 Science 295 2425
[2] Liu W S, Wu H M, Tsao F H, Hsu T L, Chyi J I 2012 Sol. Energy Mater. Sol. Cells 105 237
[3] Mller J, Rech B, Springer J 2004 Sol. Energy 77 917
[4] Razykov T M, Ferekides C S, Morel D, Stefanakos E, Ullal H S, Upadhyaya H M 2011 Sol. Energy 85 1580
[5] Hegedus S S, McCandless B E 2005 Sol. Energy Mat. Sol. Cells 88 75
[6] Tvrdy K, Kamat P V 2010 Comprehensive Nanoscience and Technology 4 257
[7] Poulose A C, Veeranarayanan S, Varghese S H, Yoshida Y, Maekawa T, Kumar D S 2012 Chem. Phys. Lett. 539-540 197
[8] Dorfs D, Krahne R, Falqui A, Manna L, Giannini C, Zanchet D 2010 Comprehensive Nanoscience and Technology 1 219
[9] Shi G H, Shang Z B, Wang Y, Jin W J, Zhang T C 2008 Spectrochim. Acta Part A 70 247
[10] Shen Q, Sato T, Hashimoto M, Chenc C, Toyoda T 2006 Thin Solid Films 499 299
[11] Mora-SeróI, Dittrich T, Susha A S, Rogach A L, Bisquert J 2008 Thin Solid Films 516 6994
[12] Ramanathan K, Contreras M A, Perkins C L, Asher S, Hasoon F S, Keane J, Young D, Romero M, Metzger W, Noufi R, Ward J, Duda A 2003 Prog. Photovolt.: Res. Appl. 11 225
[13] Baskoutas S, Terzis A F 2006 J. Appl. Phys. 99 013708
[14] Schaller R D, Klimov V I 2004 Phys. Rev. Lett. 92 186601
[15] Mocatta D, Cohen G, Schattner J, Millo O, Rabani E, Banin U 2011 Science 332 77
[16] Cao Y C 2011 Science 332 48
[17] Kulakci M, Serincan U, Turan R, Finstad T G 2008 Nanotechnology 45 455403
[18] Conibeer G, Green M, Corkish R, Cho Y, Cho E C, Jiang C W, Fangsuwannarak T, Pink E, Huang Y D, Puzzer T, Trupke T, Richards B, Shalav A, Lin K L 2006 Thin Solid Films 511-512 654
[19] Park S, Cho E, Song D Y, Conibeer G, Green M A 2009 Sol. Energy Mater. Sol. Cells 93 684
[20] Timmerman D, Izeddin I, Stallinga P, Yassievich I N, Gregorkiewicz T 2008 Nature Photon. 2 61
[21] Di D, Perez-Wurfl I, Conibeer G, Green M A 2010 Sol. Energy Mater. Sol. Cells 94 2238
[22] Wurfl P, Ma L, Lin D, Hao X, Green M A, Conibeer G 2012 Sol. Energy Mater. Sol. Cells 100 65
[23] Zhang Z G 2008 Acta Phys. Sin. (in Chinese) 57 5823 [张治国2008 57 5823]
[24] Ji Z G 2005 Physics of Semiconductor (Hangzhou: Zhejiang University Press) p130 (in Chinese) [季振国 2005 半导体物理学(杭州: 浙江大学出版社)第130页]
[25] Guo Y C, Wang Z X 1984 Amorphous Solid Physics (Beijing: Science Press) p246 (in Chinese) [郭贻诚, 王震西 1984非晶态物理学 (北京: 科学出版社) 第246页]
[26] Chen K J 1987 Amorphous Semiconductor Physics (Beijing: China Academic Press) p91 (in Chinese) [陈坤基 1987非晶态半导体物理引论 (北京: 中国学术出版社)第91页]
[27] Luo J S, Rong A L 1986 Amorphous Semiconductor (Xi'an: Xi'an Jiao Tong University Press) p101 (in Chinese) [罗晋生, 戎霭伦 1986非晶半导体 (西安: 西安交通大学出版社)第101]
[28] Ji Z G 2005 Physics of Semiconductor (Zhejiang: Zhejiang University Press) p139 (in Chinese) [季振国 2005半导体物理学 (浙江: 浙江大学出版社) 第139页]
[29] Zhang Z G 2011 Chin. Sci. Bull. 56 2133 (in Chinese) [张治国 2011科学通报 56 2133]
[30] Wu Z Q, Wang B 2001 Film Growing (Beijing: Science Press) p170 (in Chinise) [吴自勤, 王兵 2001薄膜生长 (北京: 科学出版社) 第170页]
[31] Zhang Z G 2012 Appl. Mech. Mater. 217-219 1038
[32] Zhang Z G 2010 Chin. Phys. B 19 127802
-
[1] Huynh W U, Dittmer J J, Alivisatos A P 2002 Science 295 2425
[2] Liu W S, Wu H M, Tsao F H, Hsu T L, Chyi J I 2012 Sol. Energy Mater. Sol. Cells 105 237
[3] Mller J, Rech B, Springer J 2004 Sol. Energy 77 917
[4] Razykov T M, Ferekides C S, Morel D, Stefanakos E, Ullal H S, Upadhyaya H M 2011 Sol. Energy 85 1580
[5] Hegedus S S, McCandless B E 2005 Sol. Energy Mat. Sol. Cells 88 75
[6] Tvrdy K, Kamat P V 2010 Comprehensive Nanoscience and Technology 4 257
[7] Poulose A C, Veeranarayanan S, Varghese S H, Yoshida Y, Maekawa T, Kumar D S 2012 Chem. Phys. Lett. 539-540 197
[8] Dorfs D, Krahne R, Falqui A, Manna L, Giannini C, Zanchet D 2010 Comprehensive Nanoscience and Technology 1 219
[9] Shi G H, Shang Z B, Wang Y, Jin W J, Zhang T C 2008 Spectrochim. Acta Part A 70 247
[10] Shen Q, Sato T, Hashimoto M, Chenc C, Toyoda T 2006 Thin Solid Films 499 299
[11] Mora-SeróI, Dittrich T, Susha A S, Rogach A L, Bisquert J 2008 Thin Solid Films 516 6994
[12] Ramanathan K, Contreras M A, Perkins C L, Asher S, Hasoon F S, Keane J, Young D, Romero M, Metzger W, Noufi R, Ward J, Duda A 2003 Prog. Photovolt.: Res. Appl. 11 225
[13] Baskoutas S, Terzis A F 2006 J. Appl. Phys. 99 013708
[14] Schaller R D, Klimov V I 2004 Phys. Rev. Lett. 92 186601
[15] Mocatta D, Cohen G, Schattner J, Millo O, Rabani E, Banin U 2011 Science 332 77
[16] Cao Y C 2011 Science 332 48
[17] Kulakci M, Serincan U, Turan R, Finstad T G 2008 Nanotechnology 45 455403
[18] Conibeer G, Green M, Corkish R, Cho Y, Cho E C, Jiang C W, Fangsuwannarak T, Pink E, Huang Y D, Puzzer T, Trupke T, Richards B, Shalav A, Lin K L 2006 Thin Solid Films 511-512 654
[19] Park S, Cho E, Song D Y, Conibeer G, Green M A 2009 Sol. Energy Mater. Sol. Cells 93 684
[20] Timmerman D, Izeddin I, Stallinga P, Yassievich I N, Gregorkiewicz T 2008 Nature Photon. 2 61
[21] Di D, Perez-Wurfl I, Conibeer G, Green M A 2010 Sol. Energy Mater. Sol. Cells 94 2238
[22] Wurfl P, Ma L, Lin D, Hao X, Green M A, Conibeer G 2012 Sol. Energy Mater. Sol. Cells 100 65
[23] Zhang Z G 2008 Acta Phys. Sin. (in Chinese) 57 5823 [张治国2008 57 5823]
[24] Ji Z G 2005 Physics of Semiconductor (Hangzhou: Zhejiang University Press) p130 (in Chinese) [季振国 2005 半导体物理学(杭州: 浙江大学出版社)第130页]
[25] Guo Y C, Wang Z X 1984 Amorphous Solid Physics (Beijing: Science Press) p246 (in Chinese) [郭贻诚, 王震西 1984非晶态物理学 (北京: 科学出版社) 第246页]
[26] Chen K J 1987 Amorphous Semiconductor Physics (Beijing: China Academic Press) p91 (in Chinese) [陈坤基 1987非晶态半导体物理引论 (北京: 中国学术出版社)第91页]
[27] Luo J S, Rong A L 1986 Amorphous Semiconductor (Xi'an: Xi'an Jiao Tong University Press) p101 (in Chinese) [罗晋生, 戎霭伦 1986非晶半导体 (西安: 西安交通大学出版社)第101]
[28] Ji Z G 2005 Physics of Semiconductor (Zhejiang: Zhejiang University Press) p139 (in Chinese) [季振国 2005半导体物理学 (浙江: 浙江大学出版社) 第139页]
[29] Zhang Z G 2011 Chin. Sci. Bull. 56 2133 (in Chinese) [张治国 2011科学通报 56 2133]
[30] Wu Z Q, Wang B 2001 Film Growing (Beijing: Science Press) p170 (in Chinise) [吴自勤, 王兵 2001薄膜生长 (北京: 科学出版社) 第170页]
[31] Zhang Z G 2012 Appl. Mech. Mater. 217-219 1038
[32] Zhang Z G 2010 Chin. Phys. B 19 127802
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