[1] |
Fan Jin-Ze, Fang Zhan-Bo, Luo Chao-Jie, Zhang Hui. Charge density waves in low-dimensional material. Acta Physica Sinica,
2022, 71(12): 127103.
doi: 10.7498/aps.71.20220052
|
[2] |
Luo Xiao-Dong, Di Guo-Qing. Ge and Nb co-doped TiO2 films with narrow band gap and low resistivity prepared by sputtering. Acta Physica Sinica,
2012, 61(20): 206803.
doi: 10.7498/aps.61.206803
|
[3] |
Lei Jie-Mei, Lü Liu, Liu Ling, Xu Xiao-Liang. Preparation and characterization of magnetic nanoparticles of Fe3O4 coated with mesoporous SiO2. Acta Physica Sinica,
2011, 60(1): 017501.
doi: 10.7498/aps.60.017501
|
[4] |
Zhou Hong-Juan, Zhen Cong-Mian, Zhang Yong-Jin, Zhao Cui-Lian, Ma Li, Hou Deng-Lu. Preparation and magnetism of the N doped SiO2 thin film. Acta Physica Sinica,
2010, 59(5): 3499-3503.
doi: 10.7498/aps.59.3499
|
[5] |
Chen Xue-Feng, Qi Kai-Tian, Li Bing, Sheng Yong, Zhang Yan, Yang Chuan-Lu. Density functional theory study of silica clusters (SiO2)n-(n≤7). Acta Physica Sinica,
2010, 59(7): 4598-4601.
doi: 10.7498/aps.59.4598
|
[6] |
Ma Bao-Hong, Li Yan, Wang Cheng-Wei, Wang Jian, Chen Jian-Biao, Liu Wei-Min. Investigation of the UV absorption of porous TiO2/Al/SiO2 nanostructures. Acta Physica Sinica,
2008, 57(1): 586-591.
doi: 10.7498/aps.57.586
|
[7] |
Zhao Wen-Ji, Kong Ming, Huang Bi-Long, Li Ge-Yang. Effect of SiO2 crystallization on AlN/SiO2 nano-multilayers with superhardness effect. Acta Physica Sinica,
2007, 56(3): 1574-1580.
doi: 10.7498/aps.56.1574
|
[8] |
Wei Yong-Xia, Qian Xiao-Mei, Yu Xiao-Zhu, Ye Chao, Ning Zhao-Yuan, Liang Rong-Qing. Effect of O2-doping on bonding configuration and electric properties of SiCOH films prepared by decamethylcyclopentasiloxane electron cyclotron resonance plasma. Acta Physica Sinica,
2007, 56(2): 1172-1176.
doi: 10.7498/aps.56.1172
|
[9] |
He Zhi-Wei, Zhen Cong-Mian, Lan Wei, Wang Yin-Yue. Deposition of nanoporous silica thin films by sol-gel. Acta Physica Sinica,
2003, 52(12): 3130-3134.
doi: 10.7498/aps.52.3130
|
[10] |
Wang Ji-Suo, Feng Jian, Liu Tang-Kun, Zhan Ming-Sheng. . Acta Physica Sinica,
2002, 51(9): 1983-1988.
doi: 10.7498/aps.51.1983
|
[11] |
WU GUANG-MING, WANG YU, SHEN JUN, YANG TIAN-HE, ZHANG QING-YUAN, ZHOU BIN, DENG ZHONG-SHENG, FAN BIN, ZHOU DONG-PING, ZHANG FENG-SHAN. . Acta Physica Sinica,
2001, 50(1): 175-181.
doi: 10.7498/aps.50.175
|
[12] |
CHEN KAI-MAO, JIN SI-XUAN, WU LAN-QING, ZENG SHU-RONG, LIU HONG-FEI. INTERFACE STATES AND DEEP CENTERS IN Au-DOPED MOS STRUCTURES. Acta Physica Sinica,
1993, 42(8): 1324-1332.
doi: 10.7498/aps.42.1324
|
[13] |
CHEN KAI-MAO, WU LAN-QING, PENG QING-ZHI, LIU HONG-FEI. DEEP LEVEL IN BOTH Si/SiO2 INTERFACE AND ITS NEIGH-BOURHOOD AND Si/SiO2 INTERFACE STATES IN p TYPE SILICON MOS STRUCTURE. Acta Physica Sinica,
1992, 41(11): 1870-1879.
doi: 10.7498/aps.41.1870
|
[14] |
LIU ZHI-HONG, CHEN PU-SHENG, LIU BAI-YONG, CHENG YAO-ZONG. BREAKDOWN CHARACTERISTICS OF RAPID THERMAL NITRIDED SiO2 FILM OF 150? THICKNESS. Acta Physica Sinica,
1991, 40(1): 154-160.
doi: 10.7498/aps.40.154
|
[15] |
ZHU MEI-FANG, XU ZHENG-YI. AN INVESTIGATION OF DENSITY OF GAP STATES IN AMORPHOUS SEMICONDUCTORS BY THERMOSTI-MULATED CONDUCTIVITY SPECTRA. Acta Physica Sinica,
1989, 38(12): 1988-1995.
doi: 10.7498/aps.38.1988
|
[16] |
SU ZI-MIN, PENG SHAO-QI. DETERMINATION OF THE GAP STATE DISTRIBUTION IN a-Si:H BY THE METHOD OF INTERNAL PHOTOEMISSION TRANSIENT CURRENT TEMPERATURE SPECTROSCOPY. Acta Physica Sinica,
1986, 35(6): 731-740.
doi: 10.7498/aps.35.731
|
[17] |
. . Acta Physica Sinica,
1966, 22(8): 961-966.
doi: 10.7498/aps.22.961
|
[18] |
. . Acta Physica Sinica,
1965, 21(1): 221-222.
doi: 10.7498/aps.21.221
|
[19] |
SHIN SHIH-KONG, HUANG CHAANG, YU FUNG-SHU. MEASUREMENT OF THE THICKNESS OF THERMALLY GROWN SiO2 THIN FILMS. Acta Physica Sinica,
1964, 20(7): 654-661.
doi: 10.7498/aps.20.654
|
[20] |
HSU PEI-WEI, KUNG FAN-MEI, KUNG HSUCH-HUI. K-K RESONANCE. Acta Physica Sinica,
1964, 20(11): 1129-1134.
doi: 10.7498/aps.20.1129
|