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2006, 55(6): 2936-2940.
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1992, 41(6): 992-998.
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1989, 38(8): 1235-1244.
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DAI GUO-CAI, ZHANG RUI-QIN, GUAN DA-REN, CAI ZHENG-TING. A STUDY ON MECHANISM OF DOPPING IN a-Si:H. Acta Physica Sinica,
1989, 38(5): 829-833.
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ZHU MEI-FANG, XU ZHENG-YI. AN INVESTIGATION OF DENSITY OF GAP STATES IN AMORPHOUS SEMICONDUCTORS BY THERMOSTI-MULATED CONDUCTIVITY SPECTRA. Acta Physica Sinica,
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1988, 37(2): 189-196.
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CHENG XING-KUI, ZHAO WEN-JIN, DAI GUO-CAI. ELECTRONIC TRANSPORT PROPERTIES OF HIGH CONDUCTIVITY a-Si:H:Y ALLOY. Acta Physica Sinica,
1988, 37(3): 481-484.
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WANG SHU-LIN, CHENG RU-GUANG. DOPING EFFECT IN a-Si:H/a-SiNx:H SUPERLATTICES. Acta Physica Sinica,
1988, 37(7): 1119-1123.
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WU WEN-HAO, HAN DA-XING. MEASUREMENT OF THE DENSITY OF GAP STATES IN AMORPHOUS SEMICONDUCTORS BY INFRARED STIMULATED CURRENTS. Acta Physica Sinica,
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1987, 36(12): 1529-1537.
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CHEN GUANG-HUA, PENG YING-QUAN, CHEN JI-HONG. STATISTICAL TEEORY OF IMPURITIES AND DEFECTS IN a-Si:H. Acta Physica Sinica,
1987, 36(4): 524-528.
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