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We have studied the effect of population inversion associated with the electron and hole injection in graphene layer n-i-p structures with split gates at room temperature. Considering the transverse electric field screening of the n-section, we calculated the dependence of the electron-hole effective temperature and optical phonon effective temperature on the gate-voltage. It is shown that the injection can lead to cooling of the electron-hole plasma in n-section to the temperatures lower than the lattice temperature. The current-voltage characteristics, and the frequency-dependent dynamic conductivity are calculated, the frequency-dependent dynamic conductivity can be negative in the terahertz frequency range at a certain applied voltage. The study demonstrates that electron-hole plasma cooling can enhance the negative dynamic conductivity effect and improve the feasibility of terahertz lasing.
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Keywords:
- graphene /
- n-i-p structure /
- effective temperature /
- dynamic conductivity
[1] Han P Y, Liu W, Xie Y H, Zhang X C 2009 Physics 38 06 (in Chinese) [韩鹏昱, 刘伟, 谢亚红, 张希成 2009 物理 38 06]
[2] Castro Neto A H, Guinea F, Peres N M R, Novoselov K S, Geim A K 2009 Rev. Mod. Phys. 81 109
[3] Sprinkle M, Suegel D, Hu Y, Hicks J, Tejeda A, Taleb-Ibrahimi A, Le Fèvre P, Bertran F, Vizzini S, Enriquez H, Chiang S, Soukiassian P, Berger C, de Heer W A, Lanzara A, Conrad E H 2009 Phys. Rev. Lett. 103 226803
[4] Orlita M, Potemski M 2010 Semicond. Sci. Technol. 25 063001
[5] Ryzhii V, Ryzhii M, Otsuji T 2007 J. Appl. Phys. 101 083114
[6] Dubinov A A, Aleshkin V Ya, Mitin V, Otsuji T, Ryzhii V 2011 J. Phys.: Condens. Matter 23 145302
[7] Ryzhii V, Ryzhii M, Satou A, Otsuji T, Dubinov A A, Aleshkin V Ya 2009 J. Appl. Phys. 106 084507
[8] Ryzhii V, Dubinov A A, Otsuji T, Mitin V, Shur M S 2010 J. Appl. Phys. 107 054505
[9] Ryzhii M, Ryzhii V 2007 Jpn. J. Appl. Phys. 46 L151
[10] Ryzhii V, Ryzhii M, Mitin V, Otsuji T 2011 J. Appl. Phys. 110 094503
[11] Ryzhii M, Ryzhii V, Otsuji T, Mitin V, Shur M S 2010 Phys. Rev. B 82 075419
[12] Zhang Y P, Zhang H Y, Yin Y H, Liu L Y, Zhang X, Gao Y, Zhang H Y 2012 Acta Phys. Sin. 61 047803 (in Chinese) [张玉萍, 张洪艳, 尹怡恒, 刘陵玉, 张晓, 高营, 张会云 2012 61 047803]
[13] Ryzhii V, Ryzhii M, Mitin V, Satou A, Otsuj T 2011 Jpn. J. Appl. Phys. 50 094001
[14] Rana F, George P A, Strait J H, Shivaraman S, Chanrashekhar M, Spencer M G 2009 Phys. Rev. B 79 115447
[15] Wang H, Strait J H, George P A, Shivaraman S, Shields V D, Chandrashekhar M, Hwang J, Rana F, Spencer M G, Ruiz-Vargas C S, Park J 2010 Appl. Phys. Lett. 96 081917
[16] Auer C, Schurer F, Ertler C 2006 Phys. Rev. B 74 165409
[17] Pennigton G, Kilpatrick S J, Wickenden A E 2008 Appl. Phys. Lett. 93 093110
[18] George P A, Strait J, Dawlaty J, Shivaraman S, Chandrashekhar M, Rana F, Spencer M G 2008 Nano Lett. 8 4248
[19] Kim R, Perebeinos V, Avouris P 2011 Phys. Rev. B 84 075449
[20] Falkovsky L A 2007 Phys. Rev. B 75 033409
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[1] Han P Y, Liu W, Xie Y H, Zhang X C 2009 Physics 38 06 (in Chinese) [韩鹏昱, 刘伟, 谢亚红, 张希成 2009 物理 38 06]
[2] Castro Neto A H, Guinea F, Peres N M R, Novoselov K S, Geim A K 2009 Rev. Mod. Phys. 81 109
[3] Sprinkle M, Suegel D, Hu Y, Hicks J, Tejeda A, Taleb-Ibrahimi A, Le Fèvre P, Bertran F, Vizzini S, Enriquez H, Chiang S, Soukiassian P, Berger C, de Heer W A, Lanzara A, Conrad E H 2009 Phys. Rev. Lett. 103 226803
[4] Orlita M, Potemski M 2010 Semicond. Sci. Technol. 25 063001
[5] Ryzhii V, Ryzhii M, Otsuji T 2007 J. Appl. Phys. 101 083114
[6] Dubinov A A, Aleshkin V Ya, Mitin V, Otsuji T, Ryzhii V 2011 J. Phys.: Condens. Matter 23 145302
[7] Ryzhii V, Ryzhii M, Satou A, Otsuji T, Dubinov A A, Aleshkin V Ya 2009 J. Appl. Phys. 106 084507
[8] Ryzhii V, Dubinov A A, Otsuji T, Mitin V, Shur M S 2010 J. Appl. Phys. 107 054505
[9] Ryzhii M, Ryzhii V 2007 Jpn. J. Appl. Phys. 46 L151
[10] Ryzhii V, Ryzhii M, Mitin V, Otsuji T 2011 J. Appl. Phys. 110 094503
[11] Ryzhii M, Ryzhii V, Otsuji T, Mitin V, Shur M S 2010 Phys. Rev. B 82 075419
[12] Zhang Y P, Zhang H Y, Yin Y H, Liu L Y, Zhang X, Gao Y, Zhang H Y 2012 Acta Phys. Sin. 61 047803 (in Chinese) [张玉萍, 张洪艳, 尹怡恒, 刘陵玉, 张晓, 高营, 张会云 2012 61 047803]
[13] Ryzhii V, Ryzhii M, Mitin V, Satou A, Otsuj T 2011 Jpn. J. Appl. Phys. 50 094001
[14] Rana F, George P A, Strait J H, Shivaraman S, Chanrashekhar M, Spencer M G 2009 Phys. Rev. B 79 115447
[15] Wang H, Strait J H, George P A, Shivaraman S, Shields V D, Chandrashekhar M, Hwang J, Rana F, Spencer M G, Ruiz-Vargas C S, Park J 2010 Appl. Phys. Lett. 96 081917
[16] Auer C, Schurer F, Ertler C 2006 Phys. Rev. B 74 165409
[17] Pennigton G, Kilpatrick S J, Wickenden A E 2008 Appl. Phys. Lett. 93 093110
[18] George P A, Strait J, Dawlaty J, Shivaraman S, Chandrashekhar M, Rana F, Spencer M G 2008 Nano Lett. 8 4248
[19] Kim R, Perebeinos V, Avouris P 2011 Phys. Rev. B 84 075449
[20] Falkovsky L A 2007 Phys. Rev. B 75 033409
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