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As a lead-free piezoelectric material with potential application, 0.5Ba(Ti0.8Zr0.2)O3-0.5(Ba0.7Ca0.3)TiO3 (BZT-0.5BCT) ceramics, which has a morphotropic phase boundary composition, deserves much attention due to its excellent ferroelectric and piezoelectric properties. BZT-0.5BCT lead-free piezoelectric film has been synthesized on a Si (100) substrate by Sol-Gel process. The topography of the film measured using an atomic force microscope and a scanning electron microscope shows that the surface of the prepared film is smooth, and the grain is in the shape of hemisphere with a diameter of 80-100 nm. The film is 1.7 μm in thickness, with pores inside. Friction experiments show that the friction between the tip and the piezoelectric film is much larger than that between the tip and the SiO2 substrate, because of the existence of electrostatic force between the film and the silicon tip. However, the friction coefficients obtained are approximately equal. Nano-scratch experiments show that the BZT-0.5BCT film has a high normal carrying capacity, but a poor tangential wear resistance. The average elastic modulus of the film is 23.64 GPa ± 5 GPa, and its hardness is 2.7-4 GPa, both being slightly lower than those of the bulk value in PZT ceramics.
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Keywords:
- BZT-BCT film /
- nano-friction /
- nanoindentation /
- nano scratch tester
[1] Jaffe B, Cook W, Jaffe H 1971 Piezoeletric Ceramics (New York: Academic Press) p92
[2] Cross E 2004 Nature 432 24
[3] Saito Y, Takao H, Tani T, Nonoyama T, Takatori K, Homma T, Nagaya T, Nakamura M 2004 Nature 432 84
[4] He C, Fu X, Xu F, Wang J, Zhu K, Du C, Liu Y 2012 Chin. Phys. B 21 054207
[5] He C, Xu F, Wang J, Du C, Zhu K, Liu Y 2011 J. Appl. Phys. 110 083513
[6] He C, Chen H, Sun L, Wang J, Xu F, Du C, Zhu K, Liu Y 2012 Cryst. Res. Tech. 47 610
[7] Takenaka T, Nagata H 2005 J. Eur. Ceram. Soc. 25 2693
[8] Ren X B 2004 Nat. Mater. 3 91
[9] Zhang S J, Xia R, Shrout T R, Zang G Z, Wang J F 2006 J. Appl. Phys. 100 104108
[10] Bao H X, Zhou C, Xue D Z, Gao J H, Ren X B 2010 J. Phys. D: Appl. Phys. 43 465401
[11] Shrout T R, Zhang S J 2007 J. Electroceram. 19 111
[12] Liu W F, Ren X B 2009 Phys. Rev. Lett. 103 257602
[13] Hutter J L, Bechhoefer J 1993 Rev. Sci. Instrum. 64 1868
[14] Ogletree D F, Carpick R W, Salmeron M 1996 Rev. Sci. Instrum. 67 3298
[15] Oliver W C, Pharra G M 2004 J. Mater. Res. 19 3
[16] Mate C, McClelland G, Erlandsson R, Chiang S 1987 Phys. Rev. Lett. 591942
[17] Bahr D F, Robach J S, Wring J S, Francis L F, Gerberich W W 1999 Mater. Sci. Eng. A 259 126
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[1] Jaffe B, Cook W, Jaffe H 1971 Piezoeletric Ceramics (New York: Academic Press) p92
[2] Cross E 2004 Nature 432 24
[3] Saito Y, Takao H, Tani T, Nonoyama T, Takatori K, Homma T, Nagaya T, Nakamura M 2004 Nature 432 84
[4] He C, Fu X, Xu F, Wang J, Zhu K, Du C, Liu Y 2012 Chin. Phys. B 21 054207
[5] He C, Xu F, Wang J, Du C, Zhu K, Liu Y 2011 J. Appl. Phys. 110 083513
[6] He C, Chen H, Sun L, Wang J, Xu F, Du C, Zhu K, Liu Y 2012 Cryst. Res. Tech. 47 610
[7] Takenaka T, Nagata H 2005 J. Eur. Ceram. Soc. 25 2693
[8] Ren X B 2004 Nat. Mater. 3 91
[9] Zhang S J, Xia R, Shrout T R, Zang G Z, Wang J F 2006 J. Appl. Phys. 100 104108
[10] Bao H X, Zhou C, Xue D Z, Gao J H, Ren X B 2010 J. Phys. D: Appl. Phys. 43 465401
[11] Shrout T R, Zhang S J 2007 J. Electroceram. 19 111
[12] Liu W F, Ren X B 2009 Phys. Rev. Lett. 103 257602
[13] Hutter J L, Bechhoefer J 1993 Rev. Sci. Instrum. 64 1868
[14] Ogletree D F, Carpick R W, Salmeron M 1996 Rev. Sci. Instrum. 67 3298
[15] Oliver W C, Pharra G M 2004 J. Mater. Res. 19 3
[16] Mate C, McClelland G, Erlandsson R, Chiang S 1987 Phys. Rev. Lett. 591942
[17] Bahr D F, Robach J S, Wring J S, Francis L F, Gerberich W W 1999 Mater. Sci. Eng. A 259 126
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