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A good rectifying behavior is observed in a temperature range from 80 K to 300 K in the BaTiO3/p-Si heterostructure, which is fabricated by a pulse laser deposition. The diffusion voltage (VD) decreases with the increase of temperature. A significant photocarrier injection effect is also observed with light irradiation. The photocarrier injection effect increases with the energy of photon increasing. Meanwhile, R-T curve of the BaTiO3 film indicates that the oxygen-deficient BaTiO3 is an n-type semiconductor.
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Keywords:
- heterostructure /
- photocarrier injection effect /
- BaTiO3 film
[1] Roy D, Krupanidhi S B 1992 Appl. Phys. Lett. 61 2057
[2] Ring K M, Kavanagh K L 2003 J. Appl. Phys. 94 5982
[3] Hu Z G, Wang G S, Huang Z M, Meng X J, Chu J H 2003 Semicond. Sci. Technol. 18 449
[4] Huang J Q, Hong X L, Han G R, Weng W J, Du P Y 2006 Acta Phys. Sin. 55 3664 (in Chinese) [黄集权, 洪秀兰, 韩高荣, 翁文剑, 杜丕一 2006 55 3664]
[5] Amy F, Wan A S, Kahn A, Walker F J, Mckee R A 2004 J. Appl. Phys. 96 1635
[6] Kim S, Hishita S, Kang Y M, Balk S 1995 J. Appl. Phys. 78 5604
[7] Hunter D, Lord K, Williams T M, Zhang K, Pradhan A K, Sahu D R, Huang J L 2006 Appl. Phys. Lett. 89 092102
[8] Lee M B, Kawasaki M, Yoshimoto M, Koinuma H 1995 Appl. Phys. Lett. 66 1331
[9] Li G Q, Lai P T, Zeng S H, Huang M Q, Liu B Y 1995 Appl. Phys. Lett. 66 2436
[10] Hao L. Z, Xue Q. Z, Gao X L, Li Q, Zheng Q B, Yan K Y 2007 Appl. Phys. Lett. 91 212105
[11] Xing J, Jin K J, Lu H B, He M, Liu G Z, Qiu J, Yang G Z 2008 Appl. Phys. Lett. 92 071113
[12] Wang J Y, Chen C L, Gao G M, Han L A, Jin K X 2006 Acta Phys. Sin. 55 6617 (in Chinese) [王建元, 陈长乐, 高国棉, 韩立安, 金克新 2006 55 6617]
[13] Cardona M 1965 Phys. Rev. A 140 651
[14] Berglund C N, Braun H J 1967 Phys. Rev. 164 790
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[1] Roy D, Krupanidhi S B 1992 Appl. Phys. Lett. 61 2057
[2] Ring K M, Kavanagh K L 2003 J. Appl. Phys. 94 5982
[3] Hu Z G, Wang G S, Huang Z M, Meng X J, Chu J H 2003 Semicond. Sci. Technol. 18 449
[4] Huang J Q, Hong X L, Han G R, Weng W J, Du P Y 2006 Acta Phys. Sin. 55 3664 (in Chinese) [黄集权, 洪秀兰, 韩高荣, 翁文剑, 杜丕一 2006 55 3664]
[5] Amy F, Wan A S, Kahn A, Walker F J, Mckee R A 2004 J. Appl. Phys. 96 1635
[6] Kim S, Hishita S, Kang Y M, Balk S 1995 J. Appl. Phys. 78 5604
[7] Hunter D, Lord K, Williams T M, Zhang K, Pradhan A K, Sahu D R, Huang J L 2006 Appl. Phys. Lett. 89 092102
[8] Lee M B, Kawasaki M, Yoshimoto M, Koinuma H 1995 Appl. Phys. Lett. 66 1331
[9] Li G Q, Lai P T, Zeng S H, Huang M Q, Liu B Y 1995 Appl. Phys. Lett. 66 2436
[10] Hao L. Z, Xue Q. Z, Gao X L, Li Q, Zheng Q B, Yan K Y 2007 Appl. Phys. Lett. 91 212105
[11] Xing J, Jin K J, Lu H B, He M, Liu G Z, Qiu J, Yang G Z 2008 Appl. Phys. Lett. 92 071113
[12] Wang J Y, Chen C L, Gao G M, Han L A, Jin K X 2006 Acta Phys. Sin. 55 6617 (in Chinese) [王建元, 陈长乐, 高国棉, 韩立安, 金克新 2006 55 6617]
[13] Cardona M 1965 Phys. Rev. A 140 651
[14] Berglund C N, Braun H J 1967 Phys. Rev. 164 790
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