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In the paper, we mainly investigate the SOI MOSFET characteristics of high-k gate dielectric with quantum effect. Self-consistent solutions of Schrdinger and Poisson equation are solved in this paper to obtain carrier wave function in the directiong perpendicular to the SiO2/Si interface and energy level distribution. Based on Young model, the threshold voltage and short-channel effects of SOI MOSFET with high-k gate dielectric are simulated and analyzed. The carrier distribution in inversion layer deviates from the surface with the increase of longitudinal electric field, which is caused by quantum effect. It increases the thickness of effective gate oxide and fluctuation of threshold voltage. Meanwhile, high-k gate dielectric materials can reduce the threshold voltage and restrain the DIBL efficiently. The calculation results matching ISE simulation results show that the model has a high-level accuracy, and faster operation ensures the efficiency of the simulation analysis.
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Keywords:
- quantum effect /
- high-K material /
- SOI MOSFET /
- threshold voltage
[1] Li C, Zhuang Y Q, Zhang L, Bao J L 2012 Chin. Phys. B 21 048501
[2] Chaudhry A, Kummer M J 2004 IEEE Trans. on Devices Mater. Rel. 4 99
[3] Coling J P 1993 Silicon-on-Insulator Technology. (Boston: Kluwer Academic publishers) p5
[4] Hirosh Iwai 2004 Solid-State Electronics. 48 497
[5] Meind J D, Chen Q, Davis J A 2001 Science 293 2044
[6] Depas M, Ngarn T, Heyns M M 1996 IEEE Trans. Electron Devices 43 1499
[7] Li J, Liu H X, Li B, Cao L, Yuan B 2010 Acta Phys. Sin. 59 8131 (in Chinese) [李进, 刘红侠, 李斌, 曹磊 2010 59 8131]
[8] Goser K, Glosekotter P, Dienstuhl J 2004 Germany. Springer-Verlag Berlin Heidelberg.
[9] Ma F, Liu H X, Kuang Q W, Fan J B 2012 Chin. Phys. B 21 057304
[10] Onishi K, Choi R, Kang C S, Cho H J, Kim Y H, Nieh R E, Han J, Krishnan S A, Akbar M S, Lee J C 2003 IEEE Trans. Electron Devices. 50 1517
[11] [刘恩科, 朱秉升, 罗晋生 1997 半导体物理学(第4版) (北京: 国防工业出版社) 第53页]
[12] Schwarz S A, Russek S E 1983 IEEE Trans. Electron Devices 30 1634
[13] Yu Z P, Robert W D, Richard A K 2000 IEEE Trans. Electron Devices 47 1819
[14] Bryan A, Biegel, Mario G, Ancana, Conor S, Rafferty 2004 NAS Technical Report. NAS-04008
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[1] Li C, Zhuang Y Q, Zhang L, Bao J L 2012 Chin. Phys. B 21 048501
[2] Chaudhry A, Kummer M J 2004 IEEE Trans. on Devices Mater. Rel. 4 99
[3] Coling J P 1993 Silicon-on-Insulator Technology. (Boston: Kluwer Academic publishers) p5
[4] Hirosh Iwai 2004 Solid-State Electronics. 48 497
[5] Meind J D, Chen Q, Davis J A 2001 Science 293 2044
[6] Depas M, Ngarn T, Heyns M M 1996 IEEE Trans. Electron Devices 43 1499
[7] Li J, Liu H X, Li B, Cao L, Yuan B 2010 Acta Phys. Sin. 59 8131 (in Chinese) [李进, 刘红侠, 李斌, 曹磊 2010 59 8131]
[8] Goser K, Glosekotter P, Dienstuhl J 2004 Germany. Springer-Verlag Berlin Heidelberg.
[9] Ma F, Liu H X, Kuang Q W, Fan J B 2012 Chin. Phys. B 21 057304
[10] Onishi K, Choi R, Kang C S, Cho H J, Kim Y H, Nieh R E, Han J, Krishnan S A, Akbar M S, Lee J C 2003 IEEE Trans. Electron Devices. 50 1517
[11] [刘恩科, 朱秉升, 罗晋生 1997 半导体物理学(第4版) (北京: 国防工业出版社) 第53页]
[12] Schwarz S A, Russek S E 1983 IEEE Trans. Electron Devices 30 1634
[13] Yu Z P, Robert W D, Richard A K 2000 IEEE Trans. Electron Devices 47 1819
[14] Bryan A, Biegel, Mario G, Ancana, Conor S, Rafferty 2004 NAS Technical Report. NAS-04008
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