One-shadow-mask ultralow-voltage indium-tin-oxide thin-film transistors on paper substrates

Mao Yan-Kai; Jiang Jie; Zhou Bin; Dou Wei

doi:10.7498/aps.61.047202

Abstract

A new kind of electric-double-layer indium-tin-oxide (ITO) thin-film transistor (TFT) is fabricated on a paper substrate by one-shadow-mask process. The channel layer can be simultaneously self-assembled between ITO source/drain electrodes by only one shadow mask during RF magnetron sputtering deposition at room temperature. Base on this, we choose microporous SiO2 with electric double layer effect as a gate dielectric, and successfully develop the ultralow-voltage oxide TFT on a paper substrate. The TFT exhibits a good performance with an ultralow operation voltage of 1.5 V, a field-effect mobility of 20.1 cm2/Vs , a subthreshold swing of 188mV/decade, and a large on-off ratio of 5× 105. The full-room-temperature oxide TFT on the paper substrate by one-shadow-mask process shows a lot of advantages, such as low operation voltage, simple device process, low cost, etc. Such a TFT is very promising for the application of low-power and portable electronic products in the future.

Keywords:

Authors and contacts

1.
Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha 410082, China
Funds: Project supported by the National Basic Research Program of China (Grant No. 2007CB310500), and the National Natural Science Foundation of China (Grant No. 10874042).

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Cited By

[1]	RyuMK, Yang S, Park S, Hwang C S, Jeong J K 2009 Appl. Phys. Lett. 95 072104
[2]	Xu T N, Wu H Z, Zhang Y Y, Wang X, Zhu X M, Yuan Z J 2010 Acta Phys. Sin. 59 5018(in Chinese) [徐天宁, 吴惠桢, 张莹莹, 王雄, 朱夏明, 原子健 2010 59 5018]
[3]	Lim W, Douglas E A, Kim S H, Norton D P, Pearton S J, Ren F, Shen H, Chang W H 2008 Appl. Phys. Lett. 93 252103
[4]	Jeong J K, Jeong J H, Yang HW, Park J S, Mo Y G, Kim H D 2007 Appl. Phys. Lett. 91 113505
[5]	Kim I D, Choi Y W, Tuller H L 2005 Appl. Phys. Lett. 87 043509
[6]	Su N C, Wang J S, Chin A 2009 IEEE Electron Device Lett. 30 1317
[7]	Kim J B, Fuentes H C, Kippelen B 2008 Appl. Phys. Lett. 93 242111
[8]	Bartic C, Jansen H, Campitelli A, Borghs S 2002 Org. Electron. 3 65
[9]	Raval H N, Tiwari S P, Navan R R, Mhaisalkar, Rao V R 2009 IEEE Electron Device Lett. 30 484
[10]	Liu Y R, Chen W, Liao R 2010 Acta Phys. Sin. 59 8088 (in Chinese) [刘玉荣, 陈伟, 廖荣 2010 59 8088]
[11]	Kim D H, Cho N G, Kim H G, Kim H S, Hong J M, Kim I D, 2008 Appl. Phys. Lett. 93 032901
[12]	Larsson O, Said E, Berggren M, Crispin X 2009 Adv. Funct. Mater. 19 3334
[13]	Cho J H, Lee J, He Y, Kim B, Lodge P T, Frisbie C D 2008 Adv. Mater. 20 686
[14]	Sun J, Liu H X, Jiang J, Lu A X, Wan Q 2010 J. Mater. Chem. 20 8010
[15]	Lu A X, Sun J, Jiang J, Wan Q 2009 Appl. Phys. Lett. 95 222905

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Catalog

Vol. 61, Issue 4 - 2012-02-20

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