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(1)天津理工学院材料物理研究所,天津300191; (2)中国科学技术大学物理系,合肥230026
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[1] Wang Peng, Wang Chao, Hu Li-Li, Zhang Li-Yan. Effect of SiO2 on the Stark splitting enlargement of Yb3+ in phosphate glass. Acta Physica Sinica, 2016, 65(5): 057801. doi: 10.7498/aps.65.057801 [2] Xia Hui, Yang Wei-Guo. Permeability of nano SiO2 aggregates in concentrated suspension. Acta Physica Sinica, 2016, 65(14): 144203. doi: 10.7498/aps.65.144203 [3] Guo Wen-Hao, Xiao Hui, Men Chuan-Ling. Effects of protons within SiO2 solid-state electrolyte on performances of oxide electric-double-layer thin film transistor. Acta Physica Sinica, 2015, 64(7): 077302. doi: 10.7498/aps.64.077302 [4] He Mei-Lin, Xu Jing-Ping, Chen Jian-Xiong, Liu Lu. Comparison between memory characteristics of MONOS memory with LaON/SiO2 or HfON/SiO2 as dual-tunnel layer. Acta Physica Sinica, 2013, 62(23): 238501. doi: 10.7498/aps.62.238501 [5] Cao Bo, Bao Liang-Man, Li Gong-Ping, He Shan-Hu. Diffusion and interface reaction of Cu and Si in Cu/SiO2/Si (111) systems. Acta Physica Sinica, 2006, 55(12): 6550-6555. doi: 10.7498/aps.55.6550 [6] Zhu Zhen-Hua, Lei Ming-Kai. Structure and photoluminescence of Er3+-doped Al2O3 composite powders by mixing with SiO2. Acta Physica Sinica, 2006, 55(9): 4956-4961. doi: 10.7498/aps.55.4956 [7] Ge Shi-Hui, Liu Chun-Ming, Kou Xiao-Ming, Jiang Li-Xian, Li Bin-Sheng, Li Cheng-Xian. Study on the structure and transport properties of discontinuous Co/SiO2 multilayers. Acta Physica Sinica, 2004, 53(10): 3555-3559. doi: 10.7498/aps.53.3555 [8] Ma Zhong-Yuan, Huang Xin-Fan, Zhu Da, Li Wei, Chen Kun-Ji, Feng Duan. Photoluminescence from a-Si:H/SiO2 multilayers fabricated using in situ layer by layer plasma oxidation. Acta Physica Sinica, 2004, 53(8): 2746-2750. doi: 10.7498/aps.53.2746 [9] Chen Chang-Yong, Chen Wei-De, Wang Yong-Qian, Song Shu-Fang, Xu Zhen-Jia. Influence of coupling between Er3+, nc-Si and nonradiative centers on photoluminescence from Er3+-doped nc-Si/SiO2 films. Acta Physica Sinica, 2003, 52(3): 736-739. doi: 10.7498/aps.52.736 [10] Liu Ming, Yi Li-Xin, Teng Feng, Xu Zheng, Xu Xu-Rong. Mutual enhancement of cathodoluminescence and organic electroluminescence in SiO2/C9-PPV heterogeneous junction. Acta Physica Sinica, 2003, 52(4): 1013-1018. doi: 10.7498/aps.52.1013 [11] . . Acta Physica Sinica, 2002, 51(2): 430-433. doi: 10.7498/aps.51.430 [12] ZHANG XIAO-QING, G.M.SESSLER, XIA ZHONG-FU, ZHANG YE-WEN. CHARGE STORAGE AND TRANSPORTATION IN DOUBLE LAYERS OF Si3N4/SiO2 ELECTRET FILM BASED ON Si SUBSTRATE. Acta Physica Sinica, 2001, 50(2): 293-298. doi: 10.7498/aps.50.293 [13] ZHU KAI-GUI, SHI JIAN-ZHONG, SHAO QING-YI. RAMAN SCATTERING FROM InAs NANOCRYSTALS EMBEDDED IN SiO2 THIN FILMS. Acta Physica Sinica, 2000, 49(11): 2304-2306. doi: 10.7498/aps.49.2304 [14] SUN YONG-KE, HENG CHENG-LIN, WANG SUN-TAO, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN -HUA. ELECTROLUMINESENCE FROM Au/(SiO2/Si/SiO2) NANOSCALE DOUBLE -BARRIER/n+-Si STRUCTURE. Acta Physica Sinica, 2000, 49(7): 1404-1408. doi: 10.7498/aps.49.1404 [15] HAN DA-XING, WANG WAN-LU, ZHANG ZHI. MECHANISM OF ELECTROLUMINESCENCE FROM a-Si:H AND STUDIES OF DEFECT ENERGY DISTRIBUTION IN INTRINSIC LAYER OF a-Si:H SOLAR CELLS BY ELECTROLUMINESCENCE SPECTRA. Acta Physica Sinica, 1999, 48(8): 1484-1490. doi: 10.7498/aps.48.1484 [16] LOU ZHI-DONG, XU ZHENG, XU CHUN-XIANG, YU LEI, TENG FENG, XU XU-RONG. HIGH-FIELD ELECTRON TRANSPORT OF AMORPHOUS SiO2 AS ACCELERATING LAYER IN THE LAYERED OPTIMIZATION TFEL. Acta Physica Sinica, 1998, 47(1): 139-145. doi: 10.7498/aps.47.139 [17] ZHANG YA-XIONG, LI AN-PING, CHEN KAI-MAO, ZHANG BO-RUI, SUN YUN-XI, QIN GUO-GANG, MA ZHEN-CHANG, ZONG WAN-HUA. ELECTROLUMINESCENCE FROM NANOSCALE Si-PARTICLES EMBEDDED SiO2 FILMS DEPOSITED ON n+-Si AND p-Si SUBSTRATES. Acta Physica Sinica, 1997, 46(5): 1011-1014. doi: 10.7498/aps.46.1011 [18] HE ZHEN-HONG, CHEN KUN-JI, FENG DUAN. PREPARATION OF nc-Ge EMBEDDED IN SiO2 MATRIX AND OBSERVATION OF VISIBLE PHOTOLUMINESCENCE. Acta Physica Sinica, 1997, 46(6): 1153-1160. doi: 10.7498/aps.46.1153 [19] Shi Wang-Zhou, Yao Wei-Guo, Qi-Zhen-Zhong, He Yi-Zhen. . Acta Physica Sinica, 1995, 44(7): 1172-1176. doi: 10.7498/aps.44.1172 [20] LIU ZHI-HONG, CHEN PU-SHENG, LIU BAI-YONG, CHENG YAO-ZONG. BREAKDOWN CHARACTERISTICS OF RAPID THERMAL NITRIDED SiO2 FILM OF 150? THICKNESS. Acta Physica Sinica, 1991, 40(1): 154-160. doi: 10.7498/aps.40.154
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Publishing process
- Received Date:
09 May 1994
- Published Online:
20 July 1995
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