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The effect of an n-type AlGaN layer on the physical properties of dual-wavelength light-emitting diode (LED) is investigated numerically. The simulation results show that compared with the conventional p-type AlGaN electron-blocking layer (EBL), the n-type AlGaN layer can improve the distribution of electrons and holes more uniformly and realize the radiation balance between electrons and holes in the quantum wells, and further reduce the efficiency dro of dual-blue wavelength LED at high current. In addition, the spontaneous emission rate of two kinds of quantum wells can be adjusted through the control of Al composition. It can be found from the results that the emission spectrum of dual-blue wavelength LED is more stable at low current with an Al composition of 0.16, while the emission spectrum is more stable at high current with an Al composition of 0.12.
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Keywords:
- n-AlGaN /
- p-AlGaN /
- mixture multi-quantum wells /
- dual-blue wavelength
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[2] Yamada M, Naitou T, Izumo K, Tamaki H, Murazaki Y, Kameshima M, Mukai T 2003 Jpn. J. Appl. Phys. 42 L20
[3] Sheu J K, Chang S J, Kuo C H, Su Y, Wu L W, Lin Y C, Lai W C, Tsai J M, Chi G C, Wu R K 2003 IEEE Photonics Techol. Lett. 1518
[4] Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 595002 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 59 5002]
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[8] Wang X H, Guo L W, Jia H Q, Xing Z G, Wang Y, Pei X J, Zhou JM, Chen H 2009 Appl. Phys. Lett. 94 1913
[9] Shi J W, Chen C C, Wang C K, Lin C S, Sheu J K, Lai W C, KuoC H, Tun C J, Yang T H, Tsao F C, Chyi J I 2008 IEEE PhotonicsTechnol. Lett. 20 449
[10] Park I K, Kim J Y, Kwon M K, Cho C Y, Lim J H, Park S J 2008Appl. Phys. Lett. 92 091110
[11] Mirhosseini R, Schubert M F, Chhajed S, Cho J, Kim J K, SchubertE F 2009 Opt. Express 17 10806
[12] Chen X W, Zhang Y, Li S T, Yan Q R, Zheng S W, He M, Fan GH 2011 Status Solid A 208 1972
[13] David A, Grundmann M J, Kaeding J F, Gardner N F, MihopoulosT G, Krames M R 2008 Appl. Phys. Lett. 92 053502
[14] Vurgaftman I, Meyer J R, Ram-Mohan L R 2001 J. Appl. Phys.89 5815
[15] Fiorentini V, Bernardini F, Amacher O 2002 Appl. Phys. Lett. 801204
[16] Bernardini F 2007 "Spontaneous and Piezoelectric Polarization:Basic Theory vs. Practical Recipes" in Nitride Semiconductor Devices:Principles and Simulation (Weinheim: WILEY-VCH VerlagGmbH & Co.KGaA) p49
[17] Gu X L, Guo X, Wu D, Xu L H, Liang T, Guo J, Shen G D 2007Acta Phys. Sin. 56 4977 (in Chinese) [顾晓玲, 郭霞, 吴迪, 徐丽华, 梁庭, 郭晶, 沈光地 2007 56 4977]
[18] Renner F, Kiesel P, Doehler G, Kneissl M A, Van de Walle C G, Jpohnson N M 2002 Appl. Phys. Lett. 81 490
[19] Zhang H, Miller E J, Yu E T, Poblenz C, Speck J S 2004 Appl.Phys. Lett. 84 4644
[20] Heikman S, Keller S, Wu Y, Speck J S, Denbaars S P, Mishra U K2003 J. Appl. Phys. 93 10114
[21] Mao Q H, Jiang F Y, Cheng H Y, Zheng C D 2010 Acta Phys. Sin.59 8078 (in Chinese) [毛清华, 江风益, 程海英, 郑畅达 2010 59 8078]
[22] Kuo Y K, Horng S H, Yen S H, Tsai M C, Huang M F 2009 Appl.Phys. A 98 509
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[1] Nakamura S, Fasol G 1997 The Blue Laser Diode: GaN BasedLight Emitters and Lasers (Berlin: Springer) p216
[2] Yamada M, Naitou T, Izumo K, Tamaki H, Murazaki Y, Kameshima M, Mukai T 2003 Jpn. J. Appl. Phys. 42 L20
[3] Sheu J K, Chang S J, Kuo C H, Su Y, Wu L W, Lin Y C, Lai W C, Tsai J M, Chi G C, Wu R K 2003 IEEE Photonics Techol. Lett. 1518
[4] Xue Z Q, Huang S R, Zhang B P, Chen C 2010 Acta Phys. Sin. 595002 (in Chinese) [薛正群, 黄生荣, 张保平, 陈朝 2010 59 5002]
[5] Ozden I, Makarona E, Nurmikko A V, Takeuchi T, KramesM2001Appl. Phys. Lett. 79 2532
[6] Chen C H, Chang S J, Su Y K 2003 Phys. Stat. Sol. 7 2257
[7] Wang X H, Jia H Q, Guo L W, Xing Z G, Wang Y, Pei X J, Zhou JM, Chen H 2007 Appl. Phys. Lett. 91 1912
[8] Wang X H, Guo L W, Jia H Q, Xing Z G, Wang Y, Pei X J, Zhou JM, Chen H 2009 Appl. Phys. Lett. 94 1913
[9] Shi J W, Chen C C, Wang C K, Lin C S, Sheu J K, Lai W C, KuoC H, Tun C J, Yang T H, Tsao F C, Chyi J I 2008 IEEE PhotonicsTechnol. Lett. 20 449
[10] Park I K, Kim J Y, Kwon M K, Cho C Y, Lim J H, Park S J 2008Appl. Phys. Lett. 92 091110
[11] Mirhosseini R, Schubert M F, Chhajed S, Cho J, Kim J K, SchubertE F 2009 Opt. Express 17 10806
[12] Chen X W, Zhang Y, Li S T, Yan Q R, Zheng S W, He M, Fan GH 2011 Status Solid A 208 1972
[13] David A, Grundmann M J, Kaeding J F, Gardner N F, MihopoulosT G, Krames M R 2008 Appl. Phys. Lett. 92 053502
[14] Vurgaftman I, Meyer J R, Ram-Mohan L R 2001 J. Appl. Phys.89 5815
[15] Fiorentini V, Bernardini F, Amacher O 2002 Appl. Phys. Lett. 801204
[16] Bernardini F 2007 "Spontaneous and Piezoelectric Polarization:Basic Theory vs. Practical Recipes" in Nitride Semiconductor Devices:Principles and Simulation (Weinheim: WILEY-VCH VerlagGmbH & Co.KGaA) p49
[17] Gu X L, Guo X, Wu D, Xu L H, Liang T, Guo J, Shen G D 2007Acta Phys. Sin. 56 4977 (in Chinese) [顾晓玲, 郭霞, 吴迪, 徐丽华, 梁庭, 郭晶, 沈光地 2007 56 4977]
[18] Renner F, Kiesel P, Doehler G, Kneissl M A, Van de Walle C G, Jpohnson N M 2002 Appl. Phys. Lett. 81 490
[19] Zhang H, Miller E J, Yu E T, Poblenz C, Speck J S 2004 Appl.Phys. Lett. 84 4644
[20] Heikman S, Keller S, Wu Y, Speck J S, Denbaars S P, Mishra U K2003 J. Appl. Phys. 93 10114
[21] Mao Q H, Jiang F Y, Cheng H Y, Zheng C D 2010 Acta Phys. Sin.59 8078 (in Chinese) [毛清华, 江风益, 程海英, 郑畅达 2010 59 8078]
[22] Kuo Y K, Horng S H, Yen S H, Tsai M C, Huang M F 2009 Appl.Phys. A 98 509
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