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AlGaN/GaN量子阱中子带的Rashba自旋劈裂和子带间自旋轨道耦合作用研究

李明 张荣 刘斌 傅德颐 赵传阵 谢自力 修向前 郑有炓

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AlGaN/GaN量子阱中子带的Rashba自旋劈裂和子带间自旋轨道耦合作用研究

李明, 张荣, 刘斌, 傅德颐, 赵传阵, 谢自力, 修向前, 郑有炓

Study of Rashba spin splitting and intersubband spin-orbit coupling effect in AlGaN/GaN quantum wells

Li Ming, Zhang Rong, Liu Bin, Fu De-Yi, Zhao Chuan-Zhen, Xie Zhi-Li, Xiu Xiang-Qian, Zheng You-Dou
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  • 首先把本征值方程投影到导带的子空间中, 进而得到AlGaN/GaN量子阱中第一、二子带的Rashba自旋劈裂系数(1,2)和子带间自旋-轨道耦合系数12. 然后自恰求解薛定谔方程和泊松方程计算了不同栅压的量子阱中的1,2和12, 并分别讨论了量子阱阱层、左右异质结界面和垒层对它们的贡献. 结果表明可以通过栅压来调节自旋-轨道耦合系数, 子带间自旋轨道耦合系数12比Rashba自旋劈裂系数1,2小, 但基本在同一数量级.
    Rashba spin splitting coefficients for the first two subbands1,2 and intersubband spin-orbit coupling coefficient 12 are obtained by projecting the characteristic equation into the subspace of conduction band. Then Schrdinger and the Poisson equations are solved self-consistently to calculate1,2 and 12 under different gate voltages. Then contributions to the spin-orbit coupling coefficients from the well, the left and the right heterointerfaces and the left and the right barriers of the quantum well are discussed. Resulsts show that the spin-orbit coupling coefficient can be modulated by the gate voltage, and the intersubband spin-orbit coupling coefficients calculated here are a little smaller than the Rashba coefficients1,2, but they are basically of the same order.
    • 基金项目: 国家自然科学基金(批准号: 60990311, 60721063, 60906025, 60936004), 国家重点基础研究发展计划 (批准号: 2011CB301900), 国家高技术研究发展计划(批准号: 2009AA03A198), 江苏省自然科学基金(批准号: BK2008019, BK2009255, BK2010178)和南京大学扬州光电研究院研发基金资助的课题.
    • Funds: Project supported by the National Natural Science Foundation of China (Grant Nos?60990311, 60721063, 60906025, 60936004), the State Key Development Program for Basic Research of China (Grant No?2011CB301900), the State Development Program for Research on Advanced technology of China (Grant No. 2009AA03A198), the Natural Science Foundation of Jiangsu Province (Grant Nos?BK2008019, BK2009255, BK2010178), and the Research Foundation for School of Yangzhou Photonic and Electronic research of Nanjing University.
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    Ikai Lo, Tsai J K, Yao W J, Ho P C, Tu L W, Chang T C, Elhamri S, Mitchel W C, Hsieh K Y, Huang J H, Huang H L, Tsai W C 2002 Phys. Rev. B 65 R161306

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    Tsubaki, Maeda N, Saitoh T, Kobayashi N 2002 Appl. Phys. Lett. 80 3126

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  • [1]

    Zutic I, fabian J, Das Sarma S 2004 Rev. Mod. Phys. 76 323

    [2]

    Ikai Lo, Gau M H, Tsai J K, Chen Y L, Chang Z J, Wang W T, Chiang J C, Aggerstam T, Lourdudoss S 2007 Phys. Rev. B 75 245307

    [3]

    He X W, Shen B, Tang Y Q, Tang N, Yin C M, Xu F J, Yang Z J, Zhang G y, Chen Y H, Tang C G, Wang Z G 2007 Appl. Phys. Lett. 91 071912

    [4]

    Litvinov V I 2003 Phys. Rev. B 68 155314

    [5]

    Pfeffer P, Zawadzki W 1999 Phys. Rev. B 59 5312

    [6]

    Weber W, Ganichev S D, Danilov S N, Weiss D, Prettl W, Kvon N D, Bel’kov V V Golub L E, Cho H I, Lee J H 2005 Appl. Phys. Lett. 87 262106

    [7]

    Ganichev S D, Bel’kov V V, Golub L E, Ivchenko E L, Schneider P, Giglberger S, Eroms J, De Boeck J, Borghs G, Wegscheider W, Weiss D, Prettl W 2004 Phys. Rev. Lett. 92, 256601

    [8]

    Chao Z J, Gui Y S, Shu X Z, Dai N, Guo S L, Chu J H 2004 Acta Phys. Sin. 53 1186 (in Chinese) [仇志军, 桂永胜, 疏小舟, 戴宁, 郭少令, 禇君浩 2004 53 1186]

    [9]

    Dresselhaus G 1955 Phys. Rev. 100 580

    [10]

    Bychkov Y A, Rashba E I 1984 J. Phys. C 17 6039

    [11]

    Sun H Z, Zhang P, Duang S Q, Zhao X G 2006 Chin. Phys. 15 3019

    [12]

    Yan Y Z, Hu L B 2010 Chin. Phys. B 19 047203

    [13]

    Li Y G, Li B Z 2005 Chin. Phys. 14 1021

    [14]

    Wolf S A, Awschalom D D, Buhrman R A, Daughton J M, von Molnár S, Roukes M L, Chtchelkanova A Y, Treger D M 2001 Science 294 1488

    [15]

    Awschalom D, Loss D, Samarth N 2002 Semiconductor Spintronics and Quantum Computation (Berlin Springer) p1–3

    [16]

    Wang X H, An X T, Liu J J 2009 Chin. Phys. B 18 749

    [17]

    Sheng W, Wang Y, Zhuo G H 2007 Chin. Phys. 16 533

    [18]

    Tang N, Shen B, Zheng Z W, Liu J, Chen D J, Lu J, Zhang R, Shi Y, Zheng Y D, Gui Y S, Jiang C P, Qiu Z J, Guo S L, Chu J H, Hoshino K, Someya T, Arakawa Y 2003 J. Appl. Phys. 94 5420

    [19]

    Zheng Z W, Shen B, Jiang C P, Gui Y S, Someya Y, Zhang R, Shi Y, Zheng Y D, Guo S L, Chu J H, Arakawa Y 2003 J. Appl. Phys. 93 1651

    [20]

    Winkler R 2003 Spin-Orbit coupling effects in two-dimensional electron and hole systems (Berlin Springer) p77–86

    [21]

    Calsaverini R S, John Schliemann, Esmerindo Bernardes, Carlos Egues J, Daniel Loss 2008 Phys. Rev. B 78 155313

    [22]

    Esmerindo Bernardes, Calsaverini R S, Esmerindo Bernardes, Carlos Egues J, Daniel Loss 2007 Phys. Rev. Lett. 99 076603

    [23]

    Jaroslav Fabian, Alex Matos-Abiaguea, Christian Ertlera, Peter Stano, Igoř Zuti′c 2007 Acta Physica Slovaca 57 565

    [24]

    Chuang S L, Chang C S 1996 Phys. Rev. B 54 2491

    [25]

    Litvinov V I 2006 Appl. Phys. Lett. 89 222108

    [26]

    Li M, Zhang R, Zhang Z, Yan Y S, Liu B, Fu D, Zhao C J, Xie Z L, Xiu X Q, Zheng Y D 2010 Superlattice and Microstructure 47 522

    [27]

    Li M, Zhang R, Zhang Z, Yan W S, Liu B, Fu D, Zhao C Z, Xie Z L, Xiu X Q, Zheng Y D May 2009 13th International Workshop on Computational Electronics p230–233

    [28]

    Li M, Zhang R, Zhang Z, Liu B, Fu D Y, Zhao C Z, Xie Z L, Xiu X Q, Zheng Y D 2011 Phys. Status Solidi B 248 187

    [29]

    Tan I H, Snider G L, Chang L D, Hu E L 1990 J. Appl. Phys. 68 4071

    [30]

    Kumagai M, Chuang S L, Ando H 1998 Phys. Rev. B 57 15303

    [31]

    Suzuki M, Uenoyama T, Yanase A 1995 Phys. Rev. B 52 8132

    [32]

    Ikai Lo, Tsai J K, Yao W J, Ho P C, Tu L W, Chang T C, Elhamri S, Mitchel W C, Hsieh K Y, Huang J H, Huang H L, Tsai W C 2002 Phys. Rev. B 65 R161306

    [33]

    Tsubaki, Maeda N, Saitoh T, Kobayashi N 2002 Appl. Phys. Lett. 80 3126

    [34]

    Schmult, Manfra M J, Punnoose A, Sergent A M, Baldwin K W, Molnar R J 2006 Phys. Rev. B 74 033302

    [35]

    Koga T, Nitta J, Akazaki T, Takayanagi H 2002 Phys. Rev. Lett. 89 046801

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出版历程
  • 收稿日期:  2010-07-18
  • 修回日期:  2011-03-29
  • 刊出日期:  2012-01-05

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