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The capacitance-voltage characteristics and the variations of threshold voltage of strained Si1-xGe x channel p-MOSFET with Ge fraction are investigated via two-dimansional numerical simulation. The results indicate that with the increase of Ge fraction, the subthreshold current increases remarkably, and that the gate capacitance changes significantly when the device is in inversion, moreover, the Ge fraction dependence of the variation of threshold voltage is linear. Combining the change of the Si1-xGex channel length with the relevant physical model, the mobility of holes in channel is demonstrated to be inversely proportional to the derivative of the total resistances with respect to the channel length in a weak applied field.
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Keywords:
- strained Si1-xGex channel /
- p-MOSFET /
- hole mobility /
- gate capacitance
[1] Nayak D K, Woo J C S, Park J S, Wang K L, Macwilliams K P 1991 IEEE Electron Device Letters 12 154
[2] Li J, Liu H X, Li B, Gao L, Yuan B 2010 Chin. Phys. B 19 107301
[3] Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X, Shu B 2010 Chin. Phys. B 19 37201
[4] Du G, Liu X Y, Xia Z L, Yang J F, Han R Q, 2010 Chin. Phys. B 19 57304
[5] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan X R 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、崔晓英、胡辉勇、戴显英、宣荣喜 2007 56 3504]
[6] Bindu B, DasGupta N, DasGupta A 2006 IEEE Trans. Electron Devices 53 1411
[7] Lukic P M, Ramovic R M, Sasic R M 2006 25th International Conference on Microelectronics, Belgrade, May 14—17, 2006 p472
[8] Fiorenza J G, Park J S, Lochtefeld A 2008 IEEE Trans. Electron Devices 55 640
[9] Lee S H, Majhi P, Jungwoo O, Sassman B, Young C, Bowonder A, Loh W Y, Choi K J, Cho B J, Lee H D, Kirsch P, Harris H R, Tsai W, Satta S, Tseng H H, Banerjee S K, Jammy R 2008 IEEE Electron Device Letters 29 1017
[10] Yang R, Luo J S, Tub J, Zhang R Z 2004 Microelectronics Journal 35 145
[11] Shinobu T, Masao S, Junichi M, Toshiaki T 2008 Electrical Engineering in Japan 165 1079
[12] Collaert N, Verheyen P, Meyer K D, Loo R, Caymax M 2002 European Solid-State Device Research Conference , Italy, 24—26 September, 2002 p263
[13] Dai Y H, Chen J N, Ke D M, Sun J E 2005 Acta Phys. Sin. 54 897(in Chinese) [代月花、陈军宁、柯导明、 孙家讹 2005 54 897]
[14] Gao J X, Zhang Y M, Tang X Y, Zhang Y M 2006 Acta Phys. Sin. 55 2992(in Chinese) [郜锦侠、张义门、汤晓燕、 张玉明 2006 55 2992]
[15] Zainuddin A, Haque A 2005 IEEE Trans. Electron Devices 52 2812
[16] Tezuka T, Sugiyama N, Mizuno T, Takagi S I 2003 IEEE Trans. Electron Devices 50 1328
[17] Rim K, Narasilha S, Longstreet M, Mocuta A, Cai J 2002 International Electron Devices Meeting, San Francisco, December 8—11, 2002 p43
[18] Flachowsky S, Wei A, Herrmann T, Illgen R, Horstmann M, Richter R, Salz H, Klix W, Stenzel R 2008 Materials Science and Engineering B 154 98
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[1] Nayak D K, Woo J C S, Park J S, Wang K L, Macwilliams K P 1991 IEEE Electron Device Letters 12 154
[2] Li J, Liu H X, Li B, Gao L, Yuan B 2010 Chin. Phys. B 19 107301
[3] Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X, Shu B 2010 Chin. Phys. B 19 37201
[4] Du G, Liu X Y, Xia Z L, Yang J F, Han R Q, 2010 Chin. Phys. B 19 57304
[5] Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan X R 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、崔晓英、胡辉勇、戴显英、宣荣喜 2007 56 3504]
[6] Bindu B, DasGupta N, DasGupta A 2006 IEEE Trans. Electron Devices 53 1411
[7] Lukic P M, Ramovic R M, Sasic R M 2006 25th International Conference on Microelectronics, Belgrade, May 14—17, 2006 p472
[8] Fiorenza J G, Park J S, Lochtefeld A 2008 IEEE Trans. Electron Devices 55 640
[9] Lee S H, Majhi P, Jungwoo O, Sassman B, Young C, Bowonder A, Loh W Y, Choi K J, Cho B J, Lee H D, Kirsch P, Harris H R, Tsai W, Satta S, Tseng H H, Banerjee S K, Jammy R 2008 IEEE Electron Device Letters 29 1017
[10] Yang R, Luo J S, Tub J, Zhang R Z 2004 Microelectronics Journal 35 145
[11] Shinobu T, Masao S, Junichi M, Toshiaki T 2008 Electrical Engineering in Japan 165 1079
[12] Collaert N, Verheyen P, Meyer K D, Loo R, Caymax M 2002 European Solid-State Device Research Conference , Italy, 24—26 September, 2002 p263
[13] Dai Y H, Chen J N, Ke D M, Sun J E 2005 Acta Phys. Sin. 54 897(in Chinese) [代月花、陈军宁、柯导明、 孙家讹 2005 54 897]
[14] Gao J X, Zhang Y M, Tang X Y, Zhang Y M 2006 Acta Phys. Sin. 55 2992(in Chinese) [郜锦侠、张义门、汤晓燕、 张玉明 2006 55 2992]
[15] Zainuddin A, Haque A 2005 IEEE Trans. Electron Devices 52 2812
[16] Tezuka T, Sugiyama N, Mizuno T, Takagi S I 2003 IEEE Trans. Electron Devices 50 1328
[17] Rim K, Narasilha S, Longstreet M, Mocuta A, Cai J 2002 International Electron Devices Meeting, San Francisco, December 8—11, 2002 p43
[18] Flachowsky S, Wei A, Herrmann T, Illgen R, Horstmann M, Richter R, Salz H, Klix W, Stenzel R 2008 Materials Science and Engineering B 154 98
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