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Using pulsed laser deposition, multiferroic La2/3Sr1/3MnO3(LSMO)/BaTiO3(BTO) composite films are deposited on LaAlO3 (LAO)(001) substrate. X-ray diffraction results show that LSMO and BTO films exhibit only (001) orientation. Film smoothness is verified by their low root-mean-square surface roughness values as 1.4 nm from atomic force microscope study. The magnetic and the electric properties of these composite films are investigated. Furthermore, the variations of resistivity and metal-insulator transition temperature TMI of LSMO, induced by the external electric field, are studied. The resisitivity is reduced while the TMI is enhanced for hole accumulation state which is induced by negative electric field across BTO layer. In contrast, the resistivity is enhanced while the TMI is reduced for hole depletion state, which shows coupling between magnetic and electric order parameters, i.e., there is a magnetoelectric effect induced by electric field.
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Keywords:
- magnetoelectric effect /
- ferromagnetic/ferroelectric heterostructure /
- pulsed laser deposition
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[2] Spaldin N A, Fiebig M 2005 Science 309 391
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[24] Wan J G, Wang X W, Wu Y J, Zeng M, Wang Y, Jiang H, Zhou W Q, Wang G H, Liu J M 2005 Appl. Phys. Lett. 86 122501
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[34] [35] Jang J W, Chung S J, Cho W J, Hahn T S, Choi S S 1997 J. Appl. Phys. 81 6322
[36] [37] Lee Y P, Park S Y, Hyun Y H, Kim J B, Prokhorov V G, Komashko V A, Svetchnikov V L 2006 Phys. Rev. B 73 224413
[38] [39] Banach G, Tyer R, Temmerman W M 2004 J. Magn. Magn. Mater. 272 1963
[40] [41] Martin C, Maignan A, Hervieu M, Raveau B 1999 Phys. Rev. B 60 12191
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[1] Eerenstein W, Mathur N D, Scott J F 2006 Nature 442 759
[2] Spaldin N A, Fiebig M 2005 Science 309 391
[3] [4] Hill N A 2000 J. Phys. Chem. B 104 6694
[5] [6] Avellaneda M, Harshe G 1994 J. Intell. Mater. Syst. Struct. 5 501
[7] [8] [9] Bichurin M I, Petrov V M, Srinivasan G 2002 J. Appl. Phys. 92 7681
[10] [11] Zhou J P, He H C, Shi Z, Nan C W 2006 Appl. Phys. Lett. 88 013111
[12] [13] Chu Y H, Martin L W, Holcomb M B, Gajek M, Han S J, He Q, Balke N, Yang C H, Lee D, Hu W, Zhan Q, Yang P L, Fraile-Rodriguez A, Scholl A, Wang S X, Ramesh R 2008 Nat. Mater. 7 478
[14] Rondinelli J M, Stengel M, Spaldin N A 2008 Nat. Nanotech. 3 46
[15] [16] [17] Wu Y J, Wan J G, Huang C F, Weng Y Y, Zhao S F, Liu J M, Wang G H 2008 Appl. Phys. Lett. 93 192915
[18] Zheng H, Wang J, Lofland S E, Ma Z, Mohaddes-Ardabili L, Zhao T, Salamanca-Riba L, Shinde S R, Ogale S B, Bai F, Viehland D, Jia Y, Schlom D G, Wuttig M, Roytburd A, Ramesh R 2004 Science 303 661
[19] [20] Zheng H, Zhan Q, Zavaliche F, Sherburne M, Straub F, Cruz M P, Chen L Q, Dahmen U, Ramesh R 2006 Nano Lett. 6 1401
[21] [22] [23] Zhong C G, Jiang Q, Fang J H, Jiang X F, Luo L J 2009 Acta Phys. Sin. 58 7227 (in Chinese) [仲崇贵、蒋 青、方靖淮、江学范、罗礼进 2009 58 7227]
[24] Wan J G, Wang X W, Wu Y J, Zeng M, Wang Y, Jiang H, Zhou W Q, Wang G H, Liu J M 2005 Appl. Phys. Lett. 86 122501
[25] [26] Ma J, Shi Z, Lin Y H, Nan C W 2009 Acta Phys. Sin. 58 5852 (in Chinese) [马 静、施 展、林元华、南策文 2009 58 5852]
[27] [28] Zhang Y, Deng C Y, Ma J, Lin Y H, Nan C W 2008 Chin. Phys. B 17 3910
[29] [30] [31] Zheng H, Yang C T 2010 Acta Phys. Sin. 59 5055 (in Chinese) [郑 鸿、杨成韬 2010 59 5055]
[32] [33] Dussan S, Kumar A, Scott J F, Katiyar R S 2010 Appl. Phys. Lett. 96 072904
[34] [35] Jang J W, Chung S J, Cho W J, Hahn T S, Choi S S 1997 J. Appl. Phys. 81 6322
[36] [37] Lee Y P, Park S Y, Hyun Y H, Kim J B, Prokhorov V G, Komashko V A, Svetchnikov V L 2006 Phys. Rev. B 73 224413
[38] [39] Banach G, Tyer R, Temmerman W M 2004 J. Magn. Magn. Mater. 272 1963
[40] [41] Martin C, Maignan A, Hervieu M, Raveau B 1999 Phys. Rev. B 60 12191
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