Ge组分对应变Si1-xGe x 沟道p-MOSFET电学特性影响

杨洲; 王茺; 王洪涛; 胡伟达; 杨宇

doi:10.7498/aps.60.077102

摘要

利用二维数值模拟方法,研究了不同Ge组分应变Si1-xGe x 沟道p-MOSFET的电容-电压特性以及阈值电压的变化情况.计算结果表明:提高应变Si1-xGe x 沟道层中的Ge组分,器件亚阈值电流明显增大;栅电容在器件进入反型状态时产生显著变化;阈值电压的改变量与Ge组分基本成线性关系.通过改变Si1-xGe x 沟道的长度,并结

关键词:

The capacitance-voltage characteristics and the variations of threshold voltage of strained Si1-xGe x channel p-MOSFET with Ge fraction are investigated via two-dimansional numerical simulation. The results indicate that with the increase of Ge fraction, the subthreshold current increases remarkably, and that the gate capacitance changes significantly when the device is in inversion, moreover, the Ge fraction dependence of the variation of threshold voltage is linear. Combining the change of the Si1-xGex channel length with the relevant physical model, the mobility of holes in channel is demonstrated to be inversely proportional to the derivative of the total resistances with respect to the channel length in a weak applied field.

Keywords:

作者及机构信息

(1)云南大学光电信息材料研究所,昆明 650091; (2)中国科学院上海技术物理研究所,红外物理国家重点实验室,上海 200083

基金项目: 国家自然科学基金(批准号:10964016, 60567001),教育部科学技术研究重点项目(批准号:210207)和云南省自然基金重点项目(批准号:2008CC012)资助的课题.

Authors and contacts

(1)Institute for Optoelectronic Information Materials, Yunnan University, Kunming 650091, China; (2)National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

参考文献

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[7]	Lukic P M, Ramovic R M, Sasic R M 2006 25th International Conference on Microelectronics, Belgrade, May 14—17, 2006 p472
[8]	Fiorenza J G, Park J S, Lochtefeld A 2008 IEEE Trans. Electron Devices 55 640
[9]	Lee S H, Majhi P, Jungwoo O, Sassman B, Young C, Bowonder A, Loh W Y, Choi K J, Cho B J, Lee H D, Kirsch P, Harris H R, Tsai W, Satta S, Tseng H H, Banerjee S K, Jammy R 2008 IEEE Electron Device Letters 29 1017
[10]	Yang R, Luo J S, Tub J, Zhang R Z 2004 Microelectronics Journal 35 145
[11]	Shinobu T, Masao S, Junichi M, Toshiaki T 2008 Electrical Engineering in Japan 165 1079
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施引文献

[1]	Nayak D K, Woo J C S, Park J S, Wang K L, Macwilliams K P 1991 IEEE Electron Device Letters 12 154
[2]	Li J, Liu H X, Li B, Gao L, Yuan B 2010 Chin. Phys. B 19 107301
[3]	Qin S S, Zhang H M, Hu H Y, Dai X Y, Xuan R X, Shu B 2010 Chin. Phys. B 19 37201
[4]	Du G, Liu X Y, Xia Z L, Yang J F, Han R Q, 2010 Chin. Phys. B 19 57304
[5]	Zhang H M, Cui X Y, Hu H Y, Dai X Y, Xuan X R 2007 Acta Phys. Sin. 56 3504 (in Chinese) [张鹤鸣、崔晓英、胡辉勇、戴显英、宣荣喜 2007 56 3504]
[6]	Bindu B, DasGupta N, DasGupta A 2006 IEEE Trans. Electron Devices 53 1411
[7]	Lukic P M, Ramovic R M, Sasic R M 2006 25th International Conference on Microelectronics, Belgrade, May 14—17, 2006 p472
[8]	Fiorenza J G, Park J S, Lochtefeld A 2008 IEEE Trans. Electron Devices 55 640
[9]	Lee S H, Majhi P, Jungwoo O, Sassman B, Young C, Bowonder A, Loh W Y, Choi K J, Cho B J, Lee H D, Kirsch P, Harris H R, Tsai W, Satta S, Tseng H H, Banerjee S K, Jammy R 2008 IEEE Electron Device Letters 29 1017
[10]	Yang R, Luo J S, Tub J, Zhang R Z 2004 Microelectronics Journal 35 145
[11]	Shinobu T, Masao S, Junichi M, Toshiaki T 2008 Electrical Engineering in Japan 165 1079
[12]	Collaert N, Verheyen P, Meyer K D, Loo R, Caymax M 2002 European Solid-State Device Research Conference , Italy, 24—26 September, 2002 p263
[13]	Dai Y H, Chen J N, Ke D M, Sun J E 2005 Acta Phys. Sin. 54 897(in Chinese) [代月花、陈军宁、柯导明、孙家讹 2005 54 897]
[14]	Gao J X, Zhang Y M, Tang X Y, Zhang Y M 2006 Acta Phys. Sin. 55 2992(in Chinese) [郜锦侠、张义门、汤晓燕、张玉明 2006 55 2992]
[15]	Zainuddin A, Haque A 2005 IEEE Trans. Electron Devices 52 2812
[16]	Tezuka T, Sugiyama N, Mizuno T, Takagi S I 2003 IEEE Trans. Electron Devices 50 1328
[17]	Rim K, Narasilha S, Longstreet M, Mocuta A, Cai J 2002 International Electron Devices Meeting, San Francisco, December 8—11, 2002 p43
[18]	Flachowsky S, Wei A, Herrmann T, Illgen R, Horstmann M, Richter R, Salz H, Klix W, Stenzel R 2008 Materials Science and Engineering B 154 98

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