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Two popular interpolation formulas of calculating InGaAsSb quaternary alloy band gap energy are discussed, and the calculation results from them are presented and compared. It is found, after the two formulas have been converted into equivalent formulas in the same forms, that in them there is taken into consideration only the influence of bowing parameter in the Γ valley. In this paper, the effect of the spin-orbit splitting on the valence band is considered, and a new method of calculating the InGaAsSb band gap is proposed by introducing the bowing parameter of spin-orbit splitting. The results show that the introduction of the bowing parameter of spin-orbit splitting can improve the accuracy of the calculation results compared with the above two methods. When the fraction of In is less than 0.72, the calculation obtained from our method is most accurate.
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Keywords:
- InGaAsSb /
- band gap /
- bowing parameter
[1] Xing J L, Zhang Y, Xu Y Q, Wang G W, Wang J, Xiang W, Ni H Q, Ren Z W, He Z H, Niu Z C 2014 Chin. Phys. B 23 017805
[2] Yang P L, Dai S X, Yi C S, Zhang P Q, Wang X S, Wu Y H, Xu Y S, Lin C G 2014 Acta Phys. Sin. 63 014210 (in Chinese) [杨佩龙, 戴世勋, 易昌申, 张培晴, 王训四, 吴越豪, 许银生, 林常规 2014 63 014210]
[3] Xing W X, Zhang W, Shi L C, Wang W, Zhao H, Li Z G, Huang Y D, Peng J D 2010 Acta Phys. Sin. 59 8640 (in Chinese) [邢文鑫, 张巍, 石立超, 王雯, 赵红, 李志广, 黄翊东, 彭江得 2010 59 8640]
[4] Sadao A 1987 J. Appl. Phys. 61 4869
[5] Magri R, Zunger A, Kroemer H 2005 J. Appl. Phys. 98 043701
[6] Vurgaftman I, Meyer J R, Ram-Mohan L R 2001 Appl. Phys. Rev. 89 5815
[7] Guo X 2009 M. S. Thesis (Changchun: Jilin University) (in Chinese) [郭欣 2009 硕士学位论文 (长春: 吉林大学)]
[8] Rodriguez J B, Cerutti L, Tournié E 2009 Appl. Phys. Lett. 94 023506
[9] Zhang Y, Wang Y B, Xu Y Q, Xu Y, Niu Z C, Song G F 2012 J. Semicond. 33 044006
[10] Barrios P, Gupta J, Lapointe J, Aers G, Storey C 2010 Rev. Cub. Fisica 27 42
[11] Gupta J A, Barrios P J, Lapointe J, Aers G C, Storey C, Waldron P 2009 IEEE Photon. Technol. Lett. 21 1532
[12] Williams C K, Glisson T H, Hauser J R, Littlejohn M A 1978 J. Electron. Mater. 7 639
[13] Moon R L, Antypas G A, James L W 1974 J. Electron. Mater. 3 635
[14] Qteish A, Needs R J 1992 Phys. Rev. B 45 1317
[15] Van de Walle C G 1989 Phys. Rev. B 39 1871
[16] Choi H K, Turner G W 1997 Phys. Scr. T69 17
[17] Dewinter J C, Pollack M A, Srivastava A K, Zyskind J L 1985 J. Electron. Mater. 14 729
[18] Xu G Y, Li A Z 2004 Acta Phys. Sin. 53 218 (in Chinese) [徐刚毅, 李爱珍 2004 53 218]
[19] Zhang Y, Wang G W, Tang B, Xu Y Q, Xu Y, Song G F 2011 J. Semicond. 32 103002
[20] Shterengas L, Belenky G, Kisin M V, Donetsky D 2007 Appl. Phys. Lett. 90 011119
[21] Paajaste J 2013 Ph. D. Dissertation (Tampere: Tampere University of Technology)
[22] Zhang Y G, Zheng Y L, Lin C, Li A Z, Liu S 2006 Chin. Phys. Lett. 23 2262
[23] Bi W G, Li A Z, Zheng Y L, Wang J X, Li C C 1992 J. Infrared Mlllim. Waves 11 415 (in Chinese) [毕文刚, 李爱珍, 郑燕兰, 王建新, 李存才 1992 红外与毫米波学报 11 415]
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[1] Xing J L, Zhang Y, Xu Y Q, Wang G W, Wang J, Xiang W, Ni H Q, Ren Z W, He Z H, Niu Z C 2014 Chin. Phys. B 23 017805
[2] Yang P L, Dai S X, Yi C S, Zhang P Q, Wang X S, Wu Y H, Xu Y S, Lin C G 2014 Acta Phys. Sin. 63 014210 (in Chinese) [杨佩龙, 戴世勋, 易昌申, 张培晴, 王训四, 吴越豪, 许银生, 林常规 2014 63 014210]
[3] Xing W X, Zhang W, Shi L C, Wang W, Zhao H, Li Z G, Huang Y D, Peng J D 2010 Acta Phys. Sin. 59 8640 (in Chinese) [邢文鑫, 张巍, 石立超, 王雯, 赵红, 李志广, 黄翊东, 彭江得 2010 59 8640]
[4] Sadao A 1987 J. Appl. Phys. 61 4869
[5] Magri R, Zunger A, Kroemer H 2005 J. Appl. Phys. 98 043701
[6] Vurgaftman I, Meyer J R, Ram-Mohan L R 2001 Appl. Phys. Rev. 89 5815
[7] Guo X 2009 M. S. Thesis (Changchun: Jilin University) (in Chinese) [郭欣 2009 硕士学位论文 (长春: 吉林大学)]
[8] Rodriguez J B, Cerutti L, Tournié E 2009 Appl. Phys. Lett. 94 023506
[9] Zhang Y, Wang Y B, Xu Y Q, Xu Y, Niu Z C, Song G F 2012 J. Semicond. 33 044006
[10] Barrios P, Gupta J, Lapointe J, Aers G, Storey C 2010 Rev. Cub. Fisica 27 42
[11] Gupta J A, Barrios P J, Lapointe J, Aers G C, Storey C, Waldron P 2009 IEEE Photon. Technol. Lett. 21 1532
[12] Williams C K, Glisson T H, Hauser J R, Littlejohn M A 1978 J. Electron. Mater. 7 639
[13] Moon R L, Antypas G A, James L W 1974 J. Electron. Mater. 3 635
[14] Qteish A, Needs R J 1992 Phys. Rev. B 45 1317
[15] Van de Walle C G 1989 Phys. Rev. B 39 1871
[16] Choi H K, Turner G W 1997 Phys. Scr. T69 17
[17] Dewinter J C, Pollack M A, Srivastava A K, Zyskind J L 1985 J. Electron. Mater. 14 729
[18] Xu G Y, Li A Z 2004 Acta Phys. Sin. 53 218 (in Chinese) [徐刚毅, 李爱珍 2004 53 218]
[19] Zhang Y, Wang G W, Tang B, Xu Y Q, Xu Y, Song G F 2011 J. Semicond. 32 103002
[20] Shterengas L, Belenky G, Kisin M V, Donetsky D 2007 Appl. Phys. Lett. 90 011119
[21] Paajaste J 2013 Ph. D. Dissertation (Tampere: Tampere University of Technology)
[22] Zhang Y G, Zheng Y L, Lin C, Li A Z, Liu S 2006 Chin. Phys. Lett. 23 2262
[23] Bi W G, Li A Z, Zheng Y L, Wang J X, Li C C 1992 J. Infrared Mlllim. Waves 11 415 (in Chinese) [毕文刚, 李爱珍, 郑燕兰, 王建新, 李存才 1992 红外与毫米波学报 11 415]
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