Influence of oxygen pressure on the lattice constants of Ba0.6Sr0.4TiO3 thin films and preparation of BaTiO3/Ba0.6Sr0.4TiO3 superlattices

Shang Jie; Zhang Hui; Cao Ming-Gang; Zhang Peng-Xiang

doi:10.7498/aps.60.016802

Abstract

Using pulsed laser deposition (PLD) technology, BaTiO3 (BT) and Ba0.6Sr0.4TiO3 (BST) single-layer films were successfully prepared through a series of optimization experiments. X-ray diffraction investigations indicated that BT and BST thin films were nearly (001)-epitaxially grown on LaAlO3 (001) substrates. And functional relation between the lattice constants of BST thin films and the oxygen pressure was close to Boltzmann function from 10-3 to 25 Pa. Then the high-quality BT/BST superlattices were also prepared under these optimal conditions. The surface topography measurement by atomic force microscopy (AFM) demonstrated that the root-mean-square (RMS) roughness of BT/BST superlattice was only 0.3048 nm. The surface smoothness has achieved the atomic scale. In addition, satellite peaks were clearly observed in the XRD spectrum. According to the position of satellite peaks that belong to (002) diffraction peak, the superperiod of superlattices was calculated and the deposition rates of BT and BST thin films were deduced. Finally, laser induced thermoelectric voltage (LITV) effect was measured for the first time in BT/BST superlattices grown on vicinal-cut single crystal substrates, which was not found in BT and BST single-layer films.

Keywords:

Authors and contacts

1.
Institute of Advanced Materials for Photo-electronics, Kunming University of Science and Technology, Kunming 650093, China

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Cited By

[1]	Cao W W, Lü T Q, Xie W G, Zhou J 2009 Chin. Phys. B 18 3054
[2]	Cui L, Lü T Q, Sun P N 2009 Chin. Phys. B 18 1658
[3]	Li J J, Yu J, Li J, Yang W M, Wu Y Y, Wang G B 2009 Acta Phys. Sin. 58 1246 (in Chinese) [李建军、于军、李佳、杨卫明、吴云翼、王耘波 2009 58 1246]
[4]	Wang L H, Yu J, Wang Y B, Cao J X, Zhao S L 2008 Acta Phys. Sin. 57 1207 (in Chinese) [王龙海、于军、王耘波、高俊雄、赵素玲 2008 57 1207]
[5]	Aulika I, Pokorny J, Zauls V, Kundzins K, Rutkis M, Petzelt J 2008 Optical Materials 30 1017
[6]	Scarisoreanu N, Filipescu M, Ioachim A, Toacsan M I, Banciu M G, Nedelcu L, Dutu A, Buda M, Alexandru H V, Dinescu M 2007 Applied Surface Science 253 8254
[7]	Benoit G, Julie G, Emmanuel D, Pierre G, David W, Bernard A, Frédéric L, Roland P, Xavier G, Marc A 2007 Journal of the European Ceramic Society 27 3851
[8]	Scott J F, Annu 1998 Rev. Mater. Sci. 28 79
[9]	Takasu H 2000 J. Electroceram. 4 327
[10]	Cheng H F 1996 J. Appl. Phys. 79 7965
[11]	Lariviere G P, Frigerio J M, Rivory J, Abeles F 1992 Appl. Opt. 31 6509
[12]	Borgogno J P, Flory F, Roche P, Schmitt B, Albert G, Pelletier E, Macleod H A 1984 Appl. Opt. 23 3567
[13]	Ning Z Y, Jing M F, Xin Y, Ye C 2008 Thin Solid Film Materials and Preparation Technology (Beijing: Science Press) p108 (in Chinese) [宁兆元、江美福、辛煜、叶超 2008 固体薄膜材料与制备技术(北京:科学出版社) 第108页]
[14]	Wu H D, Barnes F S 1998 in: O. Auciello (Ed.), Integrated Ferroelectrics,Proceedings of the 10th International Symposium on Integrated Ferroelectrics,Monterey, U.S.A, March 1—4 22 291
[15]	Horwitz J S, Chang W, Carter A C, Pond J M, Kirchoefer S W, Chrisey D B, Levy J, Hubert C 1998 in: O. Auciello (Ed.), Integrated Ferroelectrics, Proceedings of the 10th International Symposium on Integrated Ferroelectrics, Monterey, U.S.A, March 1—4 22 279
[16]	Jain M, Majumder S B, Katiyar R S, Miranda F A, Van Keuls F W 2003 Appl. Phys. Lett. 82 1911
[17]	Joshi P C, Cole M W 2000 Appl. Phys. Lett. 77 289
[18]	Kim W J, Chang W, Qadri S B, Pond J M, Kirchoefer S W, Chrisey D B, Horwitz J S 2000 Appl. Phys. Lett. 76 1185
[19]	Hubert C, Levy J, Rivkin T V, Carlson C, Parilla P A, Perkins J D, Ginley D S 2001 Appl. Phys. Lett. 79 2058
[20]	Kim W J, Wu H D, Chang W, Qadri S B, Pond J M, Kirchoefer S W, Chrisey D B, Horwitz J S 2000 J. Appl. Phys. 88 5448
[21]	Navi N, Kim H, Horwitz J S, Wu H D, Qadri S B 2003 Appl. Phys. A 76 841
[22]	Ding Y P, Wu J S, Meng Z Y, Chan H L, Choy Z L 2002 Materials Chemistry and Physics 75 220
[23]	Park B H, Gim Y, Fan Y, Jia Q X, Lu P 2000 Appl.Phy.Lett. 77 2587
[24]	Carlson C M, Rivkin T V, Parilla P A, Perking J D, Ginley D B, Kozyerv A B, Oshadchy V N, Pavlov A S 2000 Appl.Phy.Lett. 76 1920
[25]	Lebedev O I, Hamet J F, Van Tendeloo G , Beaumont V , Raveau B 2001 J . Appl. Phys .90 5261
[26]	Schuller Y K 1980 Phys. Rev. B 24 1597

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