GeSn合金的晶格常数对Vegard定律的偏离

苏少坚; 成步文; 薛春来; 张东亮; 张广泽; 王启明

doi:10.7498/aps.61.176104

摘要

在Si (001)衬底上, 以高质量的弛豫Ge薄膜作为缓冲层, 先后生长Sn组分x分别为2.5%, 5.2%和7.8%的完全应变的三层Ge1-xSnx合金薄膜. 在Si (001)衬底上直接生长了x分别为0.005, 0.016, 0.044, 0.070和0.155的五个弛豫Ge1-xSnx样品. 通过卢瑟福背散射谱、高分辨X射线衍射和X射线倒易空间图等方法测量了Ge1-xSnx合金的组分与晶格常数. 实验得到的晶格常数相对Vegard定律具有较大的正偏离, 弯曲系数b=0.211 Å.

关键词:

Abstract

Three layers of fully-strained Ge1-xSnx alloys with x=0.025, 0.052, and 0.078 from bottom to up are grown on a Si (001) substrate using a high-quality, strain-relaxed Ge thin film as buffer layer. Five relaxed Ge1-xSnx samples (x=0.005, 0.016, 0.044, 0.070, and 0.155) are grown directly on Si (001) substrates as well. The compositions and lattice constants of the Ge1-xSnx alloys are measured by Rutherford backscattering spectra, high-resolution X-ray diffractions, and X-ray reciprocal space mapping. The experimental results reveal a quite large positive deviation from Vegard's law with a bowing parameter b=0.211 Å.

Keywords:

作者及机构信息

1.
中国科学院半导体研究所, 集成光电子学国家重点实验室, 北京 100083

基金项目: 国家高技术研究发展计划(批准号: 2011AA010302)和国家自然科学基金(批准号: 61036003, 61176013, 60906035和 61177038)资助的课题.

Authors and contacts

1.
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Funds: Project supported by the National High Technology Research and Development Program of China (Grant No. 2011AA010302), and the National Natural Science Foundation of China (Grant Nos. 61036003, 61176013, 60906035, and 61177038).

参考文献

[1]	Roucka R, Mathews J, Beeler R T, Toll J, Kouvetakis J, Menendez J 2011 Appl. Phys. Lett. 98 061109
[2]	Mathews J, Roucka R, Xie J Q, Yu S Q, Menendez J, Kouvetakis J 2009 Appl. Phys. Lett. 95 133506
[3]	Su S J, Cheng B W, Xue C L, Wang W, Cao Q, Xue H Y, Hu W X, Zhang G Z, Zuo Y H, Wang Q M 2011 Opt. Express 19 6400
[4]	Han G Q, Su S J, Zhan C L, Zhou Q, Yang Y, Wang L X, Guo P F, Wang W, Wong C P, Shen Z X, Cheng B W, Yeo Y C 2011 IEEE International Electron Devices Meeting Washington, DC, USA, December 5-7, 2011 p402
[5]	He G, Atwater H A 1996 Appl. Phys. Lett. 68 664
[6]	Gurdal O, Desjardins P, Carlsson J R A, Taylor N, Radamson H H, Sundgren J E, Greene J E 1998 J. Appl. Phys. 83 162
[7]	Su S J, Wang W, Cheng B W, Zhang G Z, Hu W X, Xue C L, Zuo Y H, Wang Q M 2011 J. Cryst. Growth 317 43
[8]	Su S J, Wang W, Zhang G Z, Hu W X, Bai A Q, Xue C L, Zuo Y H, Cheng B W, Wang Q M 2011 Acta Phys. Sin. 60 028101 (in Chinese) [苏少坚, 汪巍, 张广泽, 胡炜玄, 白安琪, 薛春来, 左玉华, 成步文, 王启明 2011 60 028101]
[9]	Wang W, Su S J, Zheng J, Zhang G Z, Zuo Y H, Cheng B W, Wang Q M 2011 Chin. Phys. B 20 068103
[10]	Bauer M, Taraci J, Tolle J, Chizmeshya A V G, Zollner S, Smith D J, Menendez J, Hu C W, Kouvetakis J 2002 Appl. Phys. Lett. 81 2992
[11]	Shen J H, Zi J, Xie X D, Jiang P 1997 Phys. Rev. B 56 12084
[12]	Aldrich D B, Nemanich R J, Sayers D E 1994 Phys. Rev. B 50 15026
[13]	Yakoubi A, Beldi L, Bouhafs B, Ferhat M 2007 Phys. B 388 167
[14]	Chizmeshya A V G, Bauer M R, Kouvetakis J 2003 Chem. Mater. 15 2511
[15]	Chibane Y, Bouhafs B, Ferhat M 2003 Phys. Stat. Sol. (b) 240 116
[16]	Chroneos A, Jiang C, Grimes R W, Schwingenschlogl U, Bracht H 2009 Appl. Phys. Lett. 94 252104
[17]	Chibane Y, Ferhat M 2010 J. Appl. Phys. 107 053512
[18]	Beeler R, Roucka R, Chizmeshya A V G, Kouvetakis J, Menendez J 2011 Phys. Rev. B 84 035204
[19]	Cheng B W, Xue H Y, Hu D, Han G Q, Zeng Y G, Bai A Q, Xue C L, Luo L P, Zuo Y H, Wang Q M 2008 5th IEEE International Conference on Group IV Photonics Sorrento, Italy, September 17-19, 2008, p140
[20]	Su S J, Wang W, Cheng B W, Hu W X, Zhang G Z, Xue C L, Zuo Y H, Wang Q M 2011 Solid State Commun. 151 647

施引文献

[1]	Roucka R, Mathews J, Beeler R T, Toll J, Kouvetakis J, Menendez J 2011 Appl. Phys. Lett. 98 061109
[2]	Mathews J, Roucka R, Xie J Q, Yu S Q, Menendez J, Kouvetakis J 2009 Appl. Phys. Lett. 95 133506
[3]	Su S J, Cheng B W, Xue C L, Wang W, Cao Q, Xue H Y, Hu W X, Zhang G Z, Zuo Y H, Wang Q M 2011 Opt. Express 19 6400
[4]	Han G Q, Su S J, Zhan C L, Zhou Q, Yang Y, Wang L X, Guo P F, Wang W, Wong C P, Shen Z X, Cheng B W, Yeo Y C 2011 IEEE International Electron Devices Meeting Washington, DC, USA, December 5-7, 2011 p402
[5]	He G, Atwater H A 1996 Appl. Phys. Lett. 68 664
[6]	Gurdal O, Desjardins P, Carlsson J R A, Taylor N, Radamson H H, Sundgren J E, Greene J E 1998 J. Appl. Phys. 83 162
[7]	Su S J, Wang W, Cheng B W, Zhang G Z, Hu W X, Xue C L, Zuo Y H, Wang Q M 2011 J. Cryst. Growth 317 43
[8]	Su S J, Wang W, Zhang G Z, Hu W X, Bai A Q, Xue C L, Zuo Y H, Cheng B W, Wang Q M 2011 Acta Phys. Sin. 60 028101 (in Chinese) [苏少坚, 汪巍, 张广泽, 胡炜玄, 白安琪, 薛春来, 左玉华, 成步文, 王启明 2011 60 028101]
[9]	Wang W, Su S J, Zheng J, Zhang G Z, Zuo Y H, Cheng B W, Wang Q M 2011 Chin. Phys. B 20 068103
[10]	Bauer M, Taraci J, Tolle J, Chizmeshya A V G, Zollner S, Smith D J, Menendez J, Hu C W, Kouvetakis J 2002 Appl. Phys. Lett. 81 2992
[11]	Shen J H, Zi J, Xie X D, Jiang P 1997 Phys. Rev. B 56 12084
[12]	Aldrich D B, Nemanich R J, Sayers D E 1994 Phys. Rev. B 50 15026
[13]	Yakoubi A, Beldi L, Bouhafs B, Ferhat M 2007 Phys. B 388 167
[14]	Chizmeshya A V G, Bauer M R, Kouvetakis J 2003 Chem. Mater. 15 2511
[15]	Chibane Y, Bouhafs B, Ferhat M 2003 Phys. Stat. Sol. (b) 240 116
[16]	Chroneos A, Jiang C, Grimes R W, Schwingenschlogl U, Bracht H 2009 Appl. Phys. Lett. 94 252104
[17]	Chibane Y, Ferhat M 2010 J. Appl. Phys. 107 053512
[18]	Beeler R, Roucka R, Chizmeshya A V G, Kouvetakis J, Menendez J 2011 Phys. Rev. B 84 035204
[19]	Cheng B W, Xue H Y, Hu D, Han G Q, Zeng Y G, Bai A Q, Xue C L, Luo L P, Zuo Y H, Wang Q M 2008 5th IEEE International Conference on Group IV Photonics Sorrento, Italy, September 17-19, 2008, p140
[20]	Su S J, Wang W, Cheng B W, Hu W X, Zhang G Z, Xue C L, Zuo Y H, Wang Q M 2011 Solid State Commun. 151 647

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