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Three layers of fully-strained Ge1-xSnx alloys with x=0.025, 0.052, and 0.078 from bottom to up are grown on a Si (001) substrate using a high-quality, strain-relaxed Ge thin film as buffer layer. Five relaxed Ge1-xSnx samples (x=0.005, 0.016, 0.044, 0.070, and 0.155) are grown directly on Si (001) substrates as well. The compositions and lattice constants of the Ge1-xSnx alloys are measured by Rutherford backscattering spectra, high-resolution X-ray diffractions, and X-ray reciprocal space mapping. The experimental results reveal a quite large positive deviation from Vegard's law with a bowing parameter b=0.211 Å.
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Keywords:
- germanium tin alloy /
- lattice constant /
- Vegard's law /
- bowing parameter
[1] Roucka R, Mathews J, Beeler R T, Toll J, Kouvetakis J, Menendez J 2011 Appl. Phys. Lett. 98 061109
[2] Mathews J, Roucka R, Xie J Q, Yu S Q, Menendez J, Kouvetakis J 2009 Appl. Phys. Lett. 95 133506
[3] Su S J, Cheng B W, Xue C L, Wang W, Cao Q, Xue H Y, Hu W X, Zhang G Z, Zuo Y H, Wang Q M 2011 Opt. Express 19 6400
[4] Han G Q, Su S J, Zhan C L, Zhou Q, Yang Y, Wang L X, Guo P F, Wang W, Wong C P, Shen Z X, Cheng B W, Yeo Y C 2011 IEEE International Electron Devices Meeting Washington, DC, USA, December 5-7, 2011 p402
[5] He G, Atwater H A 1996 Appl. Phys. Lett. 68 664
[6] Gurdal O, Desjardins P, Carlsson J R A, Taylor N, Radamson H H, Sundgren J E, Greene J E 1998 J. Appl. Phys. 83 162
[7] Su S J, Wang W, Cheng B W, Zhang G Z, Hu W X, Xue C L, Zuo Y H, Wang Q M 2011 J. Cryst. Growth 317 43
[8] Su S J, Wang W, Zhang G Z, Hu W X, Bai A Q, Xue C L, Zuo Y H, Cheng B W, Wang Q M 2011 Acta Phys. Sin. 60 028101 (in Chinese) [苏少坚, 汪巍, 张广泽, 胡炜玄, 白安琪, 薛春来, 左玉华, 成步文, 王启明 2011 60 028101]
[9] Wang W, Su S J, Zheng J, Zhang G Z, Zuo Y H, Cheng B W, Wang Q M 2011 Chin. Phys. B 20 068103
[10] Bauer M, Taraci J, Tolle J, Chizmeshya A V G, Zollner S, Smith D J, Menendez J, Hu C W, Kouvetakis J 2002 Appl. Phys. Lett. 81 2992
[11] Shen J H, Zi J, Xie X D, Jiang P 1997 Phys. Rev. B 56 12084
[12] Aldrich D B, Nemanich R J, Sayers D E 1994 Phys. Rev. B 50 15026
[13] Yakoubi A, Beldi L, Bouhafs B, Ferhat M 2007 Phys. B 388 167
[14] Chizmeshya A V G, Bauer M R, Kouvetakis J 2003 Chem. Mater. 15 2511
[15] Chibane Y, Bouhafs B, Ferhat M 2003 Phys. Stat. Sol. (b) 240 116
[16] Chroneos A, Jiang C, Grimes R W, Schwingenschlogl U, Bracht H 2009 Appl. Phys. Lett. 94 252104
[17] Chibane Y, Ferhat M 2010 J. Appl. Phys. 107 053512
[18] Beeler R, Roucka R, Chizmeshya A V G, Kouvetakis J, Menendez J 2011 Phys. Rev. B 84 035204
[19] Cheng B W, Xue H Y, Hu D, Han G Q, Zeng Y G, Bai A Q, Xue C L, Luo L P, Zuo Y H, Wang Q M 2008 5th IEEE International Conference on Group IV Photonics Sorrento, Italy, September 17-19, 2008, p140
[20] Su S J, Wang W, Cheng B W, Hu W X, Zhang G Z, Xue C L, Zuo Y H, Wang Q M 2011 Solid State Commun. 151 647
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[1] Roucka R, Mathews J, Beeler R T, Toll J, Kouvetakis J, Menendez J 2011 Appl. Phys. Lett. 98 061109
[2] Mathews J, Roucka R, Xie J Q, Yu S Q, Menendez J, Kouvetakis J 2009 Appl. Phys. Lett. 95 133506
[3] Su S J, Cheng B W, Xue C L, Wang W, Cao Q, Xue H Y, Hu W X, Zhang G Z, Zuo Y H, Wang Q M 2011 Opt. Express 19 6400
[4] Han G Q, Su S J, Zhan C L, Zhou Q, Yang Y, Wang L X, Guo P F, Wang W, Wong C P, Shen Z X, Cheng B W, Yeo Y C 2011 IEEE International Electron Devices Meeting Washington, DC, USA, December 5-7, 2011 p402
[5] He G, Atwater H A 1996 Appl. Phys. Lett. 68 664
[6] Gurdal O, Desjardins P, Carlsson J R A, Taylor N, Radamson H H, Sundgren J E, Greene J E 1998 J. Appl. Phys. 83 162
[7] Su S J, Wang W, Cheng B W, Zhang G Z, Hu W X, Xue C L, Zuo Y H, Wang Q M 2011 J. Cryst. Growth 317 43
[8] Su S J, Wang W, Zhang G Z, Hu W X, Bai A Q, Xue C L, Zuo Y H, Cheng B W, Wang Q M 2011 Acta Phys. Sin. 60 028101 (in Chinese) [苏少坚, 汪巍, 张广泽, 胡炜玄, 白安琪, 薛春来, 左玉华, 成步文, 王启明 2011 60 028101]
[9] Wang W, Su S J, Zheng J, Zhang G Z, Zuo Y H, Cheng B W, Wang Q M 2011 Chin. Phys. B 20 068103
[10] Bauer M, Taraci J, Tolle J, Chizmeshya A V G, Zollner S, Smith D J, Menendez J, Hu C W, Kouvetakis J 2002 Appl. Phys. Lett. 81 2992
[11] Shen J H, Zi J, Xie X D, Jiang P 1997 Phys. Rev. B 56 12084
[12] Aldrich D B, Nemanich R J, Sayers D E 1994 Phys. Rev. B 50 15026
[13] Yakoubi A, Beldi L, Bouhafs B, Ferhat M 2007 Phys. B 388 167
[14] Chizmeshya A V G, Bauer M R, Kouvetakis J 2003 Chem. Mater. 15 2511
[15] Chibane Y, Bouhafs B, Ferhat M 2003 Phys. Stat. Sol. (b) 240 116
[16] Chroneos A, Jiang C, Grimes R W, Schwingenschlogl U, Bracht H 2009 Appl. Phys. Lett. 94 252104
[17] Chibane Y, Ferhat M 2010 J. Appl. Phys. 107 053512
[18] Beeler R, Roucka R, Chizmeshya A V G, Kouvetakis J, Menendez J 2011 Phys. Rev. B 84 035204
[19] Cheng B W, Xue H Y, Hu D, Han G Q, Zeng Y G, Bai A Q, Xue C L, Luo L P, Zuo Y H, Wang Q M 2008 5th IEEE International Conference on Group IV Photonics Sorrento, Italy, September 17-19, 2008, p140
[20] Su S J, Wang W, Cheng B W, Hu W X, Zhang G Z, Xue C L, Zuo Y H, Wang Q M 2011 Solid State Commun. 151 647
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