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Wang Ji-Guang, Li Long-Ling, Qiu Jia-Tu, Chen Xu-Min, Cao Dong-Xing. Tuning two-dimensional electron gas at LaAlO3/KNbO3 interface by strain gradient. Acta Physica Sinica,
2023, 72(17): 176801.
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Zhang Xue-Bing, Liu Nai-Zhang, Yao Ruo-He. Polar optical phonon scattering of two-dimensional electron gas in AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2020, 69(15): 157303.
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2019, 68(15): 158502.
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Li Qun, Chen Qian, Chong Jing. Variational study of the 2DEG wave function in InAlN/GaN heterostructures. Acta Physica Sinica,
2018, 67(2): 027303.
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2014, 63(8): 080202.
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2013, 62(20): 207303.
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Zhang Yang, Gu Shu-Lin, Ye Jian-Dong, Huang Shi-Min, Gu Ran, Chen Bin, Zhu Shun-Ming, Zhen You-Dou. Two-dimensional electron Gas in ZnMgO/ZnO heterostructures. Acta Physica Sinica,
2013, 62(15): 150202.
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2012, 61(2): 027103.
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2012, 61(23): 237302.
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Yang Xin-Sheng, Zhao Yong. The study of ZnO varistor doped with ferromagnetic manganese oxide. Acta Physica Sinica,
2008, 57(5): 3188-3192.
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2007, 56(7): 4099-4104.
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2007, 56(10): 6013-6018.
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Li Dong-Lin, Zeng Yi-Ping. Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors. Acta Physica Sinica,
2006, 55(7): 3677-3682.
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2006, 55(4): 2044-2048.
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2006, 55(3): 1379-1383.
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2004, 53(7): 2320-2324.
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2004, 53(2): 596-600.
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2000, 49(9): 1804-1808.
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