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The photovoltaic effect and the good rectifying behavior are observed in La0.88Te0.12MnO3(LTMO)/Si heterostructure fabricated by a pulsed laser deposition method. The photovoltage increases quickly to a maximum value at about 394 μs and then decreases gradually. The maximum photovoltage is about 13.7 mV at T = 80 K. The maximum photovoltage decreases with temperature increasing, which is attributed to the stronger thermal fluctuation. A nonlinear decrease of the maximum photovoltage in the photovoltages-temperature curve is observed, which is mainly caused by the change in the band structure of the LTMO layer due to the metal-insulator transition.
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Keywords:
- heterostructure /
- photovoltaic effect /
- electron-doped manganties
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[17] Jin K X, Zhao S G, Chen C L, Tan X Y, Jia X W 2009 J. Phys. D: Appl. Phys. 42 015001
[18] Tan G T, Dai S Y, Duan P, Zhou Y L, Lu H B, Chen Z H 2003 J. Appl. Phys. 93 5480
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[20] Tan G T, Dai S Y, Duan P, Zhou Y L, Lu H B, Chen Z H 2003 Phys. Rev. B 68 014426
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[22] Liu L F, Lu H B, Dai S Y, Chen Z H 2005 Acta Phys. Sin. 54 2342 (in Chinese)[刘丽峰、吕惠宾、戴守愚、陈正豪 2005 54 2342]
[23] Hu F X, Gao J, Sun J R, Shen B G 2003 Appl. Phys. Lett. 83 1869
[24] Coey J M D, Viret M, von Molnár S 1999 Adv. Phys. 48 167
[25] Tokura Y 1999 Colossal Magnetoresistive Oxides (London: Gordon and Breach)
[26] Sun J R, Shen B G, Sheng Z G, Sun Y P 2004 Appl. Phys. Lett. 85 3375
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[1] Jin S, Tiefel T H, McCormack M, Fastnacht R A, Ramesh R, Chen L H 1994 Science 264 413
[2] Fontcuberta J, Martínez B, Seffar A, Piol S, García-Muoz J L, Obradors X 1996 Phys. Rev. Lett. 76 1122
[3] Wang J Q, Barker R C, Cui G J, Tamagawa T, Halpern B L 1997 Appl. Phys. Lett. 71 3418
[4] Wang C, Liu Z L, Liu J M, Chen X M, Cui H Y, Xia C S, Yang Y, Lu W 2008 Acta Phys. Sin. 57 0502 (in Chinese)[王 茺、刘昭麟、刘俊明、陈雪梅、崔昊杨、夏长生、杨 宇、陆 卫 2008 57 0502]
[5] Yang F, Jin K J, Huang Y H, He M, Lu H B, Yang G Z 2010 Chin. Phys. B 19 087301
[6] Bowen M, Bibes M, Barthélémy A, Contour J P, Anane A, Lematre Y, Fert A 2003 Appl. Phys. Lett. 82 233
[7] Sugiura M, Uragou K, Noda M, Tachiki M, Kobayashi T 1999 Jpn. J. Appl. Phys. 38 2675
[8] Tanaka H, Zhang J, Kawai T 2001 Phys. Rev. Lett. 88 027204
[9] Lu H B, Yang G Z, Chen Z H, Dai S Y, Zhou Y L, Jin K J, Cheng B L, He M, Liu L F, Guo H Z, Fei Y Y, Xiang W F, Yan L 2004 Appl. Phys. Lett. 84 5007
[10] Katsu H, Tanaka H, Kawai T 2000 Appl. Phys. Lett. 76 3245
[11] Sun J R, Xiong C M, Shen B G, Wang P Y, Weng Y X 2004 Appl. Phys. Lett. 84 2611
[12] Lu H B, Jin K J, Huang Y H, He M, Zhao K, Cheng B L, Chen Z H, Zhou Y L, Dai S Y, Yang G Z 2005 Appl. Phys. Lett. 86 241915
[13] Mitra C, Hu Z, Raychaudhuri P, Wirth S, Csiszar S I, Hsieh H H, Lin H J, Chen C T, Tjeng L H 2003 Phys. Rev. B 67 092404
[14] Sun J R, Lai C H, Wong H K 2004 Appl. Phys. Lett. 85 37
[15] Sheng Z G, Zhao B C, Song W H, Sun Y P, Sun J R, Shen B G 2005 Appl. Phys. Lett. 87 242501
[16] Wang J Y, Chen C L, Gao G M, Han L A, Jin K X 2006 Acta Phys. Sin. 55 6617 (in Chinese)[王建元、陈长乐、高国棉、韩立安、金克新 2006 55 6617]
[17] Jin K X, Zhao S G, Chen C L, Tan X Y, Jia X W 2009 J. Phys. D: Appl. Phys. 42 015001
[18] Tan G T, Dai S Y, Duan P, Zhou Y L, Lu H B, Chen Z H 2003 J. Appl. Phys. 93 5480
[19] Tan G T, Chen Z H 2007 Acta Phys. Sin. 56 1702 (in Chinese)[谈国太、陈正豪 2007 56 1702]
[20] Tan G T, Dai S Y, Duan P, Zhou Y L, Lu H B, Chen Z H 2003 Phys. Rev. B 68 014426
[21] Tan G T, Chen Z H, Zhang X Z 2005 Acta Phys. Sin. 54 379 (in Chinese)[谈国太、陈正豪、章晓中 2005 54 379]
[22] Liu L F, Lu H B, Dai S Y, Chen Z H 2005 Acta Phys. Sin. 54 2342 (in Chinese)[刘丽峰、吕惠宾、戴守愚、陈正豪 2005 54 2342]
[23] Hu F X, Gao J, Sun J R, Shen B G 2003 Appl. Phys. Lett. 83 1869
[24] Coey J M D, Viret M, von Molnár S 1999 Adv. Phys. 48 167
[25] Tokura Y 1999 Colossal Magnetoresistive Oxides (London: Gordon and Breach)
[26] Sun J R, Shen B G, Sheng Z G, Sun Y P 2004 Appl. Phys. Lett. 85 3375
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