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InNSb alloy films are prepared on GaAs (001) substrates by the N2 radio frequency plasma-assisted molecular beam epitaxy ( RF-MBE). The N composition and the micro-structure of the samples are characterized by atom force microscopy (AFM), scanning electron microscopy (SEM), X-ray diffraction (XRD) and Raman spectroscopy. The measurement results reveal that the films have smooth surfaces and good crystalline quality, the N composition can reach 0.84%(from XRD) and most of the N atoms in the samples are at the sites of Sb atoms. The transport properties of the samples are also characterized, and the results demonstrate that our samples have lower carrier concentrations and higher mobilities. Owing to the introduction of N, a condside rable reduction of room-temperature magnetoresistance is observed.
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Keywords:
- molecular beam epitaxy /
- dilute nitrogen semiconductor /
- X-ray diffraction /
- Raman spectroscopy
[1] Weyers M, Sato M, Ando H 1992 Jpn. J. Appl. Phys. 31 L853
[2] Bi W G, Tu C W 1996 J. Appl. Phys. 80 1934
[3] Baillargeon J N, Cheng K Y, Hofler G E, Pearah P J, Hsieh K C 1992 Appl. Phys. Lett. 60 2540
[4] Bi W G, Tu C W 1998 Appl. Phys. Lett. 72 1161
[5] Kurtz S R, Allerman A A, Jones E D, Gee J M, Banas J J, Hammons B E 1999 Appl. Phys.Lett. 74 729
[6] Wang C, Chen P P, Liu Z L, Li T X, Xia C S, Chen X S, Lu W 2006 Acta. Phys. Sin. 55 7 ( in Chinese ) [王 茺、陈平平、刘昭麟、李天信、夏长生、陈效双、陆 卫 2006 55 7]
[7] Veal T D, Mahboob I, McConville C F 2004 Phys. Rev. Lett. 92 13
[8] Lindsay A, O’Reilly E P, Andreev A D, Ashley T 2008 Phys. Rev. B 77 165205
[9] Murdin B N, KamalSaadi M, Lindsay A, O’Reilly E P, Adams A R, Nott G J, Crowder J G, Pidgeon C R, Bradley I V, Wells J P R, Burke T, Johnson A D, Ashley T 2001 Appl. Phys. Lett. 78 1568
[10] Murdin B N, Adams A R, Murzyn P, Pidgeon C R, Bradley I V, Wells J P R, Matsuda Y H, Miura N, Burke T, Johnson A D 2002 Appl. Phys. Lett. 81 256
[11] Lim K P, Yoon S F, Pham H T, Tripathy S 2008 J. Phys. D: Appl. Phys. 41 165301
[12] Mahboob I, Veal T D, McConville C F 2004 J. Appl. Phys. 96 9
[13] Zhang D H, Liu W, Wang Y, Chen X Z, Li J H, Huang Z M, Zhang Sam S Y 2008 Appl. Phys. Lett. 93 131107
[14] Veal T D, Mahboob I, McConville C F, Burke T M, Ashley T 2003 Appl. Phys. Lett. 83 1776
[15] Hatami F, Kim S M, Yuen H B, Harris J S 2006 Appl. Phys. Lett. 89 133115
[16] Tim A, Louise B, Gilbert W S, Ben N M, Paul H J, Louis F J P, Tim D V, Chris F M 2006 Proc. SPIE 6206 62060L
[17] Pham H T, Yoon S F, Tan K H, Boning D 2007 Appl. Phys. Lett. 90 092115
[18] Uesugi K, Morooka N, Suemune I 1999 Appl. Phys. Lett. 74 1254
[19] Li W, Pessa M, Likonen J 2001 Appl. Phys. Lett. 78 2864
[20] Vurgaftman I, Meyer J R, Ram-Mohan L R 2001 J. Appl. Phys. 89 5815
[21] Liu H F, Xiang N, Tripathy S, Chua S J 2006 J. Appl. Phys. 99 103503
[22] Brafman O, Manor R 1995 Phys. Rev. B 51 6940
[23] Lim K P, Yoon S F, Pham H T 2009 J. Phys. D: Appl. Phys 42 135419
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[1] Weyers M, Sato M, Ando H 1992 Jpn. J. Appl. Phys. 31 L853
[2] Bi W G, Tu C W 1996 J. Appl. Phys. 80 1934
[3] Baillargeon J N, Cheng K Y, Hofler G E, Pearah P J, Hsieh K C 1992 Appl. Phys. Lett. 60 2540
[4] Bi W G, Tu C W 1998 Appl. Phys. Lett. 72 1161
[5] Kurtz S R, Allerman A A, Jones E D, Gee J M, Banas J J, Hammons B E 1999 Appl. Phys.Lett. 74 729
[6] Wang C, Chen P P, Liu Z L, Li T X, Xia C S, Chen X S, Lu W 2006 Acta. Phys. Sin. 55 7 ( in Chinese ) [王 茺、陈平平、刘昭麟、李天信、夏长生、陈效双、陆 卫 2006 55 7]
[7] Veal T D, Mahboob I, McConville C F 2004 Phys. Rev. Lett. 92 13
[8] Lindsay A, O’Reilly E P, Andreev A D, Ashley T 2008 Phys. Rev. B 77 165205
[9] Murdin B N, KamalSaadi M, Lindsay A, O’Reilly E P, Adams A R, Nott G J, Crowder J G, Pidgeon C R, Bradley I V, Wells J P R, Burke T, Johnson A D, Ashley T 2001 Appl. Phys. Lett. 78 1568
[10] Murdin B N, Adams A R, Murzyn P, Pidgeon C R, Bradley I V, Wells J P R, Matsuda Y H, Miura N, Burke T, Johnson A D 2002 Appl. Phys. Lett. 81 256
[11] Lim K P, Yoon S F, Pham H T, Tripathy S 2008 J. Phys. D: Appl. Phys. 41 165301
[12] Mahboob I, Veal T D, McConville C F 2004 J. Appl. Phys. 96 9
[13] Zhang D H, Liu W, Wang Y, Chen X Z, Li J H, Huang Z M, Zhang Sam S Y 2008 Appl. Phys. Lett. 93 131107
[14] Veal T D, Mahboob I, McConville C F, Burke T M, Ashley T 2003 Appl. Phys. Lett. 83 1776
[15] Hatami F, Kim S M, Yuen H B, Harris J S 2006 Appl. Phys. Lett. 89 133115
[16] Tim A, Louise B, Gilbert W S, Ben N M, Paul H J, Louis F J P, Tim D V, Chris F M 2006 Proc. SPIE 6206 62060L
[17] Pham H T, Yoon S F, Tan K H, Boning D 2007 Appl. Phys. Lett. 90 092115
[18] Uesugi K, Morooka N, Suemune I 1999 Appl. Phys. Lett. 74 1254
[19] Li W, Pessa M, Likonen J 2001 Appl. Phys. Lett. 78 2864
[20] Vurgaftman I, Meyer J R, Ram-Mohan L R 2001 J. Appl. Phys. 89 5815
[21] Liu H F, Xiang N, Tripathy S, Chua S J 2006 J. Appl. Phys. 99 103503
[22] Brafman O, Manor R 1995 Phys. Rev. B 51 6940
[23] Lim K P, Yoon S F, Pham H T 2009 J. Phys. D: Appl. Phys 42 135419
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