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利用反射式高能电子衍射(RHEED)、X射线衍射(XRD)和X射线吸收近边结构谱(XANES)等技术研究了在950 ℃条件下Si(111)衬底上共蒸发分子束外延方法制备的Mn掺杂SiC磁性薄膜的结构特征.RHEED结果表明,生长的Mn掺杂SiC薄膜为立方结构.XRD和XANES结果表明,在Mn掺杂量为0.5％和18%的样品中,Mn原子均是与SiC半导体介质中的Si原子反应生成镶嵌在SiC基体中的Mn4Si7化合物颗粒,并未观察到在SiC晶格中有替代式或间隙式的M
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关键词:
- 磁性薄膜 /
- 分子束外延 /
- X射线衍射 /
- X射线吸收近边结构谱
Mn-doped SiC magnetic thin films prepared by co-deposited molecular beam epitaxy (MBE) method on Si (111) substrates at 950 ℃ have been investigated by reflection high energy diffraction (RHEED), X-ray diffraction (XRD) and X-ray absorption near edge structure (XANES) techniques. RHEED results reveal that the SiC thin films doped with Mn are of the cubic structure. XRD and XANES results show that in the thin films with Mn doping concentrations of 0.5％ and 18％ , almost all the Mn atoms react with Si atoms, forming Mn4Si7 compound embedded in the SiC matrix, and no substitutional or interstitial Mn atoms exist in the SiC lattice. Furthermore, we hold that the ferromagnetism of the Mn doped SiC thin films originates mainly from the Mn4Si7 secondary phase.-
Keywords:
- magnetic thin film /
- molecular beam epitaxy /
- X-ray diffraction /
- X-ray absorption near edge structure
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[2] Akinaga H, Ohno H 2002 IEEE Trans. Nanotechnol. 1 19
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[10] Peng X D, Zhu T, Wang F W 2009 Acta Phys. Sin. 58 3274 (in Chinese) [彭先德、朱 涛、王芳卫 2009 58 3274]
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[14] Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science 287 1019
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[22] Wang K F, Liu J F, Zou C W, Zhang W H, Xu P S, Xu F Q 2007 J. Vac. Sci. Tech. 27 4 (in Chinese) [王科范、刘金峰、邹崇文、张文华、徐彭寿、徐法强 2007 真空科学与技术学报 27 4]
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[24] Liu J F, Liu Z L, Wang K F, Xu P S, Tang H G 2007 J. Vac. Sci. Tech. 27 5(in Chinese) [刘金峰、刘忠良、王科范、徐彭寿、汤洪高 2007 真空科学与技术学报 27 5]
[25] Pan Z Y, Sun Z H,Xie Z, Yan W S, Wei S Q 2007 Acta Phys. Sin. 56 3344 (in Chinese) [潘志云、孙治湖、谢 治、阎文盛、韦世强 2007 56 3344]
[26] Wei S Q, Yan W S, Sun Z H, Zhong W J 2006 Appl. Phys. Lett. 89 121901
[27] Kim H K, Kwon D, Kim J H, Ihm Y E, Kim D J, Kim H J, Baek J S, Kim C S, Choo W K 2004 J. Magn. Magn. Mater. 282 244
[28] Teichert S, Sarkar D K, Schwendler S, Giesler H, Mogilatenko A, Falke M, Beddies G 2001 Microelectronic Engineering 55 227
[29] Wolska A, Lawniczak-Jablonska K, Klepka M, Walczak M S, Misiuk A 2007 Phys. Rev. B 75 113201
[30] Gottlieb U, Sulpice A, Lambert-Andron B, Laborde O 2003 J. Alloys Compd. 361 13
[31] Zhou S Q, Potzger K, Zhang G F, Mücklich A, Eichhorn F, Schell N, Grtzschel R, Schmidt B, Skorupa W, Helm M, Fassbender J, Geiger D 2007 Phys. Rev. B 75 085203
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[1] Ohno H 1998 Science 281 951
[2] Akinaga H, Ohno H 2002 IEEE Trans. Nanotechnol. 1 19
[3] Guo X G, Chen X S, Sun Y L, Zhou X H, Sun L Z, Lu W 2004 Acta Phys. Sin. 53 3545 (in Chinese) [郭旭光、陈效双、孙沿林、周孝好、孙立忠、陆 卫 2004 53 3545]
[4] Wang Y, Sun L, Han D D, Liu L F, Kang J F, Liu X Y, Zhang X, Han R Q 2006 Acta Phys. Sin. 55 6651 (in Chinese) [王 漪、孙 雷、韩德栋、刘力峰、康晋峰、刘晓彦、张 兴、韩汝琦 2006 55 6651]
[5] Lin Q B, Li R Q, Zeng Y Z, Zhu Z Z 2006 Acta Phys. Sin. 55 873 (in Chinese) [林秋宝、李仁全、曾永志、朱梓忠 2006 55 873]
[6] Wang Z W, Jie W Q 2007 Acta Phys. Sin. 56 1141 (in Chinese) [王泽温、介万奇 2007 56 1141]
[7] Yu Z, Li X, Long X, Cheng X W, Wang J Y, Liu Y, Cao M S, Wang F C 2008 Acta Phys. Sin. 57 4539 (in Chinese) [于 宙、李 祥、龙 雪、程兴旺、王晶云、刘 颖、曹茂盛、王富耻 2008 57 4539]
[8] Lin Z, Guo Z Y, Bi Y J, Dong Y C 2009 Acta Phys. Sin. 58 1917 (in Chinese) [林 竹、郭志友、毕艳军、董玉成 2009 58 1917]
[9] Zou W Q, Lu Z L, Wang S, Liu Y, Lu L, Li L, Zhang F M, Du Y W 2009 Acta Phys. Sin. 58 5763 (in Chinese) [邹文琴、路忠林、王 申、刘 圆、陆 路、郦 莉、张凤鸣、都有为 2009 58 5763]
[10] Peng X D, Zhu T, Wang F W 2009 Acta Phys. Sin. 58 3274 (in Chinese) [彭先德、朱 涛、王芳卫 2009 58 3274]
[11] Tsui F, He L, Ma L, Tkachuk A, Chu Y S, Nakajima K, Chikyow T 2003 Phys. Rev. Lett. 91 17203
[12] Ren P, Liu Z L, Ye J, Jiang Y, Liu J F, Sun Y, Xu P S, Sun Z H, Pan Z Y, Yan W S, Wei S Q 2008 Acta Phys. Sin. 57 4322 (in Chinese) [任 鹏、刘忠良、叶 剑、 姜 泳、刘金峰、孙 玉、徐彭寿、孙治湖、潘志云、阎文盛、韦世强 2008 57 4322]
[13] Sun Y, Sun Z H, Zhu S Y, Shi T F, Ye J, Pan Z Y, Liu W H, Wei S Q 2007 Acta Phys. Sin. 56 5471 (in Chinese) [孙 玉、孙治湖、朱三元、史同飞、叶 剑、潘志云、刘文汉、韦世强 2007 56 5471]
[14] Dietl T, Ohno H, Matsukura F, Cibert J, Ferrand D 2000 Science 287 1019
[15] Ferry D K 1975 Phys. Rev. B 12 2361
[16] Miao M S, Lambrencht W R L 2003 Phys. Rev. B 68 125204
[17] Kim Y S, Kim H, Yu B D, Choi D K, Chung Y C 2004 Key Eng. Mater. 264 1237
[18] Kim Y S, Chung Y C, Yi S C 2006 Mater. Sci. Eng. B 126 194
[19] Takano F, Wang W H, Akinaga H, Ofuchi H, Hishiki S, Ohshima T 2007 J. Appl. Phys. 101 09N510
[20] Ma S B, Sun Y P, Zhao B C, Tong P, Zhu X B, Song W H 2007 Physica B 394 122
[21] Wang K F, Liu J F, Zou C W, Xu P S, Pan H B, Zhang X G, Wang W J 2005 J. Vac. Sci. Tech. 25 75 (in Chinese) [王科范、刘金峰、邹崇文、徐彭寿、潘海滨、张西庚、王文君 2005 真空科学与技术学报 25 75]
[22] Wang K F, Liu J F, Zou C W, Zhang W H, Xu P S, Xu F Q 2007 J. Vac. Sci. Tech. 27 4 (in Chinese) [王科范、刘金峰、邹崇文、张文华、徐彭寿、徐法强 2007 真空科学与技术学报 27 4]
[23] Ankudinov A L, Bouldin C, Rehr J J, Sims J, Huang H 2002 Phys. Rev. B 65 104107
[24] Liu J F, Liu Z L, Wang K F, Xu P S, Tang H G 2007 J. Vac. Sci. Tech. 27 5(in Chinese) [刘金峰、刘忠良、王科范、徐彭寿、汤洪高 2007 真空科学与技术学报 27 5]
[25] Pan Z Y, Sun Z H,Xie Z, Yan W S, Wei S Q 2007 Acta Phys. Sin. 56 3344 (in Chinese) [潘志云、孙治湖、谢 治、阎文盛、韦世强 2007 56 3344]
[26] Wei S Q, Yan W S, Sun Z H, Zhong W J 2006 Appl. Phys. Lett. 89 121901
[27] Kim H K, Kwon D, Kim J H, Ihm Y E, Kim D J, Kim H J, Baek J S, Kim C S, Choo W K 2004 J. Magn. Magn. Mater. 282 244
[28] Teichert S, Sarkar D K, Schwendler S, Giesler H, Mogilatenko A, Falke M, Beddies G 2001 Microelectronic Engineering 55 227
[29] Wolska A, Lawniczak-Jablonska K, Klepka M, Walczak M S, Misiuk A 2007 Phys. Rev. B 75 113201
[30] Gottlieb U, Sulpice A, Lambert-Andron B, Laborde O 2003 J. Alloys Compd. 361 13
[31] Zhou S Q, Potzger K, Zhang G F, Mücklich A, Eichhorn F, Schell N, Grtzschel R, Schmidt B, Skorupa W, Helm M, Fassbender J, Geiger D 2007 Phys. Rev. B 75 085203
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