InSe的高压电输运性质研究

吴宝嘉; 李燕; 彭刚; 高春晓

doi:10.7498/aps.62.140702

摘要

高压下对InSe样品进行原位电阻率和霍尔效应测量. 电阻率测量结果显示, 样品在5–6 GPa区间呈现金属特性, 在12 GPa 的压力下发生由斜六方体层状结构到立方岩盐矿的结构相变, 且具有金属特性. 霍尔效应测量结果显示, 样品在6.6 GPa由p型半导体转变成n型半导体, 电阻率随着压力的升高而逐渐下降是由于载流子浓度升高引起的.

关键词:

InSe /
高压 /
电阻率 /
霍尔效应

Electrical resistivity and Hall-effect in InSe under high pressure are accurately measured in situ. The measurement results of electrical resistivity and the temperature dependence of electrical resistivity show that InSe undergoes semiconductor-to-metal transition at 5-6 GPa and transforms from rhombohedral layered phase P1 (InSe-I) to metallic rocksalt cubic phase P3 (InSe-III) at 12 GPa. Certainly, the pressure-induced metallization of InSe results from the pressure-induced structural phase transition. In addition, Hall-effect measurements display the carrier transport behavior of InSe under pressure, which indicates that InSe undergoes a carrier-type inversion around 6.6 GPa and the increases of the carrier concentration is the dominant factor producing the decrease of the resistivity after 9.9 GPa.

Keywords:

作者及机构信息

1.
延边大学理学院, 延吉 133002;

2.
吉林大学, 超硬材料国家重点实验室, 长春 130012

基金项目: 国家自然科学基金(批准号: 11074094, 11164031, 51272224)和国家重点基础研究发展计划(批准号: 2011CB808204)资助的课题.

Authors and contacts

1.
Department of Physics, College of Science, Yanbian University, Yanji 133002, China;

2.
State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11074094, 11164031, 51272224) and the National Basic Research Program of China (Grant No. 2011CB808204).

参考文献

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施引文献

[1]	Sánchez-Royo J F, Segura A, Lang O, Schaar E, Pettenkofer C, Jaegermann W, Roa L, Chevy A 2001 J. Appl. Phys. 90 2818
[2]	Putnam R S and Lancaster D G 1999 Appl. Opt. 38 1513
[3]	Kaindl R A, Eickemeyer F, Woerner M, Elsaesser T 1999 Appl. Phys. Lett. 75 1060
[4]	Martinez-Pastor J, Segura A, Valdes J L, Chevy A 1987 J. Appl. Phys. 62 1477
[5]	Julien C, Jouanne M, Burret P A, Balkanski M 1988 Solid State Lonics 28-30 1167
[6]	Balkanski M, Gomesda C P, Wallis R F 1996 Basic Solid State Phys. 194 175
[7]	Bridgman P W 1921 Am. Acad. Arts and Sci. 56 61
[8]	Bridgman P W 1951 The British J. Philosophy Sci. 1 257
[9]	Jayaraman A 1983 Rev. Modern Phys. 55 65
[10]	Segura A, Errandonea D Martínez-García D, Manjón F J, Chevy A, Tobias G, Ordejón P, Canadell E 2007 Phys. Solid State B 244 162
[11]	Polian A, Kunc K, Khun A 1976 Solid State Commun. 19 1709
[12]	Carlone C, Jandl S, Shanks H R 1981 Phys. Solid State B 103 123
[13]	Kuroda N, Ueno O, Nishina Y 1987 Phys. Rev. B 35 3860
[14]	Gauthier M, Polian A, Besson J M, Chevy A 1989 Phys. Rev. B 40 3837
[15]	Likforman A, Carre D, Etienne J, Bachet B 1975 Acta Crystallograph. B 31 1252
[16]	Manjon F J, Errandonea D, Segura A, Chervin J C, Munoz V 2002 High Pressure Research 22 261
[17]	Errandonea D, Martínez-García D, Segura A, Ruiz-Fuertes J, Lacomba-Perales R, Fages V, Chevy A, Roa L, Mnoz-San J V 2006 High Pressure Research 26 513
[18]	Vezzoli G C 1971 Mater. Res. Bull. 6 1201
[19]	Ferlat G, Martínez-García D, San Miguel A, Aouizerat A, Muñoz-Sanjosé V 2004 High Pressure Research 24 111
[20]	Errandonea D, Martínez-García D, Segura A, Haines J, Machado-Charry E, Canadell E, Chervin J C, Chevy A 2008 Phys. Rev. B 77 045208
[21]	Errandonea D, Martínez-García D, Segura A, Chevy A, Tobias G, Canadell E, Ordejon P 2006 Phys. Rev. B 73 235202
[22]	Takemura K, Minomura S, Shimomura O, Fujii Y 1980 Phys. Rev. Lett. 45 1881
[23]	Hu T J, Cui X Y, Gao Y, Han Y H, Liu C L, Liu B, Liu H, Ma Y Z, Gao C X 2010 Rev. Sci. Instrum. 81 5101
[24]	Gao C X, Han Y H, Ma Y Z, White A, Liu H W, Luo J F, Li M, He C Y, Hao A M, Huang X W, Pan Y W, Zou G T 2005 Rev. Sci. Instrum. 76 083912-1
[25]	Wu B J, Han Y H, Peng G, Liu C L, Wang Y, Gao C X 2010 Acta Phys. Sin. 59 4265 (in Chinese) [吴宝嘉, 韩永昊, 彭刚, 刘才龙, 王月, 高春晓 2010 59 4265]
[26]	Zhang J K, Han Y H, Liu C L, Ren W B, Li Y, Wang Q L, Su N N, Li Y Q, Ma B W, Ma Y Z, Gao C X 2011 J. Phys. Chem. C 115 20710
[27]	Chen A L, Yu P Y, Taylor R D 1993 Phys. Rev. Lett. 71 4011
[28]	Manjón F J, Errandonea D, Segura A, Muñoz V, Tobías G, Ordejón P, Canadell E 2001 Phys. Rev. B 63 125330
[29]	Segura A, Manjón F J, Errandonea D, Pellicer-Porres J, Muñoz V, Tobias G, Ordejón P, Canadell E, San Miguel A, Sánchez-Portal D 2003 Phys. Solid State B 235 267

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