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原位高压微米氧化锌电学性质的研究

吴宝嘉 韩永昊 彭刚 刘才龙 王月 高春晓

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原位高压微米氧化锌电学性质的研究

吴宝嘉, 韩永昊, 彭刚, 刘才龙, 王月, 高春晓

Research of in-situ electrical property of micron dimension ZnO under high pressure

Wu Bao-Jia, Han Yong-Hao, Peng Gang, Liu Cai-Long, Wang Yue, Gao Chun-Xiao
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  • 利用集成有金属薄膜电极的金刚石对顶砧,对微米氧化锌样品进行了原位高压电导率测量.结果表明,在919 GPa时样品电导率达到最小值,在919—1122 GPa时样品电导率急剧增大,说明此时样品从纤锌矿结构向岩盐矿结构转变直至完全相变,1122 GPa为相变点.通过测量不同条件下高温退火处理的样品电导率,明显看到氧空位对电导率的影响.
    Using the diamond anvil cell(DAC)method and the technology of sputtered film, photoetch and chemical etching, the conductivity of micron dimension ZnO were measured successfully under high pressure with molybdenum electrodes on DAC. The samples conductivity was minimal at 919 GPa pressure, which showed the beginning of structural phase transition from wurtzite to rocksalt. Contining compression as far as 1122 GPa, the conductivity increased rapidly and then slowly, which indicated the phase transformation pressure spot was 1122 GPa and the whole example was of rocksalt structure. In addition, it was found that the oxygen holes caused conductivity change by experimentally comparing the samples annealed at 500 ℃ in air, in argon and unannealed respectively.
    • 基金项目: 国家自然科学基金(批准号:10874053,50532020, 50802033)、国家重点基础研究发展计划(批准号:2005CB724404)和教育部创新团队发展计划(批准号:IRT0625)资助的课题.
    [1]

    [1]Lawson A W, Tang T Y 1950 Rev. Sci. Instrum. 21 815

    [2]

    [2]Mao H K, Bell P M 1976 Carnegie Institution of Washington Year Book 75 824

    [3]

    [3]Block S, Forman R A 1977 High Pressure Research: Applications in Geophysics (New York: Academic)p503

    [4]

    [4]Mao H K, Bell P M 1981 Rev. Sci. Instrum. 52 615

    [5]

    [5]Grzybowski T A, Ruoff A L 1984 Phys. Rev. Lett. 53 489

    [6]

    [6]Hemmés H, Driessen A, Kos J, Mul F A, Griessen R 1989 Rev. Sci. Instrum. 60 474

    [7]

    [7]Weir S T, Akella J, Ruddle C A, Vohra Y K, Catledge S A 2000 Appl. Phys. Lett. 77 3400

    [8]

    [8]Jackson D D, Arache R C, Malba V, Weir S T, Catledge S A, Vohra Y K 2003 Rev. Sci. Instrum. 74 2467

    [9]

    [9]Gao C X, Han Y H, Ma Y Z, White A, Liu H W, Luo J F, Li M, He C Y, Hao A M, Huang X W, Pan Y W, Zou G T 2005 Rev. Sci. Instrum. 76 083912

    [10]

    ]Han Y H, Gao C X, Ma Y Z, Liu H W, Pan Y W, Luo J F, Li M, He C Y, Huang X W, Zou G T 2005 Appl. Phys. Lett. 86 064104

    [11]

    ]Luo J F,Tang B C,Gao C X,Li M,Han Y H,Zou G T 2005 Chin. Phys. 14 1223

    [12]

    ]Itkin G, Hearne G R, Sterer E, Pasternak M P, Potzel W 1995 Phys. Rev. B 51 3195

    [13]

    ]Eremets M I, Gregoryanz E A, Struzhkin V V, Mao H K, Hemley R J 2000 Phys. Rev. Lett. 85 2797

    [14]

    ]Hu J Z, Tang R M, Xu J A 1980 Acta Phys.Sin.29 1351(in Chinese)[胡静竹、唐汝明、徐济安 1980 29 1351]

    [15]

    ]Jing L Q, Xu Z L, Sun X J 2001 Appl. Surf. Sci. 180 308

    [16]

    ]Chen J, Jin G J, Ma Y Q 2009 Acta Phys. Sin. 58 2707(in Chinese) [陈静、金国钧、马余强 2009 58 2707]

    [17]

    ]Sun H, Zhang Q F, Wu J L 2007 Acta Phys.Sin. 56 3479(in Chinese) [孙晖、张琦锋、吴锦雷 2007 56 3479]

    [18]

    ]Desgreniers S 1998 Phys. Rev.B 58 14102

    [19]

    ]Karzel H, Potzel W, Kofferlein M, Schiessl W, Steiner M, Hiller U, Kalvius G M 1996 Phys. Rev. B 53 11425

    [20]

    ]Jaffe J E, Hess A C 1993 Phys. Rev. B 48 7903

    [21]

    ]Wickham J N, Herhold A B, Alivisatos A P 2000 Phys. Rev. Lett. 84 923

    [22]

    ]Sans J A, Segura A, Mnajon F J, Mari B, Munoz A, Herrera-Cabrera M J 2005 Microelectron. J. 36 928

    [23]

    ] Dolan G J 1977 Appl. Phys. Lett. 31 337

  • [1]

    [1]Lawson A W, Tang T Y 1950 Rev. Sci. Instrum. 21 815

    [2]

    [2]Mao H K, Bell P M 1976 Carnegie Institution of Washington Year Book 75 824

    [3]

    [3]Block S, Forman R A 1977 High Pressure Research: Applications in Geophysics (New York: Academic)p503

    [4]

    [4]Mao H K, Bell P M 1981 Rev. Sci. Instrum. 52 615

    [5]

    [5]Grzybowski T A, Ruoff A L 1984 Phys. Rev. Lett. 53 489

    [6]

    [6]Hemmés H, Driessen A, Kos J, Mul F A, Griessen R 1989 Rev. Sci. Instrum. 60 474

    [7]

    [7]Weir S T, Akella J, Ruddle C A, Vohra Y K, Catledge S A 2000 Appl. Phys. Lett. 77 3400

    [8]

    [8]Jackson D D, Arache R C, Malba V, Weir S T, Catledge S A, Vohra Y K 2003 Rev. Sci. Instrum. 74 2467

    [9]

    [9]Gao C X, Han Y H, Ma Y Z, White A, Liu H W, Luo J F, Li M, He C Y, Hao A M, Huang X W, Pan Y W, Zou G T 2005 Rev. Sci. Instrum. 76 083912

    [10]

    ]Han Y H, Gao C X, Ma Y Z, Liu H W, Pan Y W, Luo J F, Li M, He C Y, Huang X W, Zou G T 2005 Appl. Phys. Lett. 86 064104

    [11]

    ]Luo J F,Tang B C,Gao C X,Li M,Han Y H,Zou G T 2005 Chin. Phys. 14 1223

    [12]

    ]Itkin G, Hearne G R, Sterer E, Pasternak M P, Potzel W 1995 Phys. Rev. B 51 3195

    [13]

    ]Eremets M I, Gregoryanz E A, Struzhkin V V, Mao H K, Hemley R J 2000 Phys. Rev. Lett. 85 2797

    [14]

    ]Hu J Z, Tang R M, Xu J A 1980 Acta Phys.Sin.29 1351(in Chinese)[胡静竹、唐汝明、徐济安 1980 29 1351]

    [15]

    ]Jing L Q, Xu Z L, Sun X J 2001 Appl. Surf. Sci. 180 308

    [16]

    ]Chen J, Jin G J, Ma Y Q 2009 Acta Phys. Sin. 58 2707(in Chinese) [陈静、金国钧、马余强 2009 58 2707]

    [17]

    ]Sun H, Zhang Q F, Wu J L 2007 Acta Phys.Sin. 56 3479(in Chinese) [孙晖、张琦锋、吴锦雷 2007 56 3479]

    [18]

    ]Desgreniers S 1998 Phys. Rev.B 58 14102

    [19]

    ]Karzel H, Potzel W, Kofferlein M, Schiessl W, Steiner M, Hiller U, Kalvius G M 1996 Phys. Rev. B 53 11425

    [20]

    ]Jaffe J E, Hess A C 1993 Phys. Rev. B 48 7903

    [21]

    ]Wickham J N, Herhold A B, Alivisatos A P 2000 Phys. Rev. Lett. 84 923

    [22]

    ]Sans J A, Segura A, Mnajon F J, Mari B, Munoz A, Herrera-Cabrera M J 2005 Microelectron. J. 36 928

    [23]

    ] Dolan G J 1977 Appl. Phys. Lett. 31 337

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计量
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  • 被引次数: 0
出版历程
  • 收稿日期:  2009-08-05
  • 修回日期:  2009-09-11
  • 刊出日期:  2010-03-05

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