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Electrical resistivity and Hall-effect in InSe under high pressure are accurately measured in situ. The measurement results of electrical resistivity and the temperature dependence of electrical resistivity show that InSe undergoes semiconductor-to-metal transition at 5-6 GPa and transforms from rhombohedral layered phase P1 (InSe-I) to metallic rocksalt cubic phase P3 (InSe-III) at 12 GPa. Certainly, the pressure-induced metallization of InSe results from the pressure-induced structural phase transition. In addition, Hall-effect measurements display the carrier transport behavior of InSe under pressure, which indicates that InSe undergoes a carrier-type inversion around 6.6 GPa and the increases of the carrier concentration is the dominant factor producing the decrease of the resistivity after 9.9 GPa.
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Keywords:
- InSe /
- high pressure /
- electrical resistivity /
- Hall-effect
[1] Sánchez-Royo J F, Segura A, Lang O, Schaar E, Pettenkofer C, Jaegermann W, Roa L, Chevy A 2001 J. Appl. Phys. 90 2818
[2] Putnam R S and Lancaster D G 1999 Appl. Opt. 38 1513
[3] Kaindl R A, Eickemeyer F, Woerner M, Elsaesser T 1999 Appl. Phys. Lett. 75 1060
[4] Martinez-Pastor J, Segura A, Valdes J L, Chevy A 1987 J. Appl. Phys. 62 1477
[5] Julien C, Jouanne M, Burret P A, Balkanski M 1988 Solid State Lonics 28-30 1167
[6] Balkanski M, Gomesda C P, Wallis R F 1996 Basic Solid State Phys. 194 175
[7] Bridgman P W 1921 Am. Acad. Arts and Sci. 56 61
[8] Bridgman P W 1951 The British J. Philosophy Sci. 1 257
[9] Jayaraman A 1983 Rev. Modern Phys. 55 65
[10] Segura A, Errandonea D Martínez-García D, Manjón F J, Chevy A, Tobias G, Ordejón P, Canadell E 2007 Phys. Solid State B 244 162
[11] Polian A, Kunc K, Khun A 1976 Solid State Commun. 19 1709
[12] Carlone C, Jandl S, Shanks H R 1981 Phys. Solid State B 103 123
[13] Kuroda N, Ueno O, Nishina Y 1987 Phys. Rev. B 35 3860
[14] Gauthier M, Polian A, Besson J M, Chevy A 1989 Phys. Rev. B 40 3837
[15] Likforman A, Carre D, Etienne J, Bachet B 1975 Acta Crystallograph. B 31 1252
[16] Manjon F J, Errandonea D, Segura A, Chervin J C, Munoz V 2002 High Pressure Research 22 261
[17] Errandonea D, Martínez-García D, Segura A, Ruiz-Fuertes J, Lacomba-Perales R, Fages V, Chevy A, Roa L, Mnoz-San J V 2006 High Pressure Research 26 513
[18] Vezzoli G C 1971 Mater. Res. Bull. 6 1201
[19] Ferlat G, Martínez-García D, San Miguel A, Aouizerat A, Muñoz-Sanjosé V 2004 High Pressure Research 24 111
[20] Errandonea D, Martínez-García D, Segura A, Haines J, Machado-Charry E, Canadell E, Chervin J C, Chevy A 2008 Phys. Rev. B 77 045208
[21] Errandonea D, Martínez-García D, Segura A, Chevy A, Tobias G, Canadell E, Ordejon P 2006 Phys. Rev. B 73 235202
[22] Takemura K, Minomura S, Shimomura O, Fujii Y 1980 Phys. Rev. Lett. 45 1881
[23] Hu T J, Cui X Y, Gao Y, Han Y H, Liu C L, Liu B, Liu H, Ma Y Z, Gao C X 2010 Rev. Sci. Instrum. 81 5101
[24] Gao C X, Han Y H, Ma Y Z, White A, Liu H W, Luo J F, Li M, He C Y, Hao A M, Huang X W, Pan Y W, Zou G T 2005 Rev. Sci. Instrum. 76 083912-1
[25] Wu B J, Han Y H, Peng G, Liu C L, Wang Y, Gao C X 2010 Acta Phys. Sin. 59 4265 (in Chinese) [吴宝嘉, 韩永昊, 彭刚, 刘才龙, 王月, 高春晓 2010 59 4265]
[26] Zhang J K, Han Y H, Liu C L, Ren W B, Li Y, Wang Q L, Su N N, Li Y Q, Ma B W, Ma Y Z, Gao C X 2011 J. Phys. Chem. C 115 20710
[27] Chen A L, Yu P Y, Taylor R D 1993 Phys. Rev. Lett. 71 4011
[28] Manjón F J, Errandonea D, Segura A, Muñoz V, Tobías G, Ordejón P, Canadell E 2001 Phys. Rev. B 63 125330
[29] Segura A, Manjón F J, Errandonea D, Pellicer-Porres J, Muñoz V, Tobias G, Ordejón P, Canadell E, San Miguel A, Sánchez-Portal D 2003 Phys. Solid State B 235 267
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[1] Sánchez-Royo J F, Segura A, Lang O, Schaar E, Pettenkofer C, Jaegermann W, Roa L, Chevy A 2001 J. Appl. Phys. 90 2818
[2] Putnam R S and Lancaster D G 1999 Appl. Opt. 38 1513
[3] Kaindl R A, Eickemeyer F, Woerner M, Elsaesser T 1999 Appl. Phys. Lett. 75 1060
[4] Martinez-Pastor J, Segura A, Valdes J L, Chevy A 1987 J. Appl. Phys. 62 1477
[5] Julien C, Jouanne M, Burret P A, Balkanski M 1988 Solid State Lonics 28-30 1167
[6] Balkanski M, Gomesda C P, Wallis R F 1996 Basic Solid State Phys. 194 175
[7] Bridgman P W 1921 Am. Acad. Arts and Sci. 56 61
[8] Bridgman P W 1951 The British J. Philosophy Sci. 1 257
[9] Jayaraman A 1983 Rev. Modern Phys. 55 65
[10] Segura A, Errandonea D Martínez-García D, Manjón F J, Chevy A, Tobias G, Ordejón P, Canadell E 2007 Phys. Solid State B 244 162
[11] Polian A, Kunc K, Khun A 1976 Solid State Commun. 19 1709
[12] Carlone C, Jandl S, Shanks H R 1981 Phys. Solid State B 103 123
[13] Kuroda N, Ueno O, Nishina Y 1987 Phys. Rev. B 35 3860
[14] Gauthier M, Polian A, Besson J M, Chevy A 1989 Phys. Rev. B 40 3837
[15] Likforman A, Carre D, Etienne J, Bachet B 1975 Acta Crystallograph. B 31 1252
[16] Manjon F J, Errandonea D, Segura A, Chervin J C, Munoz V 2002 High Pressure Research 22 261
[17] Errandonea D, Martínez-García D, Segura A, Ruiz-Fuertes J, Lacomba-Perales R, Fages V, Chevy A, Roa L, Mnoz-San J V 2006 High Pressure Research 26 513
[18] Vezzoli G C 1971 Mater. Res. Bull. 6 1201
[19] Ferlat G, Martínez-García D, San Miguel A, Aouizerat A, Muñoz-Sanjosé V 2004 High Pressure Research 24 111
[20] Errandonea D, Martínez-García D, Segura A, Haines J, Machado-Charry E, Canadell E, Chervin J C, Chevy A 2008 Phys. Rev. B 77 045208
[21] Errandonea D, Martínez-García D, Segura A, Chevy A, Tobias G, Canadell E, Ordejon P 2006 Phys. Rev. B 73 235202
[22] Takemura K, Minomura S, Shimomura O, Fujii Y 1980 Phys. Rev. Lett. 45 1881
[23] Hu T J, Cui X Y, Gao Y, Han Y H, Liu C L, Liu B, Liu H, Ma Y Z, Gao C X 2010 Rev. Sci. Instrum. 81 5101
[24] Gao C X, Han Y H, Ma Y Z, White A, Liu H W, Luo J F, Li M, He C Y, Hao A M, Huang X W, Pan Y W, Zou G T 2005 Rev. Sci. Instrum. 76 083912-1
[25] Wu B J, Han Y H, Peng G, Liu C L, Wang Y, Gao C X 2010 Acta Phys. Sin. 59 4265 (in Chinese) [吴宝嘉, 韩永昊, 彭刚, 刘才龙, 王月, 高春晓 2010 59 4265]
[26] Zhang J K, Han Y H, Liu C L, Ren W B, Li Y, Wang Q L, Su N N, Li Y Q, Ma B W, Ma Y Z, Gao C X 2011 J. Phys. Chem. C 115 20710
[27] Chen A L, Yu P Y, Taylor R D 1993 Phys. Rev. Lett. 71 4011
[28] Manjón F J, Errandonea D, Segura A, Muñoz V, Tobías G, Ordejón P, Canadell E 2001 Phys. Rev. B 63 125330
[29] Segura A, Manjón F J, Errandonea D, Pellicer-Porres J, Muñoz V, Tobias G, Ordejón P, Canadell E, San Miguel A, Sánchez-Portal D 2003 Phys. Solid State B 235 267
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