-
This paper investigates the intermediate gas phase in the CHF3 dual-frequency capacitively couple plasma (DF-CCP) driven by the high-frequency (HF) of 1356 MHz，2712 MHz or 60 MHz and the low-frequency (LF) of 2 MHz power sources，which was used to etch the SiCOH low dielectric constant (low-k) films. The increasing of 2 MHz LF power led to the increase of F radical concentration，and the increasing of HF frequency from 1356 MHz and 2712 MHz to 60 MHz led to the increase of CF2 concentration and a poor spatial uniformity of F radical between the electrodes. According to the electron temperature distribution at different LF power and HF frequency，and the dependence of ion energy on the high frequency，the CF2radicals were found to come from the CHF3 dissociation by the electron-neutrals collisions，and the F radical from the CHF3 dissociation induced by the ions-neutrals thermal collisions.
[1] ［1］Shamiryan D，Abell T，Iacopi F，Maex K 2004 Mater. Today 7 34
[2] ［2］Maex K，Baklanov M R，Shamiryan D，Iacopi F，Brongersma S H，Yanovitskaya Z S 2003 J. Appl. Phys. 93 8793
[3] ［3］Abe H，Yoneda M，Fujiwara N 2008 Jpn. J. Appl. Phys. 47 1435
[4] ［4］Tatsumi T 2007 Appl. Surf. Sci. 253 6716
[5] ［5］Eon D，Raballand V，Cartry G，Cardinaud C 2007 J. Phys. D: Appl. Phys. 40 3951
[6] ［6］Ning Z Y，Cheng S H 1999 Acta Phys. Sin. 48 1950 (in Chinese) ［宁兆元、程珊华 1999 48 1950］
[7] ［7］He L R，Gu C M，Shen W Z，Cao J C，Ogawa H，Guo Q X 2005 Acta Phys. Sin. 54 4938 (in Chinese) ［荷莉蓉、顾春明、沈文忠、曹俊诚、小川博司、郭其新 2005 54 4938］
[8] ［8］Lü L，Gong X，Hao Y 2008 Acta Phys. Sin. 57 1128 (in Chinese) ［吕玲、龚欣、郝跃 2008 57 1128］
[9] ［9］Ma X T，Zheng W H，Ren G，Fan Z C，Chen L H 2007 Acta Phys. Sin. 56 977 (in Chinese) ［马小涛、郑婉华、任刚、樊中朝、陈良惠 2007 56 977］
[10] ］Ishihara K，Shimada T，Yagisawa T，Makabe T 2006 Plasma Phys. Contr. Fusion B 48 99
[11] ］Miyauchi M，Miyoshi Y，PetroviDc＇ Z L，Makabe T 2007 Solid-State Electron. 51 1418
[12] ］Denda T，Miyoshi Y，Komukai Y，Goto T，PetroviDc＇ Z L，Makabe T 2004 J. Appl. Phys. 95 870
[13] ］Uchida S，Takashima S，Hori M，Fukasawa M，Ohshima K，Nagahata K，Tatsumi T 2008 J. Appl. Phys. 103 073303
[14] ］Kinoshita K，Noda S，Morishita S，Itabashi N，Okigawa M，Sekine M，Inoue M 1999 J. Vac. Sci. Technol. A 17 1520
[15] ］Georgieva V，Bogaerts A 2005 J. Appl. Phys. 98 023308
[16] ］Ye C，Xu Y J，Huang X J，Ning Z Y 2009 Thin Solid Films (to be appeared)
[17] ］Xu Y J，Ye C，Huang X J，Yuan J，Xing Z Y，Ning Z Y 2008 Chin. Phys. Lett. 25 2942
[18] ］Qayyum A，Zeb S，Naveed M A，Ghauri S A，Zakaullah M，Waheed A 2005 J. Appl. Phys. 98 103303
[19] ］Chingsungnoen A，Wilson J I B，Amornkitbamrung V，Thomas C，Burinprakhon T 2007 Plasma Sourc. Sci. Technol. 16 434
[20] ］Takahashi K，Hori M，Goto T 1994 Jpn. J. Appl. Phys. 33 4745
[21] ］Wang S，Xu X，Wang Y N 2007 Phys. Plasma 14 114501
[22] ］Gahan D，Dolinaj B，Hopkins M B 2008 Rev. Sci. Instrum. 79 033502
[23] ］Lee J K，Manuilenko O V，Babaeva N Y，Kim H C，Shon J W 2005 Plasma Sourc. Sci. Technol. 14 89
[24] ］Huang X J，Xin Y，Yuan Q H，Ning ZY 2008 Phys. Plasma 15 073501
[25] ］Li X S, Bi Z H, Chang D L, Li Z C, Wang S, Xu X, Xu Y, Lu W Q, Zhu A M, Wang Y N 2008 Appl. Phys. Lett. 93 031504
-
[1] ［1］Shamiryan D，Abell T，Iacopi F，Maex K 2004 Mater. Today 7 34
[2] ［2］Maex K，Baklanov M R，Shamiryan D，Iacopi F，Brongersma S H，Yanovitskaya Z S 2003 J. Appl. Phys. 93 8793
[3] ［3］Abe H，Yoneda M，Fujiwara N 2008 Jpn. J. Appl. Phys. 47 1435
[4] ［4］Tatsumi T 2007 Appl. Surf. Sci. 253 6716
[5] ［5］Eon D，Raballand V，Cartry G，Cardinaud C 2007 J. Phys. D: Appl. Phys. 40 3951
[6] ［6］Ning Z Y，Cheng S H 1999 Acta Phys. Sin. 48 1950 (in Chinese) ［宁兆元、程珊华 1999 48 1950］
[7] ［7］He L R，Gu C M，Shen W Z，Cao J C，Ogawa H，Guo Q X 2005 Acta Phys. Sin. 54 4938 (in Chinese) ［荷莉蓉、顾春明、沈文忠、曹俊诚、小川博司、郭其新 2005 54 4938］
[8] ［8］Lü L，Gong X，Hao Y 2008 Acta Phys. Sin. 57 1128 (in Chinese) ［吕玲、龚欣、郝跃 2008 57 1128］
[9] ［9］Ma X T，Zheng W H，Ren G，Fan Z C，Chen L H 2007 Acta Phys. Sin. 56 977 (in Chinese) ［马小涛、郑婉华、任刚、樊中朝、陈良惠 2007 56 977］
[10] ］Ishihara K，Shimada T，Yagisawa T，Makabe T 2006 Plasma Phys. Contr. Fusion B 48 99
[11] ］Miyauchi M，Miyoshi Y，PetroviDc＇ Z L，Makabe T 2007 Solid-State Electron. 51 1418
[12] ］Denda T，Miyoshi Y，Komukai Y，Goto T，PetroviDc＇ Z L，Makabe T 2004 J. Appl. Phys. 95 870
[13] ］Uchida S，Takashima S，Hori M，Fukasawa M，Ohshima K，Nagahata K，Tatsumi T 2008 J. Appl. Phys. 103 073303
[14] ］Kinoshita K，Noda S，Morishita S，Itabashi N，Okigawa M，Sekine M，Inoue M 1999 J. Vac. Sci. Technol. A 17 1520
[15] ］Georgieva V，Bogaerts A 2005 J. Appl. Phys. 98 023308
[16] ］Ye C，Xu Y J，Huang X J，Ning Z Y 2009 Thin Solid Films (to be appeared)
[17] ］Xu Y J，Ye C，Huang X J，Yuan J，Xing Z Y，Ning Z Y 2008 Chin. Phys. Lett. 25 2942
[18] ］Qayyum A，Zeb S，Naveed M A，Ghauri S A，Zakaullah M，Waheed A 2005 J. Appl. Phys. 98 103303
[19] ］Chingsungnoen A，Wilson J I B，Amornkitbamrung V，Thomas C，Burinprakhon T 2007 Plasma Sourc. Sci. Technol. 16 434
[20] ］Takahashi K，Hori M，Goto T 1994 Jpn. J. Appl. Phys. 33 4745
[21] ］Wang S，Xu X，Wang Y N 2007 Phys. Plasma 14 114501
[22] ］Gahan D，Dolinaj B，Hopkins M B 2008 Rev. Sci. Instrum. 79 033502
[23] ］Lee J K，Manuilenko O V，Babaeva N Y，Kim H C，Shon J W 2005 Plasma Sourc. Sci. Technol. 14 89
[24] ］Huang X J，Xin Y，Yuan Q H，Ning ZY 2008 Phys. Plasma 15 073501
[25] ］Li X S, Bi Z H, Chang D L, Li Z C, Wang S, Xu X, Xu Y, Lu W Q, Zhu A M, Wang Y N 2008 Appl. Phys. Lett. 93 031504
Catalog
Metrics
- Abstract views: 9286
- PDF Downloads: 1225
- Cited By: 0
下载:
