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SF6 is widely used in gas insulated switchgear due to its excellent insulating and arcing performance. SF6 arc plasma has been extensively studied, but time-resolved spectral characteristics of SF6 arc plasma have not been reported. In this paper, the optical filament generated from focused femtosecond laser is used to guide the high-voltage discharge for generating SF6 plasma in SF6 environment. The SF6 plasma spectrum is obtained in a wavelength range of 300–820 nm, and the identification and attribution of the spectral lines are investigated. The S and F lines are mainly in the 300–550 nm band and 600–800 nm band, respectively. The analysis shows that the S and F atoms are mainly directly or indirectly generated by the collision between SF6 and high-energy electrons during the SF6 decomposition caused by discharge. The S ions are generated by the collision of S atoms with high-energy electrons. The time-resolved spectrum of the SF6 plasma superimposed by the continuous spectrum and the line spectrum is given, and its intensity increases and then decreases. The continuous spectrum is mainly generated by the combined effect of bremsstrahlung and recombination radiation. The recombination radiation is mainly generated by the collision of electron with ions and the recombination between molecular and atoms after SF6 decomposition. The fluorescence lifetime of S ion at 409.91 nm is 57 ns, and the fluorescence lifetime of F atom at 685.60 nm is 341 ns. The evolution law of electron temperature and density with time are given. The electron temperature reaches 2047 K in the early stage of plasma formation. After that, the electron temperature quickly falls to about 1600 K within 300 ns due to the rapid expansion of the plasma and the increase in energy loss during electron movement. At the beginning of discharge, a large number of electrons are generated due to the rapid decomposition of SF6, and the electron density is highest (
$ 10.1 \times {10^{17}}\;{\rm{c}}{{\rm{m}}^{ - {\rm{3}}}}$ ). After that, the electron density drops rapidly within 200 ns because the recombination between electrons and ions decreases with delay time. Finally, it is proved that the SF6 plasma is in local thermal equilibrium based on the Mc Whirter criterion. The results are of great significance for studying the decomposition mechanism of SF6 and the on-line monitoring technique of high-voltage equipment.-
Keywords:
- femtosecond laser-guided high-voltage discharge /
- time-resolved spectroscopy /
- electron temperature and density /
- SF6
[1] Cui Z, Zhang X X, Cheng Z, Li Y, Xiao H 2019 Spectroc. Acta Pt. A-Molec. Biomolec. Spectr. 215 187Google Scholar
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Xu J Y, Wang Q P 1987 High Voltage Apparatus 1987 9
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Li X B, Huang X, Zhao Y S, Shan C W, Geng Z X, Li X T, Lin X 2016 High Voltage Apparatus 52 55Google Scholar
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[23] 王飞鸣, 林莘, 徐建源 2014 高电压技术 40 3073Google Scholar
Wang F M, Lin X, Xu J Y 2014 High Voltage Engineering 40 3073Google Scholar
[24] 刘家合, 鲁佳哲, 雷俊杰, 高勋, 林景全 2020 69 057401Google Scholar
Liu J H, Lu J Z, Lei J J, Gao X, Lin J Q 2020 Acta Phys. Sin. 69 057401Google Scholar
[25] 董丽芳, 冉俊霞, 毛志国 2005 54 2167Google Scholar
Dong L F, Ran J X, Mao Z G 2005 Acta Phys. Sin. 54 2167Google Scholar
[26] Pagano, C, Hafeez, S, Lunney, J G 2009 J. Phys. D-Appl. Phys. 42 155205Google Scholar
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[1] Cui Z, Zhang X X, Cheng Z, Li Y, Xiao H 2019 Spectroc. Acta Pt. A-Molec. Biomolec. Spectr. 215 187Google Scholar
[2] Zhong L P, Ji S C, Wang F, Sun Q Q, Chen S, Liu J, Hai B, Tang L 2019 J. Fluor. Chem. 220 61Google Scholar
[3] Tang J, Liu F, Zhang X X, Meng Q H, Zhou J B 2012 IEEE Trns. Dielectr. Electr. Insul. 19 29Google Scholar
[4] Tang J, Liu F, Meng Q H, Zhang X X, Tao J G 2012 IEEE Trns. Dielectr. Electr. Insul. 19 37Google Scholar
[5] Zeng F P, Tang J, Sun H J, Pan J Y, Yao Q, He J J, Hou X Z 2014 IEEE Trans. Dielectr. Electr. Insul. 21 1462Google Scholar
[6] Liu K, Ji S C, Zhong L P, Zhu L P 2016 International Conference on Condition Monitoring & Diagnosis Xi’an, China, Septenber 25–28, 2016, p578
[7] Swarbrick, P 1967 Br. J. Appl. Phys. 18 419Google Scholar
[8] Gleizes A, Chervy B, Gonzalez J J 1999 J. Phys. D-Appl. Phys. 32 2060Google Scholar
[9] Girard R, Belhaouari J B, Gonzalez J J, Gleizes A 1999 J. Phys. D-Appl. Phys. 32 2890Google Scholar
[10] Rat V, André P, Aubreton J, Elchinger M F, Fauchais P, Lefort A 2001 J. Phys. D-Appl. Phys. 34 2191Google Scholar
[11] Coll I, Casanovas A M, Vial L, Gleizes A, Casanovas J 2000 J. Phys. D-Appl. Phys. 33 221Google Scholar
[12] Van Brunt R J, Herron J T 1990 IEEE Trans. Electr. Insul. 25 75Google Scholar
[13] Van Brunt R J, Herron J T 1994 Phys. Scr. 1994 9Google Scholar
[14] Gao Q Q, Niu C P, Wang X H, Yang A J, Wu Y, Murphy A B, Rong M Z, Fu X X, Liu J L, Xu Y B 2018 J. Phys. D-Appl. Phys. 51 295202Google Scholar
[15] Gao Q Q, Wang X H, Yang A J, Niu C P, Rong M Z, Jiao L L, Qing M 2019 Phys. Plasmas 26 033508Google Scholar
[16] Vacquie S, Gleizes A, Kafrouni H 1985 J. Phys. D-Appl. Phys. 18 2193Google Scholar
[17] 徐建源, 王其平 1987 高压电器 1987 9
Xu J Y, Wang Q P 1987 High Voltage Apparatus 1987 9
[18] 林莘, 李鑫涛, 徐建源, 单长旺 2016 中国电机工程学报 36 301Google Scholar
Lin X, Li X T, Xu J Y, Shan C W 2016 Proc. Chin. Soc. Elect. Eng. 36 301Google Scholar
[19] 李学斌, 黄旭, 赵义松, 单长旺, 庚振新, 李鑫涛, 林莘 2016 高压电器 52 55Google Scholar
Li X B, Huang X, Zhao Y S, Shan C W, Geng Z X, Li X T, Lin X 2016 High Voltage Apparatus 52 55Google Scholar
[20] 庚振新, 石岩, 钟建英, 林莘, 苏镇西, 张友鹏, 徐建源 2017 高压电器 53 18Google Scholar
Geng Z X, Shi Y, Zhong J Y, Lin X, Su Z X, Zhang Y P, Xu J Y 2017 High Voltage Apparatus 53 18Google Scholar
[21] 刘玉峰, 丁艳军, 彭志敏, 黄宇, 杜艳君 2014 63 205205Google Scholar
Liu Y F, Ding Y J, Peng Z M, Huang Y, Du Y J 2014 Acta Phys. Sin. 63 205205Google Scholar
[22] Eschlböck-Fuchs S, Kolmhofer P J, Bodea M A, Hechenberger J G, Huber N, Rössler R, Pedarniga J D 2015 Spectroc. Acta Pt. B-Atom. Spectr. 109 31Google Scholar
[23] 王飞鸣, 林莘, 徐建源 2014 高电压技术 40 3073Google Scholar
Wang F M, Lin X, Xu J Y 2014 High Voltage Engineering 40 3073Google Scholar
[24] 刘家合, 鲁佳哲, 雷俊杰, 高勋, 林景全 2020 69 057401Google Scholar
Liu J H, Lu J Z, Lei J J, Gao X, Lin J Q 2020 Acta Phys. Sin. 69 057401Google Scholar
[25] 董丽芳, 冉俊霞, 毛志国 2005 54 2167Google Scholar
Dong L F, Ran J X, Mao Z G 2005 Acta Phys. Sin. 54 2167Google Scholar
[26] Pagano, C, Hafeez, S, Lunney, J G 2009 J. Phys. D-Appl. Phys. 42 155205Google Scholar
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