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A new-type GaAs photocathode with ultrafast time response, that is, the large exponential-doping transmission-mode GaAs photocathode, is discussed in detail. The response characteristics, including quantum yield, time and spatial resolution, are numerically simulated. The analysis results show that the transit response time of the photo-excited electrons for the GaAs photocathode is extremely shortened, because the built-in electric field in GaAs layer formed by the large exponential-doping mode is benefitcial to the photoelectron transport process of GaAs photocathodes. The response time can reach about 10 ps when the thickness of GaAs dgorption layer is around, which shows that the novel NEA cathode has a better feature of temporal response than that of traditional GaAs photocathode. In addition, the quantum yield will reach ～10%-20% in the whole special response range, and the spatial resolution is improved obviously. The analysis results indicate that with high quantum efficiency guaranteed, the large exponential-doping NEA cathode overcomes the limitation of time response of traditional GaAs NEA cathode and improves the spatial resolution, which indicates that the new NEA cathode is expected to meet the demands of high-speed device and photoelectron device, and promote the further development and applications of NEA cathodes.
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Keywords:
- large exponential-doping /
- built-in electric field /
- quantum yield /
- time and spatial resolution
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[3] Zhou L W, Li Y, Zhang Z Q, Monastyrskl M A, Schelev M Y 2005 Acta Phys. Sin. 54 3591 (in Chinese) [周立伟, 李元, 张智诠, M. A. Monastyrski, M. Y. Schelev 2005 54 3591]
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[5] Jones L B, Rozhkov S A, Bakin V V, Kosolobov S N, Militsyn B L, Scheibler H E, Smith S L, Tereldiov A S 2009 18th International Spin Physics Symposium Spin. Phys. 1149 1057
[6] Aulenbacher K, Schuler J, Harrach D V, Reichert E, Röthgen J, Subashev A, Tioukine V, Yashin Y 2002 J. Appl. Phys. 92 7536
[7] Guo L H, Li J M, Hou X 1990 Solid State Electronics 33 435
[8] Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese) [邹继军, 常本康, 杨智 2007 56 2992]
[9] Escher J S, Schade H 1973 J. Appl. Phys. 44 5309
[10] Fisher D G, Enstrom R E 1972 J. Appl. Phys. 43 3815
[11] Freeman K R, Hobson G S 1972 IEEE Trans. ED-19 62
[12] Vergara G, Herrera-Gómez A, Spicer W E 1997 J. Appl. Phys. 83(9) 1809
[13] Zou J J, Chang B K, Yang Z, Zhang Y J, Qiao J L 2007 Acta Phys. Sin. 58 5842 ( in Chinese) [邹继军, 常本康, 杨智, 张益军, 乔建良 2009 58 5842]
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[1] Zuic I, Fabian J, Samma S D 2004 Rev. Mod. Phys. 76 323
[2] Guo L J, Wiistenberg J P, Oleksiy A, Bauer M, Aeschlimann M 2005 Acta Phys．Sin 54 3200 (in Chinese) [郭立俊, J. P. Wtlstenberg, A. Oleksiy, M. Bauer, M. Aeschlimann 2005 54 3200]
[3] Zhou L W, Li Y, Zhang Z Q, Monastyrskl M A, Schelev M Y 2005 Acta Phys. Sin. 54 3591 (in Chinese) [周立伟, 李元, 张智诠, M. A. Monastyrski, M. Y. Schelev 2005 54 3591]
[4] Phillips C C, Hughes A E, Sibbert W 1984 J. Phys. D: Appl. Phys. 17 1713
[5] Jones L B, Rozhkov S A, Bakin V V, Kosolobov S N, Militsyn B L, Scheibler H E, Smith S L, Tereldiov A S 2009 18th International Spin Physics Symposium Spin. Phys. 1149 1057
[6] Aulenbacher K, Schuler J, Harrach D V, Reichert E, Röthgen J, Subashev A, Tioukine V, Yashin Y 2002 J. Appl. Phys. 92 7536
[7] Guo L H, Li J M, Hou X 1990 Solid State Electronics 33 435
[8] Zou J J, Chang B K, Yang Z 2007 Acta Phys. Sin. 56 2992 (in Chinese) [邹继军, 常本康, 杨智 2007 56 2992]
[9] Escher J S, Schade H 1973 J. Appl. Phys. 44 5309
[10] Fisher D G, Enstrom R E 1972 J. Appl. Phys. 43 3815
[11] Freeman K R, Hobson G S 1972 IEEE Trans. ED-19 62
[12] Vergara G, Herrera-Gómez A, Spicer W E 1997 J. Appl. Phys. 83(9) 1809
[13] Zou J J, Chang B K, Yang Z, Zhang Y J, Qiao J L 2007 Acta Phys. Sin. 58 5842 ( in Chinese) [邹继军, 常本康, 杨智, 张益军, 乔建良 2009 58 5842]
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