| [1] |
Wu Di, Yang Yong, Zhang Xiao-Feng, Huang Zhen-Yi, Wang Zhao-Dong. First-principles study on effect of alloying elements on heterogeneous nucleation of reverse austenite on Cu precipitation. Acta Physica Sinica,
2022, 71(8): 086301.
doi: 10.7498/aps.71.20212144
|
| [2] |
Zhong Zi-Yuan, He Kai, Yuan Yun, Wang Tao, Gao Gui-Long, Yan Xin, Li Shao-Hui, Yin Fei, Tian Jin-Shou. Photorefractive effect of low-temperature-grown aluminum gallium arsenide. Acta Physica Sinica,
2019, 68(16): 167801.
doi: 10.7498/aps.68.20190459
|
| [3] |
Zhang Jin-Shuai, Huang Qiu-Shi, Jiang Li, Qi Run-Ze, Yang Yang, Wang Feng-Li, Zhang Zhong, Wang Zhan-Shan. Stress and structure properties of X-ray W/Si multilayer under low temperature annealing. Acta Physica Sinica,
2016, 65(8): 086101.
doi: 10.7498/aps.65.086101
|
| [4] |
Zhang Yue, Zhao Jian, Dong Peng, Tian Da-Xi, Liang Xing-Bo, Ma Xiang-Yang, Yang De-Ren. Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralaki silicon. Acta Physica Sinica,
2015, 64(9): 096105.
doi: 10.7498/aps.64.096105
|
| [5] |
Jiang Li-Li, Lu Zhong-Lin, Zhang Feng-Ming, Lu Xiong. Effects of low-temperature annealing phosphorous gettering process on the electrical properties of multi-crystalline silicon with a low minority carrier lifetime. Acta Physica Sinica,
2013, 62(11): 110101.
doi: 10.7498/aps.62.110101
|
| [6] |
Liu Xian-Ming, Li Bin-Cheng, Gao Wei-Dong, Han Yan-Ling. Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers. Acta Physica Sinica,
2010, 59(3): 1632-1637.
doi: 10.7498/aps.59.1632
|
| [7] |
Cui Can, Ma Xiang-Yang, Yang De-Ren. Effect of ramping from low temperatures on oxygen precipitation in Czochralski silicon. Acta Physica Sinica,
2008, 57(2): 1037-1042.
doi: 10.7498/aps.57.1037
|
| [8] |
Xu Jin, Li Fu-Long, Yang De-Ren. Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy. Acta Physica Sinica,
2007, 56(7): 4113-4116.
doi: 10.7498/aps.56.4113
|
| [9] |
Zhang Xi-Jian, Ma Hong-Lei, Wang Qing-Pu, Ma Jin, Zong Fu-Jian, Xiao Hong-Di, Ji Feng. Effect of annealing on optical properties of MgxZn1－xO thin films deposited at low temperature. Acta Physica Sinica,
2006, 55(1): 437-440.
doi: 10.7498/aps.55.437
|
| [10] |
Wang Guo-Liang, Liang Kai-Ming, Liu Wei, Zhou Feng. The investigation on the nucleation mechanism of Au-containing glass in an electric field. Acta Physica Sinica,
2004, 53(11): 3966-3970.
doi: 10.7498/aps.53.3966
|
| [11] |
Jiang Le, Yang De-Ｒen, Yu Ｘue-Ｇong, Ma Xiang-Yang, Xu Jin, Que Duan-Lin. Effect of nitrogen on oxygen precipitation in Czochralski silicon during high-te mperature annealing. Acta Physica Sinica,
2003, 52(8): 2000-2004.
doi: 10.7498/aps.52.2000
|
| [12] |
Dong Zheng-Gao, Shen Ming-Rong, Xu Run, Gan Zhao-Qiang, Ge Shui-Bing. . Acta Physica Sinica,
2002, 51(12): 2896-2900.
doi: 10.7498/aps.51.2896
|
| [13] |
Xu Qiang, Wang Jian-Bao, Yuan Jian, Lu Fang, Sun Heng-Hui. . Acta Physica Sinica,
1995, 44(3): 432-438.
doi: 10.7498/aps.44.432
|
| [14] |
DU KAI-YING, RAO HAI-BO. NUCLEATION MECHANISM OF THE SOLID PHASE CRY STALLIZATION OF a-Si:H FILMS CONTROLLED BY LIGHTLY DOPING IN LOW-TEMPE-RATURE ANNEALING. Acta Physica Sinica,
1994, 43(6): 966-972.
doi: 10.7498/aps.43.966
|
| [15] |
YUAN JIAN, LU FANG, SUN HENG-HUI, WEI XING, YANG MIN, HUANG DA-MING, XU HONG-LAI, SHEN HONG-LIE, ZOU SHI-CHANG. STUDY OF ELECTRICAL PROPERTIES OF HEAVILY BORON DOPED Si EPILAYER AFTER RAPID THERMAL ANNEALING. Acta Physica Sinica,
1994, 43(7): 1137-1143.
doi: 10.7498/aps.43.1137
|
| [16] |
HOU JIAN-GUO, WU ZI-QIN. APPEARENCE OF FRACTAL REGION IN ANNEALED a-Ge/Au BILAYER THIN FILMS. Acta Physica Sinica,
1988, 37(10): 1735-1740.
doi: 10.7498/aps.37.1735
|
| [17] |
LI SI-YUAN, ZHANG TONG-JUN, WANG IU-ZHEN, LI SHOU-SONG, YIN ZHI-PING. ANNEALING PROPERTIES OF GOLD-DOPED AND UNDOPED Si-SiO2 INTERFACES IN DRY OXYGEN. Acta Physica Sinica,
1985, 34(6): 715-724.
doi: 10.7498/aps.34.715
|
| [18] |
GAO YU-ZUN. TEM INVESTIGATION OF OXYGEN PRECIPITATES AND INDUCED DEFECTS IN ANNEALED CZ-Si SINGLE CRYSTAL. Acta Physica Sinica,
1984, 33(6): 840-844.
doi: 10.7498/aps.33.840
|
| [19] |
MO DANG, LU YIN-CHENG, LI DAN-HUI, LIU SHANG-HE, LU WU-XING. ELLIPSOMETRIC STUDY OF DAMAGE AND ANNEALING IN ARSENIC ION IMPLANTED SILICON. Acta Physica Sinica,
1980, 29(9): 1214-1216.
doi: 10.7498/aps.29.1214
|
| [20] |
Xu Zhen-jia, Chen Yu-zhang, Jiang De-sheng, Song Chun-ying, Li He-cheng, Song Xiang-fang, Ye Yi-ying. INFRARED ABSORPTION OF OXYGEN IN SILICON AND GERMANIUM AT LOW TEMPERATURES. Acta Physica Sinica,
1980, 29(7): 867-877.
doi: 10.7498/aps.29.867
|
下载:
