| [1] |
Sun Yu-Xin, Wu De-Fan, Zhao Tong, Lan Wu, Yang De-Ren, Ma Xiang-Yang. Mechanical strength of Czochralski silicon crystal: Effects of co-doping germanium and nitrogen. Acta Physica Sinica,
2021, 70(9): 098101.
doi: 10.7498/aps.70.20201803
|
| [2] |
Li Xin, Huang Zhong-Mei, Liu Shi-Rong, Peng Hong-Yan, Huang Wei-Qi. Effect of spin levels broadening in electronic localized states of oxygen-doped nanosilocon localized state. Acta Physica Sinica,
2020, 69(17): 174206.
doi: 10.7498/aps.69.20200336
|
| [3] |
Zhang Yue, Zhao Jian, Dong Peng, Tian Da-Xi, Liang Xing-Bo, Ma Xiang-Yang, Yang De-Ren. Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralaki silicon. Acta Physica Sinica,
2015, 64(9): 096105.
doi: 10.7498/aps.64.096105
|
| [4] |
Zhang Guang-Chao, Xu Jin. Investigation of copper precipitation in denuded zone in Czochralski silicon. Acta Physica Sinica,
2013, 62(7): 076103.
doi: 10.7498/aps.62.076103
|
| [5] |
Wu Jun, Ma Zhi-Bin, Shen Wu-Lin, Yan Lei, Pan Xin, Wang Jian-Hua. Influence of nitrogen in diamond films on plasma etching. Acta Physica Sinica,
2013, 62(7): 075202.
doi: 10.7498/aps.62.075202
|
| [6] |
Wang Yong-Zhi, Xu Jin, Wang Na-Ting, Ji Chuan, Zhang Guang-Chao. Effect of copper precipitation on the formation of denuded zone in Czchralski silicon. Acta Physica Sinica,
2012, 61(1): 016105.
doi: 10.7498/aps.61.016105
|
| [7] |
Ji Chuan, Xu Jin. Effect of point defects on copper precipitation in heavily boron-doped Czochralski silicon p/p+ epitaxial wafer. Acta Physica Sinica,
2012, 61(23): 236102.
doi: 10.7498/aps.61.236102
|
| [8] |
Zhang En-Xia, Tang Hai-Ma, Zheng Zhong-Shan, Yu Fang, Li Ning, Wang Ning-Juan, Li Guo-Hua, Ma Hong-Zhi. Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers. Acta Physica Sinica,
2011, 60(5): 056104.
doi: 10.7498/aps.60.056104
|
| [9] |
Song Jiu-Xu, Yang Yin-Tang, Liu Hong-Xia, Zhang Zhi-Yong. First-principles study of the electonic structure of nitrogen-doped silicon carbide nanotubes. Acta Physica Sinica,
2009, 58(7): 4883-4887.
doi: 10.7498/aps.58.4883
|
| [10] |
Wang Zhen-Xia, Pan Qiang-Yan, Yong Zheng-Zhong, Hu Jian-Gang, Zhu Zhi-Yuan. Synthesis and welding of H-doped and N-doped carbon nanowires. Acta Physica Sinica,
2008, 57(3): 1818-1822.
doi: 10.7498/aps.57.1818
|
| [11] |
Xi Guang-Ping, Ma Xiang-Yang, Tian Da-Xi, Zeng Yu-Heng, Gong Long-Fei, Yang De-Ren. Effects of low-temperature annealing on oxygen precipitate nucleation in heavily arsenic-doped Czochralski silicon. Acta Physica Sinica,
2008, 57(11): 7108-7113.
doi: 10.7498/aps.57.7108
|
| [12] |
Cui Can, Ma Xiang-Yang, Yang De-Ren. Effect of ramping from low temperatures on oxygen precipitation in Czochralski silicon. Acta Physica Sinica,
2008, 57(2): 1037-1042.
doi: 10.7498/aps.57.1037
|
| [13] |
. Spectroscopic properties of Nd-doped and Nd-Al-codoped high silica glasses. Acta Physica Sinica,
2007, 56(12): 7023-7028.
doi: 10.7498/aps.56.7023
|
| [14] |
Xu Jin, Li Fu-Long, Yang De-Ren. Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy. Acta Physica Sinica,
2007, 56(7): 4113-4116.
doi: 10.7498/aps.56.4113
|
| [15] |
Da Ning, Yang Lü-Yun, Peng Ming-Ying, Meng Xian-Geng, Zhou Qin-Ling, Chen Dan-Ping, Tomoko Akai, Kohei Kadono. Specltal properties of Er3+ doped high silica glass. Acta Physica Sinica,
2006, 55(6): 2771-2776.
doi: 10.7498/aps.55.2771
|
| [16] |
Yang Shuai, Li Yang-Xian, Ma Qiao-Yun, Xu Xue-Wen, Niu Ping-Juan, Li Yong-Zhang, Niu Sheng-Li, Li Hong-Tao. FTIR study an VO2 defect in fast neutron irradiated Czochralski silicon. Acta Physica Sinica,
2005, 54(5): 2256-2260.
doi: 10.7498/aps.54.2256
|
| [17] |
Ma Hong-Ping, Xu Shi-Qing, Jiang Zhong-Hong. Spectroscopic properties of Er3+-doped heavy metal oxyfluoride bismuth silicate glasses. Acta Physica Sinica,
2004, 53(5): 1378-1383.
doi: 10.7498/aps.53.1378
|
| [18] |
Xu Jin, Yang De-Ren, Chu Jia, Ma Xiang-Yang, Que Duan-Lin. Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope. Acta Physica Sinica,
2004, 53(2): 550-554.
doi: 10.7498/aps.53.550
|
| [19] |
Li Yang-Xian, Liu He-Yan, Niu Peng-Juan, Liu Cai-Chi, Xu Yue-Sheng, Yang De-Ren, Que Duan-Lin. . Acta Physica Sinica,
2002, 51(10): 2407-2410.
doi: 10.7498/aps.51.2407
|
| [20] |
GAO YU-ZUN. TEM INVESTIGATION OF OXYGEN PRECIPITATES AND INDUCED DEFECTS IN ANNEALED CZ-Si SINGLE CRYSTAL. Acta Physica Sinica,
1984, 33(6): 840-844.
doi: 10.7498/aps.33.840
|
下载:
