[1] |
Zhou Zhan-Hui, Li Qun, He Xiao-Min. Electron transport mechanism in AlN/β-Ga2O3 heterostructures. Acta Physica Sinica,
2023, 72(2): 028501.
doi: 10.7498/aps.72.20221545
|
[2] |
Xing Hai-Ying, Zheng Zhi-Jian, Zhang Zi-Han, Wu Wen-Jing, Guo Zhi-Ying. Tunable electronic structure and optical properties of BlueP/X Te2 (X = Mo, W) van der Waals heterostructures by strain. Acta Physica Sinica,
2021, 70(6): 067101.
doi: 10.7498/aps.70.20201728
|
[3] |
Zhang Xue-Bing, Liu Nai-Zhang, Yao Ruo-He. Polar optical phonon scattering of two-dimensional electron gas in AlGaN/GaN high electron mobility transistor. Acta Physica Sinica,
2020, 69(15): 157303.
doi: 10.7498/aps.69.20200250
|
[4] |
Ma Song-Song, Shu Tian-Yu, Zhu Jia-Qi, Li Kai, Wu Hui-Zhen. Recent progress on Ⅳ-Ⅵ compound semiconductor heterojunction two-dimensional electron gas. Acta Physica Sinica,
2019, 68(16): 166801.
doi: 10.7498/aps.68.20191074
|
[5] |
Li Qun, Chen Qian, Chong Jing. Variational study of the 2DEG wave function in InAlN/GaN heterostructures. Acta Physica Sinica,
2018, 67(2): 027303.
doi: 10.7498/aps.67.20171827
|
[6] |
Guo Hai-Jun, Duan Bao-Xing, Yuan Song, Xie Shen-Long, Yang Yin-Tang. Characteristic analysis of new AlGaN/GaN high electron mobility transistor with a partial GaN cap layer. Acta Physica Sinica,
2017, 66(16): 167301.
doi: 10.7498/aps.66.167301
|
[7] |
Wang Xian-Bin, Zhao Zheng-Ping, Feng Zhi-Hong. Simulation study of two-dimensional electron gas in N-polar GaN/AlGaN heterostructure. Acta Physica Sinica,
2014, 63(8): 080202.
doi: 10.7498/aps.63.080202
|
[8] |
Zhang Yang, Gu Shu-Lin, Ye Jian-Dong, Huang Shi-Min, Gu Ran, Chen Bin, Zhu Shun-Ming, Zhen You-Dou. Two-dimensional electron Gas in ZnMgO/ZnO heterostructures. Acta Physica Sinica,
2013, 62(15): 150202.
doi: 10.7498/aps.62.150202
|
[9] |
Wang Wei, Zhou Wen-Zheng, Wei Shang-Jiang, Li Xiao-Juan, Chang Zhi-Gang, Lin Tie, Shang Li-Yan, Han Kui, Duan Jun-Xi, Tang Ning, Shen Bo, Chu Jun-Hao. Magneto-resistance for two-dimensional electron gas in GaN/AlxGa1-xN heterostructure. Acta Physica Sinica,
2012, 61(23): 237302.
doi: 10.7498/aps.61.237302
|
[10] |
Wang Ping-Ya, Zhang Jin-Feng, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue. Transport properties of two-dimensional electron gas in lattice-matched InAlN/GaN and InAlN/AlN/GaN materials. Acta Physica Sinica,
2011, 60(11): 117304.
doi: 10.7498/aps.60.117304
|
[11] |
Gu Wen-Ping, Hao Yue, Zhang Jin-Cheng, Wang Chong, Feng Qian, Ma Xiao-Hua. Degradation under high-field stress and gate stress of AlGaN/GaN HEMTs. Acta Physica Sinica,
2009, 58(1): 511-517.
doi: 10.7498/aps.58.511
|
[12] |
Zhang Jin-Cheng, Dong Zuo-Dian, Qin Xue-Xue, Zheng Peng-Tian, Liu Lin-Jie, Hao Yue. Analysis of the leakage current in GaN-based heterostructure buffer layer. Acta Physica Sinica,
2009, 58(3): 1959-1965.
doi: 10.7498/aps.58.1959
|
[13] |
Zhou Zhong-Tang, Guo Li-Wei, Xing Zhi-Gang, Ding Guo-Jian, Tan Chang-Lin, Lü Li, Liu Jian, Liu Xin-Yu, Jia Hai-Qiang, Chen Hong, Zhou Jun-Ming. The transport property of two dimensional electron gas in AlGaN/AlN/GaN structure. Acta Physica Sinica,
2007, 56(10): 6013-6018.
doi: 10.7498/aps.56.6013
|
[14] |
Zhu Bo, Gui Yong-Sheng, Zhou Wen-Zheng, Shang Li-Yan, Guo Shao-Ling, Chu Jun-Hao, Lü Jie, Tang Ning, Shen Bo, Zhang Fu-Jia. The weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas. Acta Physica Sinica,
2006, 55(5): 2498-2503.
doi: 10.7498/aps.55.2498
|
[15] |
Li Dong-Lin, Zeng Yi-Ping. Theoretical analysis about the influence of channel layer thickness on the 2D electron gas and its distribution in InP-based high-electron-mobility transistors. Acta Physica Sinica,
2006, 55(7): 3677-3682.
doi: 10.7498/aps.55.3677
|
[16] |
Guan Qing-Feng, An Chun-Xiang, Qin Ying, Zou Jian-Xin, Hao Sheng-Zhi, Zhang Qing-Yu, Dong Chuang, Zou Guang-Tian. Microstructure induced by stress generated by high-current pulsed electron beam. Acta Physica Sinica,
2005, 54(8): 3927-3934.
doi: 10.7498/aps.54.3927
|
[17] |
Kong Yue-Chan, Zheng You-Dou, Zhou Chun-Hong, Deng Yong-Zhen, Gu Shu-Lin, Shen Bo, Zhang Rong, Han Ping, Jiang Ruo-Lian, Shi Yi. Influence of polarizations and doping in AlGaN barrier on the two-dimensional electron-gas in AlGaN/GaN heterostruture. Acta Physica Sinica,
2004, 53(7): 2320-2324.
doi: 10.7498/aps.53.2320
|
[18] |
Zheng Ze-Wei, Shen Bo, Gui Yong-Sheng, Qiu Zhi-Jun, Tang Ning, Jiang Chun-Ping, Zhang Rong, Shi Yi, Zheng You-Dou, Guo Shao-Lin, Chu Jun-Hao. Study on the subband properties of AlxGa1-x N/GaN modulation-doped heterostructures. Acta Physica Sinica,
2004, 53(2): 596-600.
doi: 10.7498/aps.53.596
|
[19] |
Kong Yue-Chan, Zheng You-Dou, Chu Rong-Ming, Gu Shu-Lin. Influnce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructures. Acta Physica Sinica,
2003, 52(7): 1756-1760.
doi: 10.7498/aps.52.1756
|
[20] |
JIANG CHUN-PING, GUI YONG-SHENG, ZHENG GUO-ZHEN, MA ZHI-XUN, LI BIAO, GUO SHAO-L ING, CHU JUN-HAO. STUDY ON TRANSPORT PROPERTIES OF TWO-DIMENSIONAL ELECTRON GASES IN n-Hg0.80 Mg0.20Te INTERFACE ACCUMULATION LAYER. Acta Physica Sinica,
2000, 49(9): 1804-1808.
doi: 10.7498/aps.49.1804
|