Optical absorption of nanoclusters by sequentially implanting into SiO2 glass and subsequently annealing in a selected atmosphere

Zhang Li; Jiang Chang-Zhong; Ren Feng; Chen Hai-Bo; Shi Ying; Fu Qiang

doi:10.7498/aps.53.2910

Abstract
Ag and Cu ions were implanted sequentially into SiO2glass by using a metal vapor vacuum arc (MEVVA) source in the room temperature. Both of the doses were 5×1016 ions/cm2The accelerated voltage for Ag was 43kV and for Cu 30kV with the ion flux density～2mA/cm2The valence states of composite sa mples were observed in details by x-ray photoelectron spectroscopy (XPS). The results showed that there were metallic Ag and Cu and CuO in the sample. The formation of alloy nanoclusters have been evidenced by selected area electron diffraction (SAED), energy dispersive xray spectra (EDS) and optical absorption spectra which fit the result of theoretical simulation well. After annealed at different temperatures for 1h in either oxidizing (air) or reducing(70%N2+30%H2 gas mixture, gas pressure 20Pa) atmosphere, the absorption peaks shifted to blue and appeared a new peak during annealing in reducing atmosphere. Applying the free electron model of metal particles, we have calculated the average size of nanoclusters annealed at different temperatures, the results showed that the size of nanoclusters increased gradually with the enhancement of temperature. AgCu alloy nanoclusters were decomposed after annealing in oxidizing atmosphere. Cu atoms migrated to the surface of the sample and are oxidized; Ag nanoclusters were formed due to low oxygensilver interaction. For the sample annealed in reducing atmosphere, the alloy decomposed to Ag and Cu nanoclusters.

Keywords:
ion implantation /

nanoclusters /

annealing /

optical absorption
Authors and contacts
Zhang Li¹,

Jiang Chang-Zhong²,

Ren Feng¹,

Chen Hai-Bo¹,

Shi Ying¹,

Fu Qiang²

(1)武汉大学物理科学与技术学院，武汉 430072; (2)武汉大学物理科学与技术学院，武汉 430072;武汉大学电子显微镜中心，武汉 430072
References

Cited By

[1]	Luo Chang-Wei, Qiu Meng-Lin, Wang Guang-Fu, Wang Ting-Shun, Zhao Guo-Qiang, Hua Qing-Song. Ions beam induced luminescence study of variation of defects in zinc oxide during ion implant and after annealing. Acta Physica Sinica, 2020, 69(10): 102901. doi: 10.7498/aps.69.20200029
[2]	Zhen Kang, Gu Ran, Ye Jian-Dong, Gu Shu-Lin, Ren Fang-Fang, Zhu Shun-Ming, Huang Shi-Min, Tang Kun, Tang Dong-Ming, Yang Yi, Zhang Rong, Zheng You-Dou. Effect of oxygen implantation on microstructural and optical properties of ZnTe:O intermediate-band photovoltaic materials. Acta Physica Sinica, 2014, 63(23): 237103. doi: 10.7498/aps.63.237103
[3]	Xu Da-Qing, Zhang Yi-Men, Lou Yong-Le, Tong Jun. Influences of post-heat treatment on microstructures, optical and magnetic properties of unintentionally doped GaN epilayers implanted with Mn ions. Acta Physica Sinica, 2014, 63(4): 047501. doi: 10.7498/aps.63.047501
[4]	Li Tian-Jing, Li Gong-Ping, Ma Jun-Ping, Gao Xing-Xin. Effect of Co+ implantation on structural and optical properties in single-crystal TiO2. Acta Physica Sinica, 2011, 60(11): 116102. doi: 10.7498/aps.60.116102
[5]	Qin Xi-Feng, Liang Yi, Wang Feng-Xiang, Li Shuang, Fu Gang, Ji Yan-Ju. Range and annealing behavior of Er ions implanted in SiC. Acta Physica Sinica, 2011, 60(6): 066101. doi: 10.7498/aps.60.066101
[6]	Pan Feng, Ding Bin-Feng, Fa Tao, Cheng Feng-Feng, Zhou Sheng-Qiang, Yao Shu-De. Superparamagnetic nanoparticles formed in Fe-implanted ZnO. Acta Physica Sinica, 2011, 60(10): 108501. doi: 10.7498/aps.60.108501
[7]	Liu Xian-Ming, Li Bin-Cheng, Gao Wei-Dong, Han Yan-Ling. Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers. Acta Physica Sinica, 2010, 59(3): 1632-1637. doi: 10.7498/aps.59.1632
[8]	Zhang Da-Cheng, Shen Yan-Yan, Huang Yuan-Jie, Wang Zhuo, Liu Chang-Long. Theoretical study of nanoparticles in insulators fabricated by metal ion implantation. Acta Physica Sinica, 2010, 59(11): 7974-7978. doi: 10.7498/aps.59.7974
[9]	Zhang Hong-Hua, Zhang Chong-Hong, Li Bing-Sheng, Zhou Li-Hong, Yang Yi-Tao, Fu Yun-Chong. Optical properties revealing annealing behavior of high-temperature He-implantation induced defects in silicon carbide. Acta Physica Sinica, 2009, 58(5): 3302-3308. doi: 10.7498/aps.58.3302
[10]	Xu Zhong-Feng, Liu Li-Li, Zhao Yong-Tao, Chen Liang, Zhu Jian, Wang Yu-Yu, Xiao Guo-Qing. Highly charged ion beam-induced size modification of Au nanoparticles. Acta Physica Sinica, 2009, 58(6): 3833-3838. doi: 10.7498/aps.58.3833
[11]	Fu Wei-Jia, Liu Zhi-Wen, Liu Ming, Mu Zong-Xin, Zhang Qing-Yu, Guan Qing-Feng, Chen Kang-Min. Growth behavior of ZnO nanoparticles formed on Zn implanted Si(001) combined with thermal oxidation. Acta Physica Sinica, 2009, 58(8): 5693-5699. doi: 10.7498/aps.58.5693
[12]	Yang Yi-Tao, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng, Zhang Li-Qing. Synthesis of metallic nanoparticles in spinel via defects induced by the inert-gas-ion implantation. Acta Physica Sinica, 2009, 58(1): 399-403. doi: 10.7498/aps.58.399
[13]	Su Hai-Qiao, Xue Shu-Wen, Chen Meng, Li Zhi-Jie, Yuan Zhao-Lin, Fu Yu-Jun, Zu Xiao-Tao. Effects of Ti ion implantation and post-thermal annealing on the structural and optical properties of ZnS films. Acta Physica Sinica, 2009, 58(10): 7108-7113. doi: 10.7498/aps.58.7108
[14]	Yang Yi-Tao, Zhang Chong-Hong, Zhou Li-Hong, Li Bing-Sheng. A study of damage evolution during annealing of helium-implanted magnesium-aluminate spinel. Acta Physica Sinica, 2008, 57(8): 5165-5169. doi: 10.7498/aps.57.5165
[15]	Zhou Li-Hong, Zhang Chong-Hong, Li Bing-Sheng, Yang Yi-Tao, Song Yin. Photoluminescence of Ar+ implanted sapphire before and after annealing. Acta Physica Sinica, 2008, 57(4): 2562-2566. doi: 10.7498/aps.57.2562
[16]	Li Hui, Xie Er-Qing, Zhang Hong-Liang, Pan Xiao-Jun, Zhang Yong-Zhe. Optical properties of ZnO and MgxZn1－xO nanoparticles prepared by flame spray synthesis. Acta Physica Sinica, 2007, 56(6): 3584-3588. doi: 10.7498/aps.56.3584
[17]	Wang Nan, Kong Chun-Yang, Zhu Ren-Jiang, Qin Guo-Ping, Dai Te-Li, Nan Mao, Ruan Hai-Bo. Preparation and characteristics research of p-type ZnO films. Acta Physica Sinica, 2007, 56(10): 5974-5978. doi: 10.7498/aps.56.5974
[18]	Tang Nai-Yun, Ji Ya-Lin, Chen Xiao-Shuang, Lu Wei. Effect of proton implantation on photoluminescence of self-assembled InAs/GaAs quantum dots. Acta Physica Sinica, 2005, 54(6): 2904-2909. doi: 10.7498/aps.54.2904
[19]	Liu Xiang-Fei, Jiang Chang-Zhong, Ren Feng, Fu Qiang. Optical absorption, Raman spectra and TEM study of Ag nanoparticles formed by ion implantation into a-SiO2. Acta Physica Sinica, 2005, 54(10): 4633-4637. doi: 10.7498/aps.54.4633
[20]	TU XIAN-HUA, LI DAO-HUO. BLUE-LIGHT ENHANCEMENT EFFECT IN ION IMPLANTED NANO-Si3N4 QUANTUM DOTS. Acta Physica Sinica, 2000, 49(7): 1383-1385. doi: 10.7498/aps.49.1383

Catalog

Vol. 53, Issue 9 - 2004-05-05

Metrics

Abstract views: 7215
PDF Downloads: 939
Cited By: 0

姓名
邮箱
手机号码
标题
留言内容
验证码

Search

Article

留言板

Optical absorption of nanoclusters by sequentially implanting into SiO2 glass and subsequently annealing in a selected atmosphere

Abstract

Authors and contacts

References

Cited By

Catalog

Metrics

Authors

Referees

About Journal

About

Search

Article

留言板

Optical absorption of nanoclusters by sequentially implanting into SiO2 glass and subsequently annealing in a selected atmosphere

Abstract

Authors and contacts

References

Cited By

Catalog

Metrics

Publishing process

Authors

Referees

About Journal

About