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Zhao Shu-Yu, Xu Bin-Bin, Zhao Zhen-Yu, Lü Xue-Qin. Influence of top mirror on performance of GaN-based resonant cavity light-emitting diode. Acta Physica Sinica,
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Zhu Yu-Bo, Xu Hua, Li Min, Xu Miao, Peng Jun-Biao. Analysis of low frequency noise characteristics of praseodymium doped indium gallium oxide thin film transistor. Acta Physica Sinica,
2021, 70(16): 168501.
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Guo Wei-Ling, Deng Jie, Wang Jia-Lu, Wang Le, Tai Jian-Peng. GaN-based light emitting diode with graphene/indium antimony oxide composite transparent electrode. Acta Physica Sinica,
2019, 68(24): 247303.
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Shao Yan, Ding Shi-Jin. Effects of hydrogen impurities on performances and electrical reliabilities of indium-gallium-zinc oxide thin film transistors. Acta Physica Sinica,
2018, 67(9): 098502.
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Qin Ting, Huang Sheng-Xiang, Liao Cong-Wei, Yu Tian-Bao, Luo Heng, Liu Sheng, Deng Lian-Wen. Floating gate effect in amorphous InGaZnO thin-film transistor. Acta Physica Sinica,
2018, 67(4): 047302.
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Ning Hong-Long, Hu Shi-Ben, Zhu Feng, Yao Ri-Hui, Xu Miao, Zou Jian-Hua, Tao Hong, Xu Rui-Xia, Xu Hua, Wang Lei, Lan Lin-Feng, Peng Jun-Biao. Improved performance of the amorphous indium-gallium-zinc oxide thin film transistor with Cu-Mo source/drain electrode. Acta Physica Sinica,
2015, 64(12): 126103.
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Jiang Hao-Tian, Yang Yang, Wang Can-Xing, Zhu Chen, Ma Xiang-Yang, Yang De-Ren. Electroluminescence from SnO2/p+-Si heterostructured light-emitting device:enhancing its intensity via capping a TiO2 film. Acta Physica Sinica,
2014, 63(17): 177302.
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Li Shuai-Shuai, Liang Chao-Xu, Wang Xue-Xia, Li Yan-Hui, Song Shu-Mei, Xin Yan-Qing, Yang Tian-Lin. The preparation and characteristics research of high mobility amorphous indium gallium zinc oxide thin-film transistors. Acta Physica Sinica,
2013, 62(7): 077302.
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Liu Yu-An, Zhuang Yi-Qi, Du Lei, Su Ya-Hui. 1/f noise characterization gamma irradiation of GaN-based blue light-emitting diode. Acta Physica Sinica,
2013, 62(14): 140703.
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Li Yong-Jin, Song Zhi-Guo, Li Chen, Wan Rong-Hua, Qiu Jian-Bei, Yang Zheng-Wen, Yin Zhao-Yi, Wang Xue, Wang Qi, Zhou Da-Cheng, Yang Yong. Effects of sefl-reduction of glass matrix on the broadband near infrared emissions from Bi-doped alkali earth aluminoborosilicate glasses. Acta Physica Sinica,
2013, 62(11): 117801.
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Gao Hui, Kong Fan-Min, Li Kang, Chen Xin-Lian, Ding Qing-An, Sun Jing. Structural optimization of GaN blue light LED with double layers of photonic crystals. Acta Physica Sinica,
2012, 61(12): 127807.
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Tang Yi-Dan, Shen Guang-Di, Guo Xia, Guan Bao-Lu, Jiang Wen-Jing, Han Jin-Ru. High performance resonant cavity light emitting diode with dielectric distributed Bragg reflectors. Acta Physica Sinica,
2012, 61(1): 018503.
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Li Shui-Qing, Wang Lai, Han Yan-Jun, Luo Yi, Deng He-Qing, Qiu Jian-Sheng, Zhang Jie. A new growth method of roughed p-GaN in GaN-based light emitting diodes. Acta Physica Sinica,
2011, 60(9): 098107.
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Dong Ya-Juan, Zhang Jun-Bing, Chen Hai-Tao, Zeng Xiang-Hua. Performance of power omnidirectimal reflector LED. Acta Physica Sinica,
2011, 60(7): 077803.
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Dong Li-Fang, Yang Li, Li Yong-Hui, Zhang Yan-Zhao, Yue Han. Spatial distributions of the intensity of luminescence and the vibrational temperature of single micro-discharge channel in air dielectric barrier discharge. Acta Physica Sinica,
2009, 58(12): 8461-8466.
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Li Wen-Ping, Zhang Ya-Xin, Liu Sheng-Gang, Liu Da-Gang. Kinetic theory of a novel THZ gyrotron with three-mirror quasi-optical cavity. Acta Physica Sinica,
2008, 57(5): 2875-2881.
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di. Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica,
2006, 55(3): 1424-1429.
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Wei Qiang, Liu Hai, He Shi-Yu, Hao Xiao-Peng, Wei Long. Slow positron annihilation study of Al film reflector after proton irradiation. Acta Physica Sinica,
2006, 55(10): 5525-5530.
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Meng Qing-Yu, Chen Bao-Jiu, Zhao Xiao-Xia, Yan Bin, Wang Xiao-Jun, Xu Wu. Luminescence intensity of Ag+ doped Y2O3:Eu nanocrystals. Acta Physica Sinica,
2006, 55(5): 2623-2627.
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