应变加载下Si纳米线电输运性能的原位电子显微学研究

王疆靖; 邵瑞文; 邓青松; 郑坤

doi:10.7498/aps.63.117303

摘要

半导体纳米材料超大的弹性极限使其物理性能具有很宽的调谐范围，被认为是应变工程理想的研究材料，引起了人们广泛的关注. 本研究中，利用聚焦离子束技术从p型Si的单晶薄膜上切割出取向的单根纳米线，在透射电子显微镜中利用纳米操控系统对其加载弯曲形变，同时实时监测其电流-电压曲线的变化，研究弯曲应变对其电学性能的影响. 结果表明，随着应变的增大，纳米线输运性能明显增强，当应变接近2%时，输运性能随应变的提升接近饱和；当应变达到3%以后，输运性能有时会略微下降，这可能由塑形事件导致的. 本实验结果可能会对Si应变工程起到重要的参考意义.

关键词:

Abstract

Strain engineering in semiconductor nanostructure has been received great attention because their ultra-large elastic limit can induce a broad tuning range of the physical properties. Here, we report how the electrical transport properties of the p-type -oriented Si nanowires may be tuned by bending strain and affected by the plastic deformation in a transmission electron microscope. These freestanding nanowires were prepared from commercial silicon-on-insulator materials using the focusing ion beam technique. Results show that the conductivity of these Si nanowires is improved remarkably by bending strain when the strain is lower than 2%, while the improvement is nearly saturated when the strain approaches to 2%. The electric current will reduce a little sometimes when strain exceeds 3%, which may result from plastic events. Our experimental results may be helpful to Si strain engineering.

Keywords:

作者及机构信息

1.
北京工业大学固体微结构与性能研究所, 北京 100124

基金项目: 国家自然科学基金（批准号：11004004，11374029，11234011）、全国优秀博士学位论文作者专项资金（批准号：201214）和北京市科技新星项目（批准号：Z121103002512017）资助的课题.

Authors and contacts

1.
Institute of Microstructure and Properties of Advanced Materials, Beijing University of Technology, Beijing 100124, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 11004004, 11374029, 11234011), the Foundation for the Author of National Excellent Doctoral Dissertation of China (Grant No. 201214), and the Beijing Nova Program, China (Grant No. Z121103002512017).

参考文献

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施引文献

[1]	Zhao J, Zhang G Y, Shi D X 2013 Chin. Phys. B 22 057701
[2]	Liu Z Y, Zhang J C, Duan H T, Xue J S, Lin Z Y, Ma J C, Xue X Y, Hao Y 2011 Chin. Phys. B 20 097701
[3]	Song J J, Zhang H M, Hu H Y, Wang X Y, Wang G Y 2012 Acta Phys. Sin. 61 057304 (in Chinese)[宋建军, 张鹤鸣, 胡辉勇, 王晓艳, 王冠宇 2012 61 057304]
[4]	Rima K, Andersonb R, Boydb D, Cardonea F, Chana K, Chenb H, Christansena S, Chua J, Jenkinsa K, Kanarskyb T, Koestera S, Leeb B H, Leea K, Mazzeob V, Mocutab A, Mocutab D, Mooneya P M, Oldigesb P, Otta J, Ronsheimb P, Roya R, Steegenb A, Yanga M, Zhub H, Ieongb M, Wonga H S P 2003 Solid-State Electronics 47 1133
[5]	Wang D, Ninomiya Masaharu, Nakamae Masahiko, Nakashima Hiroshi 2005 Appl. Phys. Lett. 86 122111
[6]	Nayak D K, Woo J C S, Park J S, Wang K L, MacWilliams, K P 1993 Appl. Phys. Lett. 62 2853
[7]	Stan G, Krylyuk S, Davydov A V, Levin I, Cook R F 2012 Nano Lett. 12 2599
[8]	Smith D A, Holmberg V C, Korgel B A 2010 ACS Nano 4 2356
[9]	Wei B, Zheng K, Ji Y, Zhang Y F, Zhang Z, Han X D 2012 Nano Lett. 12 4595
[10]	Pang C Y, Lee G Y, Kim T, Kim S M, Kim H N, Ahn S H, Suh K Y 2012 Nat. Mater. 11 795
[11]	Bai X D, Golberg D Y, Bando C, Zhi Y, Tang C C, Mitome M, Kurashima K 2007 Nano Lett. 7 632
[12]	Wang Z L, Song J H 2006 Science 312 242
[13]	Han X B, Kou L Z, Lang X L, Xia J B, Wang N, Qin R, Lu J, Xu J, Liao Z M, Zhang X Z, Shan X D, Song X F, Gao J Y, Guo W L, Yu D P 2009 Adv. Mater. 21 4937
[14]	Han X B, Kou L Z, Zhang Z Y, Zhu X L, Xu J, Liao Z M, Guo W L, Yu D P 2012 Adv. Mater. 24 4707
[15]	Xu S G, Guo W H, Du S W, Loy M M T, Wang N 2012 Nano Lett. 12 5802
[16]	Signorello G, Karg S, Björk M T 2013 Nano Lett. 13 917
[17]	Shao R W, Zheng K, Zhang Y F, Li Y J, Zhang Z, Han X D 2012 Appl. Phys. Lett. 101 233109
[18]	Wang J, Rahman A, Ghosh A, Klimeck, Lundstrom G M 2005 Appl. Phys. Lett. 86 093113
[19]	Hong K, Kim J, Lee S, Shin J K 2008 Nano Lett. 8 1335
[20]	Shiri K, Kong Y, Buin A, Anantram M P 2008 Appl. Phys. Lett. 93 073114
[21]	Sajjad R N, Alam K 2009 J. Appl. Phys. 105 044307
[22]	Jin Z, Qiao L P, Guo C, Wang J A, Liu C 2013 Acta Phys. Sin. 62 058501 (in Chinese)[靳钊, 乔丽萍, 郭晨, 王江安, 刘策 2013 62 058501]
[23]	Zhang J H, Huang Q A, Yu H, Lei S Y 2009 Sensors 9 2746
[24]	Cao J X, Gong X G, Wu R Q 2007 Phys. Rev. B 75 233302
[25]	Leu P W, Svizhenko A, Cho K 2008 Phys. Rev. B 77 235305
[26]	Zhao L X, Zhang H M, Hu H Y, Dai X Y, Xuan R X 2010 Acta Phys. Sin. 59 6545 (in Chinese)[赵丽霞, 张鹤鸣, 胡辉勇, 戴显英, 宣荣喜 2010 59 6545]
[27]	Niquet Y M, Delerue C, Krzeminski C 2012 Nano Lett. 12 3545
[28]	Fishchetti M V, Laux S E 1996 J. Appl. Phys. 80 2234
[29]	Feste S F, Knoch J, Habicht S, Buca D, Zhao Q T, Mantl S 2009 Solid-state Electronics 53 1257
[30]	Toriyama T, Funai D, Sugiyama S 2003 J. Appl. Phys. 93 561
[31]	Yang Y L, Li X X 2011 Nanotech. 22 015501
[32]	Neuzil P, Wong C C, Rebound J 2010 Nano Lett. 10 1248
[33]	Lugstein A, Steinmair M, Steiger A, Kosina H, Bertagnolli E 2010 Nano Lett. 10 3204
[34]	He R H, Yang P D 2006 Nat. Nanotech. 1 42
[35]	Milne J S, Rowe A C H, Arscott S, Renner C 2010 Phys. Rev. Lett. 105 226802
[36]	Qin Y, Zhang X N, Zheng K, Li H, Han X D, Zhang Z 2008 Appl. Phys. Lett. 93 063104
[37]	Zheng K, Shao R W, Deng Q S, Zhang Y F, Li Y J, Han X D, Zhang Z, Zou J 2014 Appl. Phys. Lett. 104 013111
[38]	Svensson K, Jompol Y, Olin H, Olsson E 2003 Rev. Sci. Instrum. 74 4945
[39]	Shao R W, Zheng K, Wei B, Zhang Y F, Li Y J, Han X D, Zhang Z, Zou J 2014 Nanoscale 4 4936
[40]	Han X D, Zhang Y F, Zheng K, Zhang X N, Zhang Z, Hao Y J, Guo X Y, Yuan J, Wang Z L 2007 Nano Lett. 7 452
[41]	Han X D, Zheng K, Zhang Y F, Zhang X N, Zhang Z, Wang Z L 2007 Adv. Mater. 19 2112
[42]	Zheng K, Han X D, Wang L H, Zhang Y F, Yue Y H, Qin Y, Zhang X N, Zhang Z 2009 Nano Lett. 9 2471
[43]	Wang L H, Zheng K, Zhang Z, Han X D 2011 Nano Lett. 11 2382

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