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Lu Yi-Min, Wang Yu-Jie, Xu Man-Man, Wang Hai, Xi Lin. Micro-structural and optical properties of diamond-like carbon films grown by magnetic field-assisted laser deposition. Acta Physica Sinica,
2024, 73(10): 108101.
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Wang Da-Wei, Gu Zhi-Gang, Zhang Jian. Liquid phase epitaxial layer by layer dipping assembly of metal-organic framework thin films and their physical property. Acta Physica Sinica,
2020, 69(12): 126801.
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Jiang Mei-Yan, Zhu Zheng-Jie, Chen Cheng-Ke, Li Xiao, Hu Xiao-Jun. Microstructural and electrochemical properties of sulfur ion implanted nanocrystalline diamond films. Acta Physica Sinica,
2019, 68(14): 148101.
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Sun Nan-Nan, Shi Zhan, Ding Qi, Xu Wei-Wei, Shen Yang, Nan Ce-Wen. Software realization of physical property calculation model based on effective medium theory. Acta Physica Sinica,
2019, 68(15): 157701.
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Wang Yu-Zhen, Ma Ying, Zhou Yi-Chun. Molecular dynamics study of epitaxial compressive strain influence on the radiation resistance of BaTiO3 ferroelectrics. Acta Physica Sinica,
2014, 63(24): 246101.
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Wang Jiang-Jing, Shao Rui-Wen, Deng Qing-Song, Zheng Kun. Study on electrical transport properties of strained Si nanowires by in situ transmission electron microscope. Acta Physica Sinica,
2014, 63(11): 117303.
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Wang Rui, Hu Xiao-Jun. The microstructural and electrochemical properties of oxygen ion implanted nanocrystalline diamond films. Acta Physica Sinica,
2014, 63(14): 148102.
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Xie Jian-Feng, Cao Jue-Xian. Modulation of the band structure of layered BN film with stain. Acta Physica Sinica,
2013, 62(1): 017302.
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Gu Shan-Shan, Hu Xiao-Jun, Huang Kai. Effects of annealing temperature on the microstructure and p-type conduction of B-doped nanocrystalline diamond films. Acta Physica Sinica,
2013, 62(11): 118101.
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Yang Duo, Zhong Ning, Shang Hai-Long, Sun Shi-Yang, Li Ge-Yang. Microstructures and mechanical properties of (Ti, N)/Al nanocomposite films by magnetron sputtering. Acta Physica Sinica,
2013, 62(3): 036801.
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Hu Heng, Hu Xiao-Jun, Bai Bo-Wen, Chen Xiao-Hu. Effects of annealing time on the microstructural and electrochemical properties of B-doped nanocrystalline diamond films. Acta Physica Sinica,
2012, 61(14): 148101.
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Pan Jin-Ping, Hu Xiao-Jun, Lu Li-Ping, Yin Chi. Influence of annealing on the microstructure and electrochemical properties of B-doped nanocrystalline diamond films. Acta Physica Sinica,
2010, 59(10): 7410-7416.
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Guo Quan-Sheng, Li Han, Su Xian-Li, Tang Xin-Feng. Microstructure and themoelectric properties of p-type filled skutterudite Ce0.3Fe1.5Co2.5Sb12 prepared by melt-spinning method. Acta Physica Sinica,
2010, 59(9): 6666-6672.
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Su Xian-Li, Tang Xin-Feng, Li Han. Effects of melt spinning process on microstructure and thermoelectric properties of n-type InSb compounds. Acta Physica Sinica,
2010, 59(4): 2860-2866.
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Li Jia, Yang Chuan-Zheng, Zhang Xi-Gui, Zhang Jian, Xia Bao-Jia. XRD studies on the electrode materials in the charge-discharge process of a graphite/Li（Ni1/3Co1/3Mn1/3）O2 battery. Acta Physica Sinica,
2009, 58(9): 6573-6581.
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Yao Fei, Xue Chun-Lai, Cheng Bu-Wen, Wang Qi-Ming. Band gap Narrowing in heavily B doped Si1－xGex strained layers. Acta Physica Sinica,
2007, 56(11): 6654-6659.
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Tan Guo-Tai, Chen Zheng-Hao. XRD analysis on lattice structure of La1-xTexMnO3. Acta Physica Sinica,
2007, 56(3): 1702-1706.
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Qin Pei, Lou Yu-Wan, Yang Chuan-Zheng, Xia Bao-Jia. New computing methods and programs for separating multipe-broadening effects of X-ray diffraction lines. Acta Physica Sinica,
2006, 55(3): 1325-1335.
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Liu Xiao-Bing, Shi Xiang-Hua, Liao Tai-Chang, Ren Peng, Liu Yue, Liu Yi, Xiong Zu-Hong, Ding Xun-Min, Hou Xiao-Yuan. The microstructure and characteristics of luminescent porous silicon film prepared by the physicochemical sonic-vacating method. Acta Physica Sinica,
2005, 54(1): 416-421.
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Zhou Bing-Qing, Liu Feng-Zhen, Zhu Mei-Fang, Gu Jin-Hua, Zhou Yu-Qin, Liu Jin-Long, Dong Bao-Zhong, Li Guo-Hua, Ding Kun. The microstructure of hydrogenated microcrystalline silicon thin films studied by small-angle x-ray scattering. Acta Physica Sinica,
2005, 54(5): 2172-2175.
doi: 10.7498/aps.54.2172
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