Diagnosis of VHF plasmas with optical emission spectroscopy

Yang Hui-Dong; Wu Chun-Ya; Li Hong-Bo; Mai Yao-Hua; Zhu Feng; Zhou Zhen-Hua; Zhao Ying; Geng Xin-Hua; Xiong Shao-Zheng

doi:10.7498/aps.52.2324

Abstract
Very high frequency (VHF) Plasma and its glow discharge mechanism during the deposition of μc-Si:H film have been studied by means of optical emission spectroscopy (OES) technique in this paper.From the measured OES spectra,where the valuable information on the Si,SiH,H and H2 intensities were provided,the influence of deposition conditions on the VHF plasma has been investigated.The intensitie s of SiH,H2 and H of VHF-gas deposition(GD) to deposit μc-Si:H were much high er than those of RF-GD to deposit a-Si:H.Under the experiment condition to depos it μc-Si:H,Si,SiH,the H and H2 intensities increased obviously with the excit ation frequency,and the variation of the deposition rate with the excitation fre quency was similar to that of SiH.The SiH intensity of VHF-GD became higher than its Si intensity as the hydrogen dilution ratio decreased.The influences of the hydrogen dilution ratio on the plasma optical emission spectra also depended on the reaction pressure,the excitation power as well as the excitation frequency. In the case of the hydrogen ratio (R=H2/SiH4)R=23,the SiH intensity decrease d monotonously against the excitation pressure at a low excitation power (e.g.5W ).But the SiH intensity increased at first, then decreased with the increase of the pressure at the high excitation power (e.g.11-55W).In the case of the hydrog en ratio R=5.7,the SiH intensity decreased monotonously against the excitation p ressure for all the excitation power.The Si,SiH,H and H2 intensities also incr eased with the excitation power and then trended to be saturated,and they are ea sier to saturate with the increase of the hydrogen dilution ratio.All the experi mental results demonstrated that the influences of the excitation frequency,the excitation power,the reaction pressure and the hydrogen dilution ratio were correlative,none of the deposition conditions is the critical factor to improve the deposition rate.

Keywords:
VHF-PECVD /

Si:H thin film /

optical emission spectroscopy(OES)
Authors and contacts
Yang Hui-Dong²,

Wu Chun-Ya¹,

Li Hong-Bo¹,

Mai Yao-Hua¹,

Zhu Feng¹,

Zhou Zhen-Hua¹,

Zhao Ying¹,

Geng Xin-Hua¹,

Xiong Shao-Zheng¹

(1)南开大学光电子所，天津 300071; (2)南开大学光电子所，天津 300071;东华大学理学院，上海 200051
References

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Vol. 52, Issue 9 - 2003-05-05

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