铜沉淀对直拉硅单晶中洁净区形成的影响

王永志; 徐进; 王娜婷; 吉川; 张光超

doi:10.7498/aps.61.016105

摘要

研究普通热处理和快速热处理工艺下直拉单晶硅中过渡族金属铜杂质对洁净区生成的影响. 通过腐蚀和光学显微镜研究发现,常规高-低-高三步洁净区生成热处理样品中, 第一步高温热处理前对样品铜沾污,样品中没有洁净区生成,高密度的铜沉淀布满了样品整个截面. 而第二步、第三步热处理过程中引入铜杂质不影响洁净区的生成. 研究表明,高温热处理过程中生成的铜沉淀不能溶解是导致洁净区不能形成的最主要原因. 另外,由于不同温度下热处理,导致引入铜杂质的平衡浓度不同,会在一定程度上影响洁净区的厚度. 对于快速热处理样品,可以得到相似的结果.

关键词:

直拉单晶硅 /
铜沉淀 /
洁净区

Abstract

The influence of copper precipitation on the formation of denuded zone (DZ) in Czochralski silicon has been systematically investigated by means of optical microscopy. It was found that, for conventional furnace high-low-high annealing, the copper precipitates colonies generated along the whole crosssection in the specimens contaminated by copper impurity at the first step of the heat treatment, thus no DZ generated. While in other specimens, DZ formed. Additionally, it was found that the contamination temperature can influence significantly the thermodynamics and kinetic process of the formation of copper precipitates. The phenomena also occurred in the specimens underwent rapid thermal-low-high annealing. On the basis of the step by step investigation, it was revealed that the copper precipitates temperature and point defects type can influence the formation of DZ to a great extent.

Keywords:

作者及机构信息

1.
厦门大学材料学院, 厦门 361005;

2.
浙江大学硅材料国家重点实验室, 杭州 310027;

3.
福建省防火阻燃材料重点实验室, 厦门 361005

基金项目: 国家自然科学基金(批准号：50902116, 50832006)、福建省高等学校新世纪优秀人才支持计划, 硅材料国家重点实验室开放基金项目(批准号：SKL2009-11)和福建省重大平台建设基金(批准号：2009J1009)资助的课题.

Authors and contacts

1.
College of Materials, Xiamen University, Xiamen 361005, China;

2.
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China;

3.
Key Laboratory for Fire Retardant Materials of Fujian Province, Xiamen 361005, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 50902116, 50832006), Program for New Century Excellent Talents in Fujian Province University, the Opening Project of State Key Laboratory of Silicon Materials, China (Grant No. SKL2009-11), and the Scientific and Technological Innovation Platform of Fujian Province, China (Grant No. 2009J1009).

参考文献

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[7]	Hamet J F, Abdelaoui R, Nouet G 1990 J. Appl. Phys. 68 638
[8]	WangWY, Yang D R, Yu X G, Que D L 2008 J. Mater. Sci. :Mater. Electron. 19 32
[9]	Shimura F,Willardson R K, Beer A C,Weber E R 1994 Oxygen in Silicon, Series: Semiconductors and Semimetals (Vol. 42) (Boston, MA: Academic Press) p41
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[14]	Falster R, Gambaro D, OlmoM1998 The Fifth International Symposium High Purity Silicon V Boston, April 13–17, 1998 pp 135–146
[15]	Falster R, Voronkov V V 2000 Mater. Sci. Engineer. B 7387 94
[16]	Falster R, Pagan M, Gambaro D 1997 Proceeding of the 7th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology Belgium, October 5–7, 1997 pp129–136
[17]	Katsukama, Kuim O, Sueoka K 2002 Nucl. Instr. Meth. in Phys. Res. 186 46254
[18]	Akhmetov V, Kissinger G, von Ammon W 2009 Physica B 404 4572
[19]	Xi Z Q, Yang D R, Xu J, Ji Y J, Que D L, Moeller H J 2003 Appl. Phys. Lett. 83 3048
[20]	McHugo S A, Mohammed A, Thompson A C, Lai B, Cai Z 2002 J. Appl. Phys. 91 6396
[21]	Istratov A A, Flink C, Hieslmair H, Weber E R, Heiser T 1998 Phys. Rev. Lett. 81 1243
[22]	Weber E R 1983 Appl. Phys. A: Solids Surf. 30 1
[23]	Gay N, Martinuzzi S 1997 Appl. Phys. Lett. 70 2568
[24]	McHugo S A, Flink C 2000 Appl. Phys. Lett. 77 3598
[25]	Laczik Z 1992 Ph.D. Dissertation (Oxford County: University of Oxford)
[26]	Falster R, Voronkov V V, Quast F 2000 Phys. Status Solidi B 222 219
[27]	Xi Z Q, Yang D R, Chen J, Xu J, Ji Y J, Que D L, Moeller H J 2004 Semicond. Sci. Technol. 19 299
[28]	Shen B, Jablonski J, Sekeguchi T, Sumino K 1996 Jpn. J. Appl. Phys. 35 4187
[29]	Borghesi A, Pivac B, Sassella A, Stella A 1995 J. Appl. Phys. 77 4169
[30]	Seibt M, Graff K 1988 J. Appl. Phys. 63 4444
[31]	Kola R R, Rozgonyi G A, Li J, Rogers W B, Tan T Y, Bean K E, Lindberg K 1989 Appl. Phys. Lett. 55 2108
[32]	Xu J, Yang D R, Chu J 2004 Acta Phys. Sin. 53 550 (in Chinese) [徐进,杨德仁,储佳 2004 53 550]

施引文献

[1]	ThomPson S, Parthasarathy S 2006 Mater. Today 9 20
[2]	Liu B C, Huang T Y 2006 China Materials Engineering Dictionary (Vol. 11) (Beijing: Chemical Industry Press) p116–119 (in Chinese) [柳百成, 黄天佑 2006 中国材料工程大典( 11 卷) (北京：化学工业出版社) 第116-119页]
[3]	Bergholz W, Gilles D 2000 Phys. Stat. Sol. B 222 5
[4]	Myers S M, Seibt M, Schroeter W 2000 J. Appl. Phys. 88 3795
[5]	Istratov A A, Weber E R 1998 Appl. Phys. A 66 123
[6]	Andrei A, Istratov, Weber E R 2002 J. Electrochem. Soc. 149 G21
[7]	Hamet J F, Abdelaoui R, Nouet G 1990 J. Appl. Phys. 68 638
[8]	WangWY, Yang D R, Yu X G, Que D L 2008 J. Mater. Sci. :Mater. Electron. 19 32
[9]	Shimura F,Willardson R K, Beer A C,Weber E R 1994 Oxygen in Silicon, Series: Semiconductors and Semimetals (Vol. 42) (Boston, MA: Academic Press) p41
[10]	Xu J, Li F L, Yang D R 2007 Acta Phys. Sin. 56 4113 (in Chinese) [徐进, 李福龙, 杨德仁直拉硅单晶中原生氧沉淀的透射电镜研究 2007 56 4113]
[11]	Cui C, Ma X Y, Yang D R 2008 Acta Phys. Sin. 57 1037 (in Chinese) [崔灿, 马向阳, 杨德仁 2008 57 1037]
[12]	Xi Z Q, Chen J, Yang D R, Lawerenz A, Moeller H J 2000 J. Appl. Phys. 97 094909
[13]	Bains S K, Griffiths D P, Wilkes J G, Series R W, Barraclough K G 1990 J. Electrochem. Soc. 137 647
[14]	Falster R, Gambaro D, OlmoM1998 The Fifth International Symposium High Purity Silicon V Boston, April 13–17, 1998 pp 135–146
[15]	Falster R, Voronkov V V 2000 Mater. Sci. Engineer. B 7387 94
[16]	Falster R, Pagan M, Gambaro D 1997 Proceeding of the 7th International Autumn Meeting Gettering and Defect Engineering in Semiconductor Technology Belgium, October 5–7, 1997 pp129–136
[17]	Katsukama, Kuim O, Sueoka K 2002 Nucl. Instr. Meth. in Phys. Res. 186 46254
[18]	Akhmetov V, Kissinger G, von Ammon W 2009 Physica B 404 4572
[19]	Xi Z Q, Yang D R, Xu J, Ji Y J, Que D L, Moeller H J 2003 Appl. Phys. Lett. 83 3048
[20]	McHugo S A, Mohammed A, Thompson A C, Lai B, Cai Z 2002 J. Appl. Phys. 91 6396
[21]	Istratov A A, Flink C, Hieslmair H, Weber E R, Heiser T 1998 Phys. Rev. Lett. 81 1243
[22]	Weber E R 1983 Appl. Phys. A: Solids Surf. 30 1
[23]	Gay N, Martinuzzi S 1997 Appl. Phys. Lett. 70 2568
[24]	McHugo S A, Flink C 2000 Appl. Phys. Lett. 77 3598
[25]	Laczik Z 1992 Ph.D. Dissertation (Oxford County: University of Oxford)
[26]	Falster R, Voronkov V V, Quast F 2000 Phys. Status Solidi B 222 219
[27]	Xi Z Q, Yang D R, Chen J, Xu J, Ji Y J, Que D L, Moeller H J 2004 Semicond. Sci. Technol. 19 299
[28]	Shen B, Jablonski J, Sekeguchi T, Sumino K 1996 Jpn. J. Appl. Phys. 35 4187
[29]	Borghesi A, Pivac B, Sassella A, Stella A 1995 J. Appl. Phys. 77 4169
[30]	Seibt M, Graff K 1988 J. Appl. Phys. 63 4444
[31]	Kola R R, Rozgonyi G A, Li J, Rogers W B, Tan T Y, Bean K E, Lindberg K 1989 Appl. Phys. Lett. 55 2108
[32]	Xu J, Yang D R, Chu J 2004 Acta Phys. Sin. 53 550 (in Chinese) [徐进,杨德仁,储佳 2004 53 550]

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