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- Li Yang-Xian1,
- Liu He-Yan1,
- Niu Peng-Juan1,
- Liu Cai-Chi1,
- Xu Yue-Sheng1,
- Yang De-Ren2,
- Que Duan-Lin2
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(1)河北工业大学材料学院,天津300130; (2)浙江大学硅材料国家重点实验室,杭州310027
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[1] Peng Chao, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Ma Teng, Cai Zong-Qi, Chen Yi-Qiang. Study on characteristics of neutron-induced leakage current increase for SiC power devices. Acta Physica Sinica, 2023, 72(18): 186102. doi: 10.7498/aps.72.20230976 [2] Zhang Guo-Shuai, Yin Chao, Wang Zhao-Fan, Chen Ze, Mao Shi-Feng, Ye Min-You. Simulation of neutron irradiation-induced recrystallization of tungsten. Acta Physica Sinica, 2023, 72(16): 162801. doi: 10.7498/aps.72.20230531 [3] Wei Wen-Jing, Gao Xu-Dong, Lü Liang-Liang, Xu Nan-Nan, Li Gong-Ping. Simulation study of neutron radiation damage to cadmium zinc telluride. Acta Physica Sinica, 2022, 71(22): 226102. doi: 10.7498/aps.71.20221195 [4] Hao Rui-Jing, Guo Hong-Xia, Pan Xiao-Yu, Lü Ling, Lei Zhi-Feng, Li Bo, Zhong Xiang-Li, Ouyang Xiao-Ping, Dong Shi-Jian. Neutron-induced displacement damage effect and mechanism of AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2020, 69(20): 207301. doi: 10.7498/aps.69.20200714 [5] Zhang Yue, Zhao Jian, Dong Peng, Tian Da-Xi, Liang Xing-Bo, Ma Xiang-Yang, Yang De-Ren. Effects of dopants on the growth of oxidation-induced stacking faults in heavily doped n-type Czochralaki silicon. Acta Physica Sinica, 2015, 64(9): 096105. doi: 10.7498/aps.64.096105 [6] Zeng Jun-Zhe, Li Yu-Dong, Wen Lin, He Cheng-Fa, Guo Qi, Wang Bo, Maria, Wei Yin, Wang Hai-Jiao, Wu Da-You, Wang Fan, Zhou Hang. Effects of proton and neutron irradiation on dark signal of CCD. Acta Physica Sinica, 2015, 64(19): 194208. doi: 10.7498/aps.64.194208 [7] Gu Wen-Ping, Zhang Lin, Li Qing-Hua, Qiu Yan-Zhang, Hao Yue, Quan Si, Liu Pan-Zhi. Effect of neutron irradiation on the electrical properties of AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2014, 63(4): 047202. doi: 10.7498/aps.63.047202 [8] Xue Yuan, Gao Chao-Jun, Gu Jin-Hua, Feng Ya-Yang, Yang Shi-E, Lu Jing-Xiao, Huang Qiang, Feng Zhi-Qiang. Study on the properties and optical emission spectroscopy of the intrinsic silicon thin film in silicon heterojunction solar cells. Acta Physica Sinica, 2013, 62(19): 197301. doi: 10.7498/aps.62.197301 [9] Sun Fu-He, Zhang Xiao-Dan, Wang Guang-Hong, Xu Sheng-Zhi, Yue Qiang, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen, Zhao Ying. Influence of boron on the properties of intrinsic microcrystalline silicon thin films. Acta Physica Sinica, 2009, 58(2): 1293-1297. doi: 10.7498/aps.58.1293 [10] Cui Can, Ma Xiang-Yang, Yang De-Ren. Effect of ramping from low temperatures on oxygen precipitation in Czochralski silicon. Acta Physica Sinica, 2008, 57(2): 1037-1042. doi: 10.7498/aps.57.1037 [11] Xu Jin, Li Fu-Long, Yang De-Ren. Grown-in oxygen precipitates in czochralski silicon investigated by transmission electron microscopy. Acta Physica Sinica, 2007, 56(7): 4113-4116. doi: 10.7498/aps.56.4113 [12] Zhang Xiao-Dan, Zhao Ying, Gao Yang-Tao, Zhu Feng, Wei Chang-Chun, Sun Jian, Geng Xin-Hua, Xiong Shao-Zhen. Fabrication of intrinsic microcrystalline silicon thin films used for solar cells and its structure. Acta Physica Sinica, 2005, 54(10): 4874-4878. doi: 10.7498/aps.54.4874 [13] Li Yang-Xian, Yang Shuai, Chen Gui-Feng, Ma Qiao-Yun, Niu Ping-Ｊuan, Chen Dong-Feng, Li Hong-Tao, Wang Bao-Yi. Investigation of the acceptor and donor in fast neutron irradiated Czochralski s ilicon. Acta Physica Sinica, 2005, 54(4): 1783-1787. doi: 10.7498/aps.54.1783 [14] Yang Shuai, Li Yang-Xian, Ma Qiao-Yun, Xu Xue-Wen, Niu Ping-Juan, Li Yong-Zhang, Niu Sheng-Li, Li Hong-Tao. FTIR study an VO2 defect in fast neutron irradiated Czochralski silicon. Acta Physica Sinica, 2005, 54(5): 2256-2260. doi: 10.7498/aps.54.2256 [15] Xu Jin, Yang De-Ren, Chu Jia, Ma Xiang-Yang, Que Duan-Lin. Oxidation-induced stacking faults in nitrogen-doped czochralski silicon investigated by transmission electron microscope. Acta Physica Sinica, 2004, 53(2): 550-554. doi: 10.7498/aps.53.550 [16] Jiang Le, Yang De-Ｒen, Yu Ｘue-Ｇong, Ma Xiang-Yang, Xu Jin, Que Duan-Lin. Effect of nitrogen on oxygen precipitation in Czochralski silicon during high-te mperature annealing. Acta Physica Sinica, 2003, 52(8): 2000-2004. doi: 10.7498/aps.52.2000 [17] Feng Xi-Qi, Lin Qi-Sheng, Man Zhen-Yong, Liao Jin-Ying, Hu Guan-Qin. . Acta Physica Sinica, 2002, 51(2): 315-321. doi: 10.7498/aps.51.315 [18] LIN XU-LUN. A NEW EPR SPECTRUM IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN. Acta Physica Sinica, 1986, 35(6): 716-724. doi: 10.7498/aps.35.716 [19] ZHANG YU-FENG, DU YONG-CHANG, WENG SHI-FU, MENG XIANG-TI, ZHANG BING-ZHONG. INFRARED ABSORPTION OF NEUTRON-IRRADIATED FZ-Si GROWN IN HYDROGEN ATMOSPHERE. Acta Physica Sinica, 1985, 34(7): 849-859. doi: 10.7498/aps.34.849 [20] DU YONG-CHANG, ZHANG YU-FENG, QIN GUO-GANG, MENG XIANG-TI. DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN. Acta Physica Sinica, 1984, 33(4): 477-485. doi: 10.7498/aps.33.477
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- Abstract views: 7717
- PDF Downloads: 842
- Cited By: 0
Publishing process
- Received Date:
14 May 2002
- Accepted Date:
10 June 2002
- Published Online:
05 May 2002
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