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Zn1-xMgxO films have been deposited on Al2O3(0001) substrates at different oxygen pressures by using pulsed laser deposition method. The influence of oxygen pressure on the crystal quality and optical properties of the films is studied with X-ray diffraction (XRD), transmittance spectra, and photoluminescence (PL). It is found that the crystal quality of the films lowers with increasing of oxygen pressure from 10-4Pa to 10 Pa. At the pressure of 10-4 Pa, the epitaxial relationship between the film and sapphire substrate is determined to be ZnMgO (0001)// Al2O3(0001),ZnMgO 1010]//Al2O3 1120]. In the oxygen rich environment, however, another epitaxial relationship, ZnMgO (0001)//Al2O3(0001) and ZnMgO 1010]//Al2O3 1010], is also present in the films, which is suggested to be responsible for the decline of the crystal quality. Compared with pure ZnO films, the UV peak of Zn1-xMgxO alloys shows red-shift from 3.374 to 3.332 eV with increasing oxygen working pressure increasing from 10-4 Pa up to 10 Pa. The difference in red-shifts can be attributed to the decrease of Mg content in the films resulting from the variation of oxygen pressure. A broad UV PL spectrum was observed at 10 K in the films deposited under different pressures and can be decomposed into two recombination processes of excitons, corresponding to the bound and the localized exciton luminescence, respectively. The binding energy of bound excitons in the ZnMgO films is larger than that in pure ZnO and has an increasing trend with increasing oxygen pressure.
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Keywords:
- ZnO /
- Mg doped /
- pulsed laser deposition /
- thin film growth /
- optical property
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[17] Sun C W, Liu Z W, Qin F W, Zhang Q Y, Liu K, Wu S F 2006 Acta Phys. Sin. 55 1390(in Chinese) [孙成伟、 刘志文、 秦福文、 张庆瑜、 刘 琨、 吴世法 2006 55 1390]
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[1] Ohtomo A, Kawasaki M, Koida T, Koimama H, Masubuchi K, Sakurai Y, Yoshida Y, Yasuda T, Segawa Y 1998 Appl. Phys. Lett. 72 2466
[2] Sharma A K, Narayan J, Muth J F, Teng C W, Lin C, Kvit A, Kolbas R M, Holland O W 1999 Appl. Phys. Lett. 75 3327
[3] Sun C W, Liu Z W, Zhang Q Y 2006 Acta Phys. Sin. 55 430 (in Chinese) [孙成伟、 刘志文、 张庆瑜 2006 55 430]
[4] Gao L, Zhang J M2010 Acta Phys. Sin. 59 1263 (in Chinese) [高 立、 张建民 2010 59 1263]
[5] Zhang X T, Xiao Z Y, Zhang W L, Gao H, Wang Y X, Liu Y C, Zhang J Y, Xu W 2003 Acta Phys. Sin. 52 740(in Chinese) [张喜田、 肖芝燕、 张伟力、 高 红、 王玉玺、 刘益春、 张吉英、 许 武 2003 52 740]
[6] Yuan Y H, H X, Gao H 2006 Acta Phys. Sin. 55 446(in Chinese) [袁艳红、 侯 洵、高 恒 2006 55 446]
[7] Liu H X, Zhou S M, Li S Z, Hang Y, Xu J, Gu S L, Zhang R 2006 Acta Phys. Sin. 55 1398 (in Chinese) [刘红霞、 周圣明、 李抒智、 杭 寅、 徐 军、 顾书林、 张 荣 2006 55 1398]
[8] Service R F 1997 Science 276 895
[9] Tian Z R, Voigt T A, Liu J 2003 Nature Materials 2 821
[10] Jin X L, Lou S Y, Kong D G, Li Y C, Du Z L2006 Acta Phys. Sin. 55 4809 (in Chinese) [靳锡联、 娄世云、 孔德国、 李蕴才、 杜祖亮 2006 55 4809]
[11] Tampo H, Shibata H, Maejima K, Yamada A, Matsubara K, Fons P, Niki S, Tainaka T, Chiba Y, Kanie H 2007 Appl. Phys. Lett. 91 261907
[12] Schmidt R, Rheinlander B, Schubert M, Spemann D, Butz T, Lenzner J, Kaidashev E M, Lorenz M, Rahm A, Semmelhack H C, Grundmann M 2003 Appl. Phys. Lett. 82 2260
[13] Ip K, Heo Y W, Norton D P, Pearton S J, LaRoche J R, Ren F 2004 Appl. Phys. Lett. 85 1169
[14] Muller A, Stolzel M, Dietrich C, Benndorf G, Lorenz M, GrundmannM 2010 J. Appl. Phys. 107 013704
[15] Yoshikawa A, Wang X Q, Iwaki H, Murakami M, Du X L, Ishitani Y2003 Jpn. J. Appl. Phys. 42 L99
[16] Liu Z W, Gu J F, Fu W J, Sun C W, Li Y, Zhang Q Y2006 Acta Phys. Sin. 55 5479 (in Chinese) [刘志文、 谷建峰、 付伟佳、 孙成伟、 李 勇、 张庆瑜 2006 55 5479]
[17] Sun C W, Liu Z W, Qin F W, Zhang Q Y, Liu K, Wu S F 2006 Acta Phys. Sin. 55 1390(in Chinese) [孙成伟、 刘志文、 秦福文、 张庆瑜、 刘 琨、 吴世法 2006 55 1390]
[18] McCluskey M D, Jokela S J 2009 J. Appl. Phys. 106 071101
[19] Janoti A, Van de Walle C G 2007 Phys. Rev. B 76 165202
[20] Kubota M, Omuma T, Tsukazaki A, Ohtomo A, Kawasaki M, Sota T, Chichibu S F 2007 Appl. Phys. Lett. 90 141903
[21] Yoo J, Hong Y J, Yi G, Chon B, Joo T 2008 Semicond. Sci. Technol. 23 095015
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