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He Xin-Bo, Wei Bing. Explicit and unconditionally stable finite-difference time-domain subgridding algorithm based on hanging variables. Acta Physica Sinica,
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Feng Qiu-Ju, Pan De-Zhu, Xing Yan, Shi Xiao-Chi, Yang Yu-Qi, Li Fang, Li Tong-Tong, Guo Hui-Ying, Liang Hong-Wei. Growth, structural and optical properties of orderly SnO2 microhemispheres on patterned sapphire substrates. Acta Physica Sinica,
2017, 66(3): 038101.
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Ren Rui-Min, Yin Ya-Ling, Wang Zhi-Zhang, Guo Chao-Xiu, Yin Jian-Ping. Theoretical research on the generation of a submicron localized hollow beam and its applications in the trapping and cooling of a single atom. Acta Physica Sinica,
2016, 65(11): 114101.
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Bao Li-Hong, Chao Lu-Meng, Wei Wei, O. Tegus. Synthesis and optical absorption properties of LaxCe1-xB6 submicron powders. Acta Physica Sinica,
2015, 64(9): 096104.
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Jiang Ling, Zhang Chang-Neng, Ding Yong, Mo Li-E, Huang Yang, Hu Lin-Hua, Dai Song-Yuan. Characteristics of charge transport in nano-sized TiO2 particles/submicron spheres multilayer thin-film electrode. Acta Physica Sinica,
2015, 64(1): 017301.
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Wang Xin, Lu Wu, Wu Xue, Ma Wu-Ying, Cui Jiang-Wei, Liu Mo-Han, Jiang Ke. Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor. Acta Physica Sinica,
2014, 63(22): 226101.
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Wu Xiao-Peng, Yang Yin-Tang, Gao Hai-Xia, Dong Gang, Chai Chang-Chun. A compact model of substrate resistance for deep sub-micron gate grounded NMOS electrostatic discharge protection device. Acta Physica Sinica,
2013, 62(4): 047203.
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Song Kun, Chai Chang-Chun, Yang Yin-Tang, Jia Hu-Jun, Chen Bin, Ma Zhen-Yang. Effects of the improved hetero-material-gate approach on sub-micron silicon carbide metal-semiconductor field-effect transistor. Acta Physica Sinica,
2012, 61(17): 177201.
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Yuan Xue-Song, Yan Yang, Liu Sheng-Gang. Study on the dispersion relations of a relativistic annular electron beam guided by a finite axial magnetic field. Acta Physica Sinica,
2011, 60(1): 014102.
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Bi Jin-Shun, Hai Chao-He, Han Zheng-Sheng. Study on power characteristics of deep sub-micron SOI RF LDMOS. Acta Physica Sinica,
2011, 60(1): 018501.
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Wang Si-Hao, Lu Qing, Wang Wen-Hua, An Xia, Huang Ru. The improvement on total ionizing dose (TID) effects of the ultra-deep submicron MOSFET featuring delta doping profiles. Acta Physica Sinica,
2010, 59(3): 1970-1976.
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2008, 57(3): 1924-1929.
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Wang Xiao-Dong, Dong Peng, Chen Sheng-Li, Yi Gui-Yun. The mechanism of self-assembly of polystyrene submicrospheres at water-air interface. Acta Physica Sinica,
2007, 56(3): 1831-1836.
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2007, 56(5): 3017-3021.
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Li Zhong-He, Liu Hong-Xia, Hao Yue. Mechanism of NBTI degradation in ultra deep submicron PMOSFET’s. Acta Physica Sinica,
2006, 55(2): 820-824.
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2006, 55(5): 2508-2512.
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2006, 55(11): 5855-5858.
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1987, 36(12): 1630-1634.
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